Proceedings of the Korea Crystallographic Association Conference (한국결정학회:학술대회논문집)
- 2007.11a
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- Pages.42-42
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- 2007
Effect of Post-Oxidation Annealing on High-Temperature Grown $SiO_2/4H-SiC$ Interface
- Moon, Jeong-Hyun (Department of Materials Science and Engineering, Seoul National University) ;
- Song, Ho-Keun (Department of Materials Science and Engineering, Seoul National University) ;
-
Yim, Jeong-Hyuk
(Department of Materials Science and Engineering, Seoul National University)
;
- Oh, Myeong-Suk (Department of Materials Science and Engineering, Seoul National University) ;
- Lee, Jong-Ho (Department of Materials Science and Engineering, Seoul National University) ;
- Bahng, Wook (Power Semiconductor Research Group, Korea Electrotechnology Research Institute (KERI)) ;
- Kim, Nam-Kyun (Power Semiconductor Research Group, Korea Electrotechnology Research Institute (KERI)) ;
- Kim, Hyeong-Joon (Department of Materials Science and Engineering, Seoul National University)
- Published : 2007.11.16
Abstract
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