Fig. 1. Structure of power devices.1)
Fig. 2. Market of power semiconductor.3)
Fig. 3. Comparison of Si, SiC and GaN.4)
Fig. 4. Comparison of power loss.18)
Fig. 5. Comparison of ROHM inverter and existing inverter.19)
Fig. 6. SEM images of sintered Ag joint using Ag particle paste.23)
References
- J. Millan, P. Godignon, X. Perpina, A. Perez-Tomas, and J. Rebollo, "A Survey of Wide Bandgap Power Semiconductor Devices", IEEE Trans. Power Electron., 29, 2155 (2014). https://doi.org/10.1109/TPEL.2013.2268900
- A. Agarwal, "Advances in SiC MOSFET Performance", ECPE SiC & GaN Forum Potential of Wide Band Gap Semiconductors in Power Electronic Applications, Birmingham, (2011).
- A. Sharma, S. J. Lee, Y. J. Jang, and J. P. Jung, "SiC based Technology for High Power Electronics and Packaging Applications", J. Microelectron. Packag. Soc., 21(2), 71 (2014). https://doi.org/10.6117/kmeps.2014.21.2.071
- S. C. Ko, W. J. Chang, D. Y. Jung, Y. R. Park, C. H. Jun, and E. S. Nam, "Trends in Wide Band-gap Semiconductor Power Devices for Automotive, Power Conversion Modules and ETRI GaN Power Technology", Electronics and Telecommunications Trends., 29, 53 (2014).
- R. S. Pengelly, S. M. Wood, J. W. Milligan, S. T. Sheppard, and W. L. Pribble, "A Review of GaN on SiC High Electron Mobility Power Transistors and MMICs", IEEE Trans. Microwave Theory and Techniques., 60(6), 1764 (2012). https://doi.org/10.1109/TMTT.2012.2187535
- V. Kulikovsky, V. Vorliček, P. Bohač, M. Stranyanek, R. Ctvrtlik, A. Kurdyumov, and L. Jastrabik, "Hardness and elastic modulus of amorphous and nanocrystalline SiC and Si films", Surf. Coat. Technol., 202, 1738 (2008). https://doi.org/10.1016/j.surfcoat.2007.07.029
-
S. Ulrich, T. Theel, J. Schwan, V. Batori, M. Scheib, and H. Ehrhardt, "Low-temperature formation of
${\beta}$ -silicon carbide", Diam. Relat. Mater., 6, 645 (1997). https://doi.org/10.1016/S0925-9635(96)00717-0 - J. A. Thornton, "Influence of substrate temperature and deposition rate on structure of thick sputtered Cu coatings", J. Vac. Sci. Technol., 12, 830 (1975). https://doi.org/10.1116/1.568682
-
T. Kimoto, Y. Kanzaki, M. Noborio, H. Kawano, and H. Matsunami, "Interface Properties of Metal-oxide Semiconductor Structures on 4H-SiC {0001} and (1120) Formed by
$N_2O$ Oxidation", JJAP, 44(3), 1213 (2005). - M. Furuhashi, T. Tanioka, M. Imaizumi, N. Miura, and S. Yamakawa, "Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET", Materials Science Forum, 778-780, 985 (2014). https://doi.org/10.4028/www.scientific.net/MSF.778-780.985
- M. Roschke, and F. Schwierz, "Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]", IEEE. Trans. Electron. Devices., 48(7), 1442 (2001). https://doi.org/10.1109/16.930664
- A. Itoh, T. Kimoto, and H. Matsunami, "High performance of high-voltage 4H-SiC Schottky barrier diodes", IEEE. Electron. Device. Lett., 16(6), 280 (1995). https://doi.org/10.1109/55.790735
- M. Bhatnagar, and B. J. Baliga, "Comparison of 6H-SiC, 3CSiC, and Si for power devices", IEEE. Trans. Electron. Devices., 40(3), 645 (1993). https://doi.org/10.1109/16.199372
- T. Hayashi, H. Tanaka, Y. Shimoida, S. Tanimoto, and M. Hoshi, "New High-voltage Unipolar Mode p+ Si/n- 4H-SiC Heterojunction Diode," Mater. Sci. Forum, 953, 483 (2005).
- W. M. Choi, and H. G. Ahn, "The Switching Characteristic and Efficiency of New Generation SiC MOSFET", J. Korea Inst. Inf. Commun. Eng., 21(2), 353 (2017). https://doi.org/10.6109/jkiice.2017.21.2.353
- S. Francis, "Rohm supplies silicon carbide power modules to Formula Eracing team Venturi", 4 (2017). https://www.rohm.co.kr
- Y. F. Wu, J. Gritters, L. Shen, R. P. Smith, J. McKay, R. Barr, and R. Birkhahn, "Performance and robustness of first generation 600-V GaN-on-Si power transistors", IEEE Workshop Wide Bandgap Power Devices and Appl. (WiPDA), 6 (2013).
- F. Yu, J. Cui, Z. Zhou, K. Fang, R. Johnson, and M. Hamilton, "Reliability of Ag Sintering for Power Semiconductor Die Attach in High-Temperature Applications", IEEE. Trans. Power. Electron., 32(9), 7083 (2017). https://doi.org/10.1109/TPEL.2016.2631128
- K. S. Siow, "Are Sintered Silver Joints Ready for Use as Interconnect Material in Microelectronic Packaging", J. Electron. Mater., 43(4), 947 (2014). https://doi.org/10.1007/s11664-013-2967-3
- M. H. Roh, H. Nishikawa, and J. P. Jung, "A Review of Ag Paste Bonding for Automotive Power Device Packaging", J. Microelectron. Packag. Soc., 22(4), 15 (2015). https://doi.org/10.6117/kmeps.2015.22.4.015
- T. Wang, X. Chen, G. Q. Lu, and G. Y. Lei, "Low-Temperature Sintering with Nano-Silver Paste in Die-Attached Interconnection", J. Electron. Mater., 36(10), 1333 (2007). https://doi.org/10.1007/s11664-007-0230-5
- H. H. Zhu, L. Lu, and J. Fuh, "Development and characterisation of direct laser sintering Cu-based metal powder", J. Mater. Process. Technol., 140(1-3), 314 (2003). https://doi.org/10.1016/S0924-0136(03)00755-6
- N. S. Nobeen, T. Imade, B. H. Lee, E. J. R. Phua, C. C. Wong, and C. L. Gan, "Transient liquid phase (TLP) bonding using Sn/Ag multilayers for high temperature applications", Proc. 15th Electronics Packaging Technology Conference (EPTC), Singapore, 647 (2013).
- T. A. Tollefsen, A. Larsson, O. M Lovvik, and K. Aasmundtveti, "Au-Sn SLID bonding-properties and possibilities", Metallurgical and Materials Transactions B, 43B, 397 (2012).
- C. I. Kizilyalli, A. Edwards, D. Bour, H. Shah, D. Disney, and H. Nie, "Very-High Performance GaN-on-GaN Diodes", 1st IEEE Workshop on Wide bandgap Devices and Applications (2013).
Cited by
- Growth of α-Ga2O3 Epitaxial Films on Al2O3 by Halide Vapor Pressure Epitaxy vol.26, pp.4, 2018, https://doi.org/10.6117/kmeps.2019.26.4.113