• 마이크로전자및패키징학회지
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• 제21권2호
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• pp.71-78
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• 2014

Silicon has been most widely used semiconductor material for power electronic systems. However, Si-based power devices have attained their working limits and there are a lot of efforts for alternative Si-based power devices for better performance. Advances in power electronics have improved the efficiency, size, weight and materials cost. New wide band gap materials such as SiC have now been introduced for high power applications. SiC power devices have been evolved from lab scale to a viable alternative to Si electronics in high-efficiency and high-power density applications. In this article, the potential impact of SiC devices for power applications will be discussed along with their Si counterpart in terms of higher switching performance, higher voltages and higher power density. The recent progress in the development of high voltage power semiconductor devices is reviewed. Future trends in device development and industrialization are also addressed.

• 전력전자학회논문지
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• 제23권3호
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• pp.168-173
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• 2018

In this paper, an auxiliary power supply (APS) for railroad cars is proposed. The APS can reduce the number of devices required to supply power through structural modification and operates at a high switching frequency by application of a SiC device. The voltage stress on the device in the proposed circuit can be reduced to less than half of the input voltage of the system; thus, a device with low breakdown voltage can be designed. By adapting a SiC device instead of an IGBT device, the proposed circuit can reduce switching and conduction losses and operate at a high switching frequency, thereby reducing output voltage and inductor current ripples in the proposed circuit. The theoretical analysis results of the proposed APS are verified with a 40 kW computer-based simulation and a 2 kW experiment.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.229-232
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• 2001

Modified Materka-Kacprzak 대신호 MESFET(Metal Semiconductor Field Effect Transistor) model을 사용하여 4H-SiC MESFET의 대신호 모델링을 수행하였다. Silvaco사의 소자 시뮬레이터인 ATLAS를 사용하여 4H-SiC MESFET 소자 시뮬레이션을 수행하고, 이 절과를 modified Materka 대신호 모델을 사용하여 모델링 하였다. 시뮬레이션 및 모델링 결과는 -8V의 pinch off 전압과 V/sub GS=0V, V/sub DS=25V에서 I/sub DSS=270㎃/㎜, G/sub m=45㎳/㎜를 얻을 수 있었고, 진력 특성 시뮬레이션을 통해 2㎓, V/sub GS=-4V, V/sub DS=25V에서 1()dB의 Gain과 34dBm(1dB compression point)의 출력전력, 7.6W/㎜의 전력밀도, 37%의 PAE(power added efficiency)를 얻을 수 있었다.

• Journal of Power Electronics
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• 제18권1호
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• pp.23-33
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• 2018

Silicon Carbide (SiC) MOSFET belongs to the family of wide-band gap devices with inherit property of low switching and conduction losses. The stable operation of SiC MOSFET at higher operating temperatures has invoked the interest of researchers in terms of its application to high power density (HPD) power converters. This paper presents a performance study of SiC MOSFET based two-phase interleaved boost converter (IBC) for regulation of avionics bus voltage in more electric aircraft (MEA). A 450W HPD, IBC has been developed for study, which delivers 28V output voltage when supplied by 24V battery. A gate driver design for SiC MOSFET is presented which ensures the operation of converter at 250kHz switching frequency, reduces the miller current and gate signal ringing. The peak current mode control (PCMC) has been employed for load voltage regulation. The efficiency of SiC MOSFET based IBC converter is compared against Si counterpart. Experimentally obtained efficiency results are presented to show that SiC MOSFET is the device of choice under a heavy load and high switching frequency operation.

• 한국전기전자재료학회논문지
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• 제36권4호
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• pp.385-390
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• 2023

In this paper, the 1,700 V level SiC-based power MOSFET device widely used in electric vehicles and new energy industries was designed, that is, a single trench gate power MOSFET structure and a double trench gate power MOSFET structure were proposed to analyze electrical characteristics while changing the design and process parameters. As a result of comparing and analyzing the two structures, it can be seen that the double trench gate structure shows quite excellent characteristics according to the concentration of the drift layer, and the breakdown voltage characteristics according to the depth of the drift layer also show excellent characteristics of 200 V or more. Among them, the trench gate power MOSFET device can be applied not only to the 1,700 V class but also to a voltage range above it, and it is believed that it can replace all Si devices currently applied to electric vehicles and new energy industries.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2017년도 추계학술대회
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• pp.133-134
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• 2017

This paper analyzes switch Device losses and efficiency depending on SiC and Si devices. The switch devices loss is compared to Si and SiC-based elements through Threshold Voltage and Miller Platequ Voltage. And analyzed through comparison of each switching loss by experiment.

