Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Capacitance-Voltage Characteristics of Carbon Nitride Films for Humidity Sensors According to Deposition Condition

제조 조건에 따른 습도센서용 질화탄소막의 정전용량-전압 특성

  • Kim, Sung-Yub (Department of Electronic Engineering, Kyungnam University) ;
  • Lee, Ji-Gong (Department of Electronic Engineering, Kyungnam University) ;
  • Lee, Sung-Pil (Department of Electronic Engineering, Kyungnam University)
  • Published : 2006.05.19
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Abstract

Carbon nitride ($CN_X$) films were prepared by reactive RF magnetron sputtering system at various deposition conditions and the C-V characteristics of MIS(metal - insulator - semiconductor) capacitors that have the structures of Al/$CN_x$/p-Si/Al and Al/$CN_x$/$Si_3N_4$/p-Si/Al were investigated. The resistivity of carbon nitride was above $2.40{\times}10^8{\Omega}{\cdot}cm$ at room temperature. The C-V plot showed a typical capacitance-voltage characteristics of semiconductor insulating layers, while it showed hysterisis due to interface charges. Amorphous carbon nitride (a-$CN_x$) films, that have relatively high resistivity and low dielectric constant could be useful as interlayer insulator materials of VLSI(very large-scale integration) and ULSI(ultra large-scale integration).

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