Korean Journal of Optics and Photonics (한국광학회지)

Optical Society of Korea (한국광학회)
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Preparation of low refractive index $SiO_xF_y$ optical thin films by ion beam assisted deposition

이온빔보조증착으로 제작한 저굴절률 $SiO_xF_y$ 광학박막의 특성 연구

  • 이필주 (인하대학교 이과대학 물리학과) ;
  • 황보창권 (인하대학교 이과대학 물리학과)
  • Published : 1998.06.01
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Abstract

$SiO_xF_y$ optical thin films of lower refractive indices than glass substrates were fabricated by the CF$_4$ ion beam assisted deposition method and the optical, structural and chemical properties of them were investigated. Refractive index of $SiO_xF_y$ films was varied from 1.455 to 1.394 by decreasing the anode voltage or from 1.462 to 1.430 by increasing the current density of end-Hall ion source. FT-IR and XPS analyses show that as the F concentration increases, the Si-O bond at $1080m^{-1}$ shifts to higher wavenumber, the OH bonds are reduced drastically, and the fluorine atoms at the air-film interface are desorbed out by reacting with $H_2O$ in the atmosphere. $SiO_xF_y$ thin films are amorphous by the XRD analysis and have the compressive stress below 0.3 GPa. As an application of $SiO_xF_y$ thin films a two-layer antireflection coating was fabricated using a $SiO_xF_y$ film as a low refractive index layer and a Si film as an absorbing one.

CF4 이온빔보조증착법으로 굴절률이 유리보다 낮은 SiOxFy 박막을 제작하고 광학적, 구조적 및 화학적 특성을 연구하였다. End-Hall 이온총의 양극전압의 간소에 따라 SiOxFy 박막의 굴절률은 1.455까지 변하였으며, 이온빔 전류밀도의 증가에 따라서 굴절률은 1.462에서 1.430까지 변하였다. XPS와 FT-IR 분석으로부터 SiOxFy 박막의 F양이 증가함에 따라 Si-O 결합은 파수가 높은 쪽으로 이동하였고, F이 약 8.5at.%인 SiOxFy 박막은 OH 결합이 매우 감소하였으여, 박막 표면의 F이 H2O와 결합하여 탈착되는 것을 알았다. SiOxFy 박막의 응력은 0.3GPa 이하의 압축응력이었으며, 결정구조는 비정질이었다. SiOxFy 박막의 응용으로서 SiOxFy 박막과 흡수층 Si 박막을 이용하여 2층 반사방지막을 제작하였다.

Keywords

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