• Journal of the Korean Physical Society
• /
• 제73권9호
• /
• pp.1356-1361
• /
• 2018

Replacing conventional Si diodes with SiC diodes in Si insulated gate bipolar transistor (IGBT) modules is advantageous as it can reduce power losses significantly. Also, the fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present conventional Si diodes cannot do. In this work, the electrical test results for Si-IGBT/4HSiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. These substrates are built for two voltage ratings, 1.7 kV and 3.3 kV. Comparisons of the 1.7 kV and the 3.3 kV Si-IGBT/Si-diode substrates (Si substrates) at room temperature ($20^{\circ}C$, RT) and high temperature ($H125^{\circ}C$, HT) have shown that the switching losses in hybrid SiC substrates are miniscule as compared to those in Si substrates but necessary steps are required to mitigate the ringing observed in the current waveforms. Also, the effect of design variations on the electrical performance of 1.7 kV, 50 A diodes is reported here. These variations are made in the active and termination regions of the device.

• 센서학회지
• /
• 제8권6호
• /
• pp.448-453
• /
• 1999

Pd-SiC 쇼트키 다이오드를 이용한 수소 가스 센서를 개발하였다. Pd-SiC 쇼트키 다이오드의 수소 가스 감지특성을 I-V 및 ${\Delta}I$-t 분석을 통하여 수소 농도와 온도 함수로서 분석하였다. 또한, 수소 흡착에 의한 Pd-SiC 쇼트키 다이오드의 장벽 높이의 변화를 조사하였다. 수소 원자의 흡착이 다이오드의 장벽 높이의 변화와 관계되는 것을 I-V 분석을 이용하여 정상 상태에서의 가스 반응 속도론에 의하여 확인하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.805-808
• /
• 2002

A carbon monoxide gas sensor utilizing Pt-SiC, Pt-SnO2-SiC diode structure was fabricated. Since the operating temperature for silicon devices in limited to 200oC, sensor which employ the silicon substrate can not at high temperature. In this study, CO gas sensor operating at high temperature which utilize SiC semiconductor as a substrate was developed. Since the SiC is the semiconductor with wide band gap. the sensor at above $700^{\circ}C$. Carbon monoxide-sensing behavior of Pt-SiC, Pt-SnO2-SiC diode is systematically compared and analyzed as a function of carbon monoxide concentration and temperature by I-V and ${\Delta}$I-t method under steady-state and transient conditions.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1998년도 추계학술대회 논문집
• /
• pp.163-166
• /
• 1998

The mechanism of methane sensing by Pd-SiC diode was investigated over the temperature range of 400~$600^{\circ}C$. The effects or methane gas reaction on the parameters such as barrier height, initial rate of methane gas reaction are investigated. The methane gas reaction kinetics on the device are also discussed. The physical and chemical mechanism responsible for methane detection are proposed. Analysis of steady-state reaction kinetics using I-V method confirmed that methane gas reaction processes are responsible for the barrier height change in the diode.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
• /
• pp.68-68
• /
• 2003

SiC는 wide bandgap 물질로서 그 material properties로 인하여, high tmperature, high power, high frequency영역으로의 사용이 기대되는 물질이다. 따라서 SiC에 대한 기본적인 연구와 더불어, 그 소자 제작 및 응용에의 연구가 절실한 시점이다. 이에, SiC 기본적인 소자중 하나인 Schottky diode에 대해 연구하였다. 본 논문은 Schottky contact 물질로써 현재까지 연구가 미비한 Ru을 사용하였다. Ru은 Pt 계열물질로써, 다른 metal에 비하여 열역학적으로 안정하며, 또한 그의 산소 화합물인 RuO2는 다른 oxide에 비하여 전도성 이 높은 장점을 가지고 있다. 따라서 Ru-SiC diode는 이러한 측면에서 연구할 만한 가치가 있다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.92-94
• /
• 2004

In this investigation, 3C-SiC film deposited $1000{\AA}$ on the p-type silicon wafer which is resistance $0{\sim}30[{\Omega}{\cdot}cm]$ by PECVD (Plasma-enhanced Chemical Vapor Deposition). We deposited Cr, Ta, Pt in front of wafer to utilize DC-sputter for $500{\AA}$, the SiC Schottky diode made from Al ohmic contact about $4000{\AA}$, and to each different temperature which annealing in Ar atmosphere, we had forward characteristic analysis along to annealing temperature.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
• /
• pp.28-28
• /
• 1998

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.350-353
• /
• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• Journal of Power Electronics
• /
• 제13권4호
• /
• pp.584-591
• /
• 2013

In this paper, a hybrid booster power module with Si IGBT and Silicon Carbide (SiC) Schottky Barrier Diode (SBDs) is presented. The switching characteristics of the hybrid booster module are compared with commercial Silicon IGBT/Si PIN diode based modules. We applied the booster power module into a non-isolated on board vehicle charger with a simple buck-booster topology. The performances of the on-vehicle charger are analyzed and measured with different power modules. The test data is measured in the same system, at the same points of operation, using the conventional Si and hybrid Si/SiC power modules. The measured power conversion efficiency of the proposed on-vehicle charger is 96.4 % with the SiC SBD based hybrid booster module. The conversion efficiency gain of 1.4 % is realizable by replacing the Si-based booster module with the Si IGBT/SiC SBD hybrid boost module in the 6.6 kW on-vehicle chargers.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.275-275
• /
• 2008

This paper describe the fabrication of a Pd/polycrystalline 3C-SiC schottky diode and its characteristics, in which the polycrystalline 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC Schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.