• 마이크로전자및패키징학회지
• /
• 제30권4호
• /
• pp.8-16
• /
• 2023

디바이스 소형화의 한계에 다다르면서, 이를 극복할 수 있는 방안으로 차세대 패키징 기술의 중요성이 부각되고 있다. 병목 현상을 해결하기 위해 2.5D 및 3D 인터커넥트 피치의 필요성이 커지고 있는데, 이는 신호 지연을 최소화 할 수 있도록 크기가 작고, 전력 소모가 적으며, 많은 I/O를 가져야 하는 등의 요구 사항을 충족해야 한다. 기존 솔더 범프의 경우 미세화 한계와 고온 공정에서 녹는 등의 신뢰성 문제가 있어, 하이브리드 본딩 기술이 대안책으로 주목받고 있으며 최근 Cu/SiO₂ 구조의 문제점을 개선하고자 SiCN에 대한 연구 또한 활발히 진행되고 있다. 해당 논문에서는 Cu/SiO₂ 구조 대비 Cu/SiCN이 가지는 이점을 전구체, 증착 온도 및 기판 온도, 증착 방식, 그리고 사용 가스 등 다양한 증착 조건에 따른 SiCN 필름의 특성 변화 관점에서 소개한다. 또한, SiCN-SiCN 본딩의 핵심 메커니즘인 Dangling bond와 OH 그룹의 작용, 그리고 플라즈마 표면 처리 효과에 대해 설명함으로써 SiO₂와의 차이점에 대해 기술한다. 이를 통해, 궁극적으로 Cu/SiCN 하이브리드 본딩 구조 적용 시 얻을 수 있는 이점에 대해 제시하고자 한다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.216-216
• /
• 2009

This paper describes a novel processing technique for the fabrication of polymer-derived SiCN (silicone carbonitride) microstructures for extreme microelectromechanical system (MEMS) applications. A polydimethylsiloxane (PDMS) mold was formed on an SU-8 pattern using a standard UV photolithographic process. Next, the liquid precursor, polysilazane, was injected into the PDMS mold to fabricate free-standing SiCN microstructures. Finally, the solid polymer SiCN microstructure was cross-linked using hot isostatic pressure at $400^{\circ}C$ and 205 bar. The optimal pyrolysis and annealing conditions to form a ceramic microstructure capable of withstanding temperatures over $1400^{\circ}C$ were determined. Using the optimal process conditions, the fabricated SiCN ceramic microstructure possessed excellent characteristics includingshear strength (15.2 N), insulation resistance ($2.163{\times}10^{14}\;{\Omega}$, and BDV (1.2 kV, minimum). Since the fabricated ceramic SiCN microstructure has improved electrical and physical characteristics compared to bulk Si wafers, it may be applied to harsh environments and high-power MEMS applications such as heat exchangers and combustion chambers.

• 센서학회지
• /
• 제15권2호
• /
• pp.148-152
• /
• 2006

This paper describes the fabrication of SiCN microstructures for super-high temperature MEMS using photopolymerization of pre-ceramic polymer. In this work, polysilazane liquide as a precursor was deposited on Si wafers by spin coating, microstructured and solidificated by UV lithography, and removed from the substrate. The resulting solid polymer microstructures were cross-linked under HIP process and pyrolyzed to form a ceramic of withstanding over $1400^{\circ}C$. Finally, the fabricated SiCN microstructures were annealed at $1400^{\circ}C$ in a nitrogen atmosphere. Mechanical characteristics of the SiCN microstructure with different fabrication process conditions were evaluated. The elastic modules, hardness and tensile strength of the SiC microstructure implemented under optimum process condtions are 94.5 GPa, 10.5 GPa and 11.7 N/min, respectively. Consequently, the SiCN microstructure proposed in this work is very suitable for super-high temperature MEMS application due to very simple fabrication process and the potential possiblity of sophisticated mulitlayer or 3D microstructures as well as its good mechanical properties.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.392-393
• /
• 2006

This paper describes the fabrication of SiCN microstructures for super-high temperature MEMS using photopolymerization of pre-ceramic polymer. In this work. polysilazane liquide as a precursor was deposited on Si wafers by spin coating. microstructured and solidificated by UV lithography. and removed from the substrate. The resulting solid polymer microstructures were cross-linked under HIP process and pyrolyzed to form a ceramic of withstanding over $1400^{\circ}C$. Finally, the fabricated SiCN microstructures were annealed at $1400^{\circ}C$ in a nitrogen atmosphere. Mechanical characteristics of the SiCN microstructure with different fabrication process conditions were evaluated. The elastic modules. hardness and tensile strength of the SiC microstructure implemented under optimum process conditions are 94.5 GPa, 10.5 GPa and 11.7 N/min, respectively. Consequently, the SiCN microstructure proposed in this work is very suitable for super-high temperature MEMS application due to very simple fabrication process and the potential possiblity of sophisticated multlayer or 3D microstructures as well as its good mechanical properties.

• 센서학회지
• /
• 제15권1호
• /
• pp.53-57
• /
• 2006

This paper describes a novel processing technique for fabrication of polymer-derived SiCN (silicone carbonitride) microstructures for super-temperature MEMS applications. PDMS (polydimethylsiloxane) mold is fabricated on SU-8 photoresist using standard UV photolithographic process. Liquid precursor is injected into the PDMS mold. Finally, solid polymer structure is cross-linked using HIP (hot isostatic pressure) at $400^{\circ}C$, 205 bar. Optimum pyrolysis and annealing conditions are determined to form a ceramic microstructure capable of withstanding over $1400^{\circ}C$. The fabricated SiCN ceramic microstructure has excellent characteristics, such as shear strength (15.2 N), insulation resistance ($2.163{\times}10^{14}{\Omega}$) and BDV (min. 1.2 kV) under optimum process condition. These fabricated SiCN ceramic microstructures have greater electric and physical characteristics than bulk Si wafer. The fabricated SiCN microstructures would be applied for supertemperature MEMS applications such as heat exchanger and combustion chamber.

• ETRI Journal
• /
• 제26권3호
• /
• pp.257-261
• /
• 2004

We grew amorphous SiCN films by pulsed laser deposition using mixed targets. The targets were fabricated by compacting a mixture of SiC and $SiC-{Si_3}{N_4}$ powders. We controlled the film stoichiometry by varying the mixing ratio of the target and the target-to-substrate distance. The mixing ratio of the target had a dominant effect on the film composition. We consider the structures of the SiCN films deposited using 30~70 wt.% SiC in the target to be an intermediate phase of SiC and $SiN_x$. This provides the possibility of growing homogeneous SiCN films with a mixed target at a moderate target-to-substrate distance.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
• /
• pp.125-128
• /
• 2004

In this paper, a novel processing technique for fabrication of high-temperature MEMS based on polymer-derived SiCN microstructures is described. PDMS molds are fabricated on SU-8 photoresist using standard UV-photolithographic processes. Liquid precursors are injected into the PDMS mold. And then, the resulting solid polymer structures are crosslinked under isostatic pressure, and pyrolyzed to form a ceramic capable of withstanding over $1500^{\circ}C$. These fabricated SiCN structures would be applied for high-temperature applications, such as heat exchanger and combustion chamber.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
• /
• pp.376-379
• /
• 2003

In this paper, a novel processing technique for fabrication of high-temperature MEMS based on polymer-derived SiCN microstructures is described. PDMS molds are fabricated on SU-8 photoresist using standard UV-photolithographic processes. Liquid precursors are injected into the PDMS mold. And then, the resulting solid polymer structures are crosslinked under isostatic pressure, and pyrolyzed to form a ceramic capable of withstanding over $1500^{\circ}C$. These fabricated SiCN structures would be applied for high-temperature applications, such as heat exchanger and combustion chamber.

• Composites Research
• /
• 제33권6호
• /
• pp.395-400
• /
• 2020

본 연구에서는 카본나노튜브(CNT) 면상발열체에 preceramic polymer 중 하나인 실세스퀴아잔을 코팅하여 고온에서 안정적인 발열이 가능한 CNT/SiCN 복합체 시트를 제조하였다. 제조된 복합체 필름은 FE-SEM을 통해 실세스퀴아잔이 CNT 면상발열체의 표면을 모두 코팅한 것을 확인하였다. 또한 800℃의 열처리를 통해 실세 스퀴아잔이 SiCN 세라믹으로 전환되어도 표면의 결함이 발견되지 않고 온전한 구조를 유지하는 것을 확인하였다. CNT/SiCN 복합체 시트는 질소와 공기 분위기 모두에서 기존의 CNT 시트보다도 높은 열적 안정성을 확보할 수 있었다. 마지막으로 제조된 CNT/SiCN 복합체 필름은 대기 중에서 700℃ 이상의 온도로 발열이 가능하였고 발열 후 온도를 식히고 재발열 또한 성공적으로 이루어졌다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
• /
• pp.160-160
• /
• 2005