ETRI Journal

  • 제26권3호
  • /
  • Pages.257-261
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  • 2004
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  • 1225-6463(pISSN)
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  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
권호 표지

Amorphous Silicon Carbon Nitride Films Grown by the Pulsed Laser Deposition of a SiC-$Si_3N_4$ Mixed Target

  • 투고 : 2003.05.02
  • 발행 : 2004.06.30
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초록

We grew amorphous SiCN films by pulsed laser deposition using mixed targets. The targets were fabricated by compacting a mixture of SiC and $SiC-{Si_3}{N_4}$ powders. We controlled the film stoichiometry by varying the mixing ratio of the target and the target-to-substrate distance. The mixing ratio of the target had a dominant effect on the film composition. We consider the structures of the SiCN films deposited using 30~70 wt.% SiC in the target to be an intermediate phase of SiC and $SiN_x$. This provides the possibility of growing homogeneous SiCN films with a mixed target at a moderate target-to-substrate distance.

키워드

참고문헌

  1. J. Appl. Phys. v.81 no.9 Structural Characterization of Amorphous $SiC_{x}N_{y}$ Chemical Vapor Deposited Coatings Bendeddouche, A.;Berjoan, R.;Beche, E.;Merle-Mejean, T.;Schamm, S.;Serin, V.;Taillades, G.;Pradel, A.;Hillel, R.
  2. Appl. Phys. Lett. v.69 no.6 SiCN Alloys Deposited by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition Gomez, F.J.;Prieto, P.;Elizalde, E.;Piqueras, J.
  3. J. Mater. Sci. v.16 Preparation of Amorphous $Si_3N_4-C$ Plate by Chemical Vapour Deposition Hirai, T.;Goto, T.
  4. Thin Solid Films v.348 Influence of Deposition Condition and Hydrogen on Amorphous-to-Polycrystalline SiCN Films Gong, Z.;Wang, E.G.;Xu, G.C.;Chen, Y.
  5. Thin Solid Films v.355-356 Deposition of Silicon Carbon Nitride Films by Ion Beam Sputtering Wu, J.J.;Wu, C.T.;Liao, Y.C.;Lu, T.R.;Chen, L.C.;Chen, K.H.;Hwa, L.G.;Kuo, C.T.;Ling, K.J.
  6. Appl. Surf. Sci. v.185 SiCN Thin Film Prepared at Room Temperature by r. f. Reactive Sputtering Wu, X.C.;Cai, R.Q.;Yan, P.X.;Liu, W.M.;Tian, J.
  7. J. Appl. Phys. v.76 no.5 Low-Temperature Synthesis of Silicon Oxide, Oxynitride, and Nitride Films by Pulsed Excimer Laser Ablation Fogarassy, E.;Fuchs, C.;Slaoui, A.;de Unamuno, S.;Stoquert, J.P.;Marine, W.;Lang, B.
  8. Int. J. Mass Spectrom. v.176 Laser Induced Vaporization Mass Spectrometric Studies on $Si_3N_4$ Joseph, M.;Sivakumar, N.;Manoravi, P.
  9. Appl. Surf. Sci. v.96-98 Excimer Laser-Induced Hydrodynamical Effects and Surface Modifications on Silicon Carbide Nicolas, G.;Autric, M.
  10. Appl. Surf. Sci. v.133 High-Temperature Oxidation of Sintered Silicon Carbide under Pure $CO_2$ at Low Pressure: Active-Passive Transition Balat, M.;Berjoan, R.;Pichelin, G.;Rochman, D.
  11. Diam. Relat. Mater. v.11 XPS Studies on Silicon Carbonitride Films Prepared by Sequential Implantation of Nitrogen and Carbon into Silicon Deng, Z.W.;Sonda, R.
  12. Diam. Relat. Mater. v.10 XPS Studies of Amorphous SiCN Thin Films Prepared by Nitrogen Ion-Assisted Pulsed-Laser Deposition of SiC Target Yamamoto, K.;Koga, Y.;Fujiwara, S.
  13. Vacuum v.65 Characterization of Silicon Films Deposited in Presence of Nitrogen Plasma Patil, S.J.;Bodas, D.S.;Ethiraj, A.S.;Purandare, R.C.;Phatak, G.J.;Kulkami, S.K.;Gangal, S.A.
  14. J. Appl. Phys. v.89 no.1 Behavior of Oxygen Doped SiC Thin Films: An X-Ray Photoelectron Spectroscopy Study Avila, A.;Montero, I.;Galan, L.;Ripalda, J.M.;Levy, R.
  15. Thin Solid Films v.381 The Role of Oxidation on Porous Silicon Photoluminescence and Its Excitation Torchinskaya, T.V.;Korsunskaya, N.E.;Khomenkova, L.Y.;Dhumaev, B.R.;Prokes, S.M.