• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.17-23
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• 2018

Recently, electric semiconductors became an issue because of efficient use of energy and compaction of electronics. Silicon electric semiconductors are difficult to put into it because of its physical limitations. Hence, the study of WBG (Wideband Gap) semiconductors like SiC and GaN began. These devices received attention because it can be miniaturized and worked at high temperatures over $300^{\circ}C$. WBG MOSFET electric semiconductors can show performance like silicon IGBT. This can solve the current problem of IGBT tail. The current study shows the technical principles and issues related to SiC and GaN power semiconductors. WBG devices can achieve high performance compared to silicon, but its performance can't be fully utilized because of lack in bonding technology. Therefore, this review introduces research on WBG devices and their packaging issues.

• Proceedings of the Korea Crystallographic Association Conference
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• 2007.11a
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• pp.42-42
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• 2007

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.229-232
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• 2001

4H-SIC(silicon carbide) MESFET large signal model was studied using modified Materka-Kacprzak large signal MESFET model. 4H-SiC MESFET device simulation have been conducted by Silvaco's 2D device simulator, ATLAS. The result is modeled using modified Materka large signal model. simulation and modeling results are -8V pinch off voltage, under $V_{GS=0V}$, $V_{DS=25V}$ conditions, $I_{DSS=270㎃}$mm, $G_{m=45㎳}$mm were obtained. Through the power simulation 2GHz, at the bias of $V_{GS=-4V}$ and $V_{DS=25V}$, 10dB Gain, 34dBm(1dB compression point)output power, 7.6W/mm power density, 37% PAE(power added efficiency) were obtained.d.d.d.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.854-859
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• 2016

Recently, GeSn is drawing great deal of interests as one of the candidates for group-IV-driven optical interconnect for integration with the Si complementary metal-oxide-semiconductor (CMOS) owing to its pseudo-direct band structure and high electron and hole mobilities. However, the large lattice mismatch between GeSn and Si as well as the Sn segregation have been considered to be issues in preparing GeSn on Si. In this work, we deposit the GeSn films on Si by DC magnetron sputtering at a low temperature of $250^{\circ}C$ and characterize the thin films. To reduce the stresses by GeSn onto Si, Ge buffer deposited under different processing conditions were inserted between Si and GeSn. As the result, polycrystalline GeSn domains with Sn atomic fraction of 6.51% on Si were successfully obtained and it has been demonstrated that the Ge buffer layer deposited at a higher sputtering power can relax the stress induced by the large lattice mismatch between Si substrate and GeSn thin films.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.2
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• pp.109-117
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• 2017

This paper describes the design and implementation of a unit module for a 10 kVA class 13.2 kV/220 V unidirectional solid-state transformer (SST) with silicon-carbide metal-oxide-semiconductor field-effect transistors. The proposed module consists of an active-front-end (AFE) converter to interface 1320 V AC voltage source to 2500 V DC link and an isolated resonant DC-DC converter for 500 V low-voltage DC output. The design approaches of the AFE and the isolated resonant DC-DC converters are addressed. The control structures of the converters are described as well. The experiments for the converters are performed, and results verify that the proposed unit module can be successfully adopted for the entire SST operation.

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.6
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• pp.496-502
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• 2020

The reliability of a solid-state transformer (SST) is one of the important aspects to consider when replacing a conventional low-frequency passive transformer with SST for urban railway vehicles. Lifetime evaluation of SST in the design phase is therefore essential in guaranteeing a certain SST reliability. In this study, a lifetime evaluation of power semiconductor devices in SST is performed with respect to temperature stress. For a case study, a 3 MW SST with three kinds of power modules (one IGBT module and two SiC-MOSFET modules) is used for the lifetime estimation under the operation profile of urban railway vehicles.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2004.05a
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• pp.174-178
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• 2004

본 논문에서는 P-type (100)Si 기판위에 RF magnetron sputtering법으로 완충층용 MgO 박막을 $500\AA$ 증착한 후 제작된 MgO/Si 기판위에 BST 박막을 증착하였다. 증착 시 기판온도는 $400^{\circ}C$ 작업가스 $AR:O_2:=80:20$, 작업진공 10mtorr에서 RF 파워를 25W, 50W, 75W로 변화하면서 증착하여 최적의 RF 파워조건을 확립하였다. XRD 측정결과 25W에서 증착된 BST 박막은 배향성이 보이지 않는 비정질 형태로 성장되었고 50W에서 증착된 박막의 결정특성이 가장 양호하였다. I-V측정결과 모든 샘플에서 $\pm150KV/cm$에서 $10^{-7}A/\textrm{cm}^2$이하의 양호한 누설전류특성을 나타내었고 C-V측정 결과 역시 50W에서 증착된 BST 박막의 비유전율이 약 305로서 가장 우수한 특성을 보여주었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.51-51
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• 2009

In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340V breakdown voltage. The channel thickness was 3um and the channel doping concentration is 1e17cm-3. And we carried out thermal characteristics, too.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1018-1022
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• 2009

In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340 V breakdown voltage. The channel thickness was 3 urn and the channel doping concentration is $1e17\;cm^{-3}$. And we carried out thermal characteristics, too.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.532-536
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• 2011

The silicon nitride films were prepared by chemical vapor deposition using inductively coupled plasma. During the deposition, the substrate was heated at $150^{\circ}C$ and power 1,000 W. To evolution low temperature manufacture, we have studied the role of source gases, $SiH_4$, $NH_3$, $N_2$, and $H_2$, to produce Si-N and N-H bond in a-SiNx:H film growth. $SiH_4$, $NH_3$, and $N_2$ flow rate fixed at 100, 10, and 10 sccm, $H_2$ flow rate varied from 0 to 10 sccm by small scale. To get the electrical characteristics, we makes MIM structure, and analysis surface bonding state. Experimental data show that Si-N and N-H bond is increased and hence electrical characteristics is showed 3 MV/cm breakdown-voltage, and leakage-current $10^{-7}\;A/cm^2$.