• Korean Journal of Optics and Photonics
• /
• v.9 no.3
• /
• pp.162-167
• /
• 1998

$SiO_xF_y$ optical thin films of lower refractive indices than glass substrates were fabricated by the CF$_4$ ion beam assisted deposition method and the optical, structural and chemical properties of them were investigated. Refractive index of $SiO_xF_y$ films was varied from 1.455 to 1.394 by decreasing the anode voltage or from 1.462 to 1.430 by increasing the current density of end-Hall ion source. FT-IR and XPS analyses show that as the F concentration increases, the Si-O bond at $1080m^{-1}$ shifts to higher wavenumber, the OH bonds are reduced drastically, and the fluorine atoms at the air-film interface are desorbed out by reacting with $H_2O$ in the atmosphere. $SiO_xF_y$ thin films are amorphous by the XRD analysis and have the compressive stress below 0.3 GPa. As an application of $SiO_xF_y$ thin films a two-layer antireflection coating was fabricated using a $SiO_xF_y$ film as a low refractive index layer and a Si film as an absorbing one.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.12
• /
• pp.1028-1032
• /
• 2009

In this study, the influences of silicon-based gas barrier films fabricated by using a facing target sputtering(FTS) system on the gas permeability for flexible displays have been investigated. Under these optimum conditions on the $SiO_x$ film with oxygen concentration($O_2/Ar+O_2$) of 3.3% and the $SiO_xN_y$ film with nitrogen concentration($N_2/Ar+O_2+N_2$) of 30% deposited by the FTS system, it was found that the films were grown about 4 times higher deposition rate than that of the conventional sputtering system and showed high transmittance about 85% in the visible light range. Particularly, the polyethylene naphthalate(PEN) substrates with the $SiO_x$ and/or $SiO_xN_y$ films showed the enhanced properties of decreased water vapor transmission rate (WVTR) over $10^{-1}\;g/m^2{\cdot}day$ compared with the PEN substrate without any gas barrier films, which was due to high packing density in the Si-based films with high plasma density by FTS process and/or the denser chemical structure of Si-N bond in the $SiO_xN_y$ film.

• The Journal of Korean Academy of Prosthodontics
• /
• v.29 no.2
• /
• pp.245-265
• /
• 1991

The purpose of this study was to observe the changes of the elemental transmission and bond strength between the metal and porcelain according to various kinds of ion beam mixing method. ion beam mixing of $meta1/SiO_2$ (silica), $meta1/Al_2O_3$(alumina) interfaces causes reactions when the $Ar^+$ was implanted into bilayer thin films using a 100KeV accelerator which was designed and constructed for this study. A vacuum evaporator used in the $10^{-5}-10^{-6}$ Torr vacuum states for the evaporation. For this study, three kinds of porcelain metal selected, -precious, semiprecious, and non-precious. Silica and alumina were deposited to the metal by the vacuum evaporator, separately. One group was treated by two kinds of dose of the ion beam mixing $(1\times10^{16}ions/cm^2,\;5\times10^{15}ions/cm^2)$, and the other group was not mixed, and analyzed the effects of ion beam mixing. The analyses of bond strength, elemental transmissions were performed by the electron spectroscopy of chemical analysis (ESCA), light and scanning electron microscope, scratch test, and micro Vickers hardness tests. The finding led to the following conclusions. 1. In the scanning electron and light microscopic views, ion beam mixed specimens showed the ion beam mixed indentation. 2. In the micro Vickers hardness and scratch tests, ion beam mixed specimens showed higher strength than that of non mixed specimens, however, nonprecious metal showed a little change in the bond strength between mixed and non mixed specimens. 3. In the scratch test, ion beam mixed specimens showed higher shear strength than that of non treated specimens at the precious and semiprecious groups. 4. In the ESCA analysis, Au-O and Au-Si compounds were formed and transmission of the Au peak was found ion beam mixed $SiO_2/Au$ specimen, simultaneously, in the higher and lower bonded areas, and ion beam mixed $SiO_2/Ni-Cr$ specimen, oxygen, that was transmitted from $SiO_2\;to\;SiO_2/Ni-Cr$ interface combined with 12% of Ni at the interface.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.14 no.9
• /
• pp.2065-2070
• /
• 2010

The diluted PMMA treated $SiO_2$ films as an passivation materials for semiconductor devices was researched by using the FTIR spectra. The diluted PMMA solution with various ratios changed the surface of $SiO_2$ film as the hydrophilic, hydrophobic or hybrid type properties. The sample 7 with little carbon content showed dramatically the chemical variation by the FTIR spectra analysis. Beacuse the little carbon with electrons decreased the polarity and surface energy on the $SiO_2$ film, and then became a stable bonding structure and decreased the leakage current. The FTIR spectra can define the detail variation due to the chemical reaction on the organic thin film, and help to research the characteristic of the organic materials.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.24 no.1
• /
• pp.41-45
• /
• 2014

