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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Amorphous Silicon Carbon Nitride Films Grown by the Pulsed Laser Deposition of a SiC-$Si_3N_4$ Mixed Target

  • Received : 2003.05.02
  • Published : 2004.06.30
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Abstract

We grew amorphous SiCN films by pulsed laser deposition using mixed targets. The targets were fabricated by compacting a mixture of SiC and $SiC-{Si_3}{N_4}$ powders. We controlled the film stoichiometry by varying the mixing ratio of the target and the target-to-substrate distance. The mixing ratio of the target had a dominant effect on the film composition. We consider the structures of the SiCN films deposited using 30~70 wt.% SiC in the target to be an intermediate phase of SiC and $SiN_x$. This provides the possibility of growing homogeneous SiCN films with a mixed target at a moderate target-to-substrate distance.

Keywords

References

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