• Journal of Electrical Engineering and Technology
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• 제7권2호
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• pp.236-239
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• 2012

In this paper, we study the transient characteristics of 4H-SiC DMOSFETs with different interface charges to improve the turn-on rising time. A physics-based two-dimensional mixed device and circuit simulator was used to understand the relationship between the switching characteristics and the physical device structures. As the $SiO_2$/SiC interface charge increases, the current density is reduced and the switching time is increased, which is due primarily to the lowered channel mobility. The result of the switching performance is shown as a function of the gate-to-source capacitance and the channel resistance. The results show that the switching performance of the 4H-SiC DMOSFET is sensitive to the channel resistance that is affected by the interface charge variations, which suggests that it is essential to reduce the interface charge densities in order to improve the switching speed in 4H-SiC DMOSFETs.

• 전기전자학회논문지
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• 제27권1호
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• pp.103-108
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• 2023

본 연구에서는 SiC 기반의 1200V급 전력 MOSFET을 최적 설계하기 위하여 공정 및 설계 파라미터를 변화시키면서 실험을 수행한 후, 필수적인 전기적 특성을 도출하였다. 그리고 최종적으로 설계하고자 하는 트렌치 게이트형 SiC 전력 MOSFET 소자의 우수성을 확보하기 위하여 플래너 게이트 SiC 전력 MOSFET을 같은 조건하에 설계하여 전기적인 특성을 도출하여 트렌치 게이트형 SiC 전력 MOSFET 소자와 비교 분석을 하였다. 비교 분석한 결과, 항복전압을 그대로 유지한 상태에서 온 저항은 각각 플래너게이트 전력 MOSFET은 1,840mΩ, 트렌치 게이트 전력 MOSFET는 40mΩ으로 약 40배 이상 우수한 특성을 도출하였다. 온 저항은 에너지 효율에 직접적인 영향을 끼치는 바 에너지 효율에 있어 우수한 결과를 도출한 것으로 판단되었다. 본 실험을 통해 최적화된 소자는 1200V급에 일반적으로 사용되었던 IGBT소자를 충분히 대체 가능한 것으로 판단되었다.

• 한국전기전자재료학회논문지
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• 제20권12호
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• pp.1056-1061
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• 2007

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. The surface morphology was dramatically changed with varying the SiC/Al ratio. When the SiC/Al ratio of 90/1 was used, the step bunching was not observed in this magnification and the ratio of SiC/Al is an optimized range to grow of p-type SiC epitaxial layer. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. 4H-SiC MESFETs haying a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized. It was confirmed that the increase of the negative voltage applied on the gate reduced the drain current, showing normal operation of FET device.

• 한국전자파학회논문지
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• 제12권6호
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• pp.890-898
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• 2001

Modified Materka-Kacprzak 대신호 MESFET(Metal Semiconductor Field Effect Transistor) model을 사용하여 4H-SiC MESFET의 대신호 모델링을 수행하였다. Silvaco사의 소자 시뮬레이터인 ATLAS를 사용하여 4H-SiC MESFET 소자 시뮬레이션을 수행하고, 이 결과를 modified Materka 대신호 모델을 사용하여 모델링 하였다. 시뮬레이션 및 모델링 결과는 -8 V의 pinch off 전압과 $V_{GS}$ =0 V, $V_{DS}$ =25 V에서 $I_{DSS}$270 mA/mm, $G_{m}$ =52.8 ms/mm를 얻을 수 있었고, 전력 특성 시뮬레이션을 통해 2GHz, $V_{GS}$ =-4V, $V_{DS}$ =25 V에서 10dB의 Gain과 34dBm(1 dB compression point)의 출력전력, 7.6W/mm의 전력밀도, 37%의 PAE(power added efficiency)를 얻을 수 있었다.다.