We have investigated the passivation property of $SiN_x$ and $SiO_2$ thin films formed using various process conditions for the application of crystalline Si solar cells. An increase in the thickness of $SiN_x$ deposited using plasma enhanced chemical vapor deposition (PECVD) led to the improvement of passivation quality. This could be associated with the passivation of Si dangling bonds by hydrogen atoms which were supplied during PECVD deposition. The $SiO_2$ thin films grown using dry oxidation process exhibited better passivation behavior than those using wet oxidation process, implying the dry oxidation process was more effective in the formation of high quality $SiO_2$ thin films. The relative effective life time gradually decreased with increasing dry oxidation temperature. Such a degradation of passivation behavior could be attributed to the increase in interface trap density caused by thermal damages.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.1
• /
• pp.169-178
• /
• 1998

The crystal phases precipitated in various compositions glass of CaO-$SiO_2-P_2O_5$ system, were identified by XRD. E composition (CaO 49.4, $SiO_2\;36.8,\;P_2O_5$ 8.8 wt%) glass in which both apatite(($Ca_{10}(PO_4)_6O$ and $\beta$-wollastonite($CaSiO_3$) crystals would precipitate by heating, was selected as an experimental composition to prepare the glass ceramics with high bending strength and good bioactivity to the living bone. Glass powders of E composition were unidirectionally crystallized at $1050^{\circ}$C in the temperature-gadient furnace and the resultant glass ceramics were characterized. Bending strength of the glass ceramics was also measured. To investigate the bond forming ability between the glass ceramics and living bone tissue, soaking test of glass ceramics in simulated body fluid was carried out. Densed glass ceramics composed of apatite and $\beta$-wollastonite crystal were prepared by unidirectional crystallization under the optimum conditions. (2 0 2) plane of $\beta$-wollastonite crystals tended to grow perpendicularly to the crystallization direction. Average bending strength of this glass ceramics was 186.9 MPa, higher than that of the glass ceramics prepared by isothermal (not directional) crystallization In soaking test, a thin layer of apatite crystallite was formed on surface of the glass ceramics in 3 days. Apatite crystals formed on the glass ceramics could be act a role to make the chemical bond between the glass ceramics and living bone tissue.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.2
• /
• pp.101-106
• /
• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• Journal of the Korean Chemical Society
• /
• v.60 no.4
• /
• pp.239-244
• /
• 2016

We investigated the structures and electronic properties of Cu_mSiO_m+1 clusters with m = 0 - 7. For these clusters, we replaced a Cu atom in the copper oxide clusters with a Si atom. The B3LYP functional and LANL2DZ basis set were used for optimization of the molecular structures of all neutral and charged clusters. The bond distances, bond angles, and Mulliken charges were calculated to study the structural properties. In addition, in order to understand the electronic properties, we examined the ionization energies, electronic affinities, and second differences in energies.

• Korean Journal of Materials Research
• /
• v.19 no.1
• /
• pp.37-43
• /
• 2009

Silicon dioxide as gate dielectrics was grown at $400^{\circ}C$ on a polycrystalline Si substrate by inductively coupled plasma oxidation using a mixture of $O_2$ and $N_2O$ to improve the performance of polycrystalline Si thin film transistors. In conventional high-temperature $N_2O$ annealing, nitrogen can be supplied to the $Si/SiO_2$ interface because a NO molecule can diffuse through the oxide. However, it was found that nitrogen cannot be supplied to the Si/$SiO_2$ interface by plasma oxidation as the $N_2O$ molecule is broken in the plasma and because a dense Si-N bond is formed at the $SiO_2$ surface, preventing further diffusion of nitrogen into the oxide. Nitrogen was added to the $Si/SiO_2$ interface by the plasma oxidation of mixtures of $O_2/N_2O$ gas, leading to an enhancement of the field effect mobility of polycrystalline Si TFTs due to the reduction in the number of trap densities at the interface and at the Si grain boundaries due to nitrogen passivation.

• The Korean Journal of Ceramics
• /
• v.6 no.4
• /
• pp.339-342
• /
• 2000

In the present study, we attempted to apply DV-X$\alpha$ method to expressing the reactivity of materials. The expression of reactivity was discussed by comparison between ${\gamma}$-C$_2$G having hydraulic activity and ${\gamma}$-C$_2$S not having hydraulic activity at normal conditions. It was found that the model cluster used for calculation can finely reproduce the bulk and surface states using with and without point charge, respectively. The hydration state was also represented by placing OH￣ on the surface of the cluster. It was calculated that the bond strength of the first layer (as surface) was bigger than that of inner layers (as bulk) for ${\gamma}$-C$_2$S while that of the first layer for ${\gamma}$-C$_2$G was smaller than that of inner layers. Subsequently a model in which OH￣ is coordinated on Ca at the surface was also calculated. The bond strength with OH￣ was stronger than that without OH￣, while for ${\gamma}$-C$_2$G the bond strength with OH￣ was weaker than that without OH￣. From these results, it is concluded that the hydraulic activity depends on whether the bond strength for hydrated state becomes weaker than that unhydrated state or not.