• 반도체디스플레이기술학회지
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• 제7권3호
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• pp.1-4
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• 2008

The chemical shift of SiOC film was observed according to the flow rate ratio. SiOC film had the broad main band of $880\sim1190cm^{-1}$ and the sharp Si-$CH_3$ bond at $1252cm^{-1}$, and the peak position of the main bond in the infrared spectra moved to high frequency according to the increasing of an BTMSM flow rate. So the increment of the alkyl group induced the C-H bond condensation in the film, and shows the blueshift in the infrared spectra. In the case of P5000 system of Applied Materials Corporation, the strong bond of Si-CH3 bond in precursor does not enough to dissociated and ionized, because low plasma energy due to the capactive coupled CVD. Therefore, there was the sharp peak of Si-$CH_3$ bond at $1252cm^{-1}$.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.487-488
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• 2008

SiOC films containing alkyl groups have a low dielectric constant because of the interaction between the C-H hydrogen bonds and the oxygen of high electro-negative atom. The Si-$CH_3$ in a void is broken by the $O_2$, therefore the strength of CH bond in Si-O-O-$CH_3$ bond increases. The Si-O-O-$CH_3$ bond is broken by nucleophilic attack due to Si atom, again. The elongation of C-H bond causes the red shift, and the compression of C-H bond causes the blue shift. Among these chemical shifts, the blue shift from $1000\;cm^{-1}$ to $1250\;cm^{-1}$ was related with the formation of pores. If the oxygen is deficient condition, the methylradicals of the electron-rich substitution group terminate easily the Si-O-Si cross-link, and the pore is originated from the cross-link breakdown due to much methyl radicals of Si-$CH_3$. The dielectric constant of the films decreases due to pore generation.

• 한국산학기술학회논문지
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• 제11권11호
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• pp.4468-4472
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• 2010

ICP-CVD 방법에 의해 제작된 SiOC 박막을 유전상수와 화학적 이동의 상관성에 대하여 조사하였다. SiOC 박막은 플라즈마 에너지에 의해서 해리작용과 재결합작용에 의해서 cross link 구조를 갖게 되는 Si-O 와 C-O 결합으로 구성된 $930{\sim}1230\;cm^{-1}$ 영역에서 혼합된 Si-O-C 주 결합으로 이루어졌다. C-O 결합은 $1270cm^{-1}$에서 보여지는 Si-$CH_3$ 결합의 말단부분인 C-H 결합이 전기음성도가 큰 산소에 의해서 끌리는 효과로부터 만들어진 결합이다. 그러나 Si-O 결합은 Si-$CH_3$ 결합이 분해되고 난뒤 2차 이온결합에 의해서 만들어진 결합이다. Si-O 결합의 증가는 주결합에서 오른쪽 결합이 증가하기 때문이며, FTIR 스펙트라에 의해서 red shift로 나타났다. 이러한 결과는 SiOC 박막이 보다 더 안정되고 강한 박막임을 의미한다. 그래서 SiOC 박막은 열처리 후 비정질도가 높고 거칠기가 감소되는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.170-171
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• 2006

The chemical shift of SiOC film was observed according to the flow rate ratio. SiOC film has the broad main band of $880{\sim}1190cm^{-1}$ and the sharp Si-$CH_3$ bond at $1252cm^{-1}$, and the infrared spectