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http://dx.doi.org/10.4313/JKEM.2009.22.12.1028

Process Characteristics of SiOx and SiOxNy Films on a Gas Barrier Layer using Facing Target Sputtering (FTS) System  

Son, Jin-Woon (울산대학교 공과대학 전기전자정보시스템공학부)
Park, Yong-Jin (대구가톨릭대학교 전자공학과)
Sohn, Sun-Young (대구가톨릭대학교 전자공학과)
Kim, Hwa-Min (대구가톨릭대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.12, 2009 , pp. 1028-1032 More about this Journal
Abstract
In this study, the influences of silicon-based gas barrier films fabricated by using a facing target sputtering(FTS) system on the gas permeability for flexible displays have been investigated. Under these optimum conditions on the $SiO_x$ film with oxygen concentration($O_2/Ar+O_2$) of 3.3% and the $SiO_xN_y$ film with nitrogen concentration($N_2/Ar+O_2+N_2$) of 30% deposited by the FTS system, it was found that the films were grown about 4 times higher deposition rate than that of the conventional sputtering system and showed high transmittance about 85% in the visible light range. Particularly, the polyethylene naphthalate(PEN) substrates with the $SiO_x$ and/or $SiO_xN_y$ films showed the enhanced properties of decreased water vapor transmission rate (WVTR) over $10^{-1}\;g/m^2{\cdot}day$ compared with the PEN substrate without any gas barrier films, which was due to high packing density in the Si-based films with high plasma density by FTS process and/or the denser chemical structure of Si-N bond in the $SiO_xN_y$ film.
Keywords
Facing target sputtering; $SiO_x$; $SiO_xN_y$; High deposition rate; Gas barrier layer;
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Times Cited By KSCI : 4  (Citation Analysis)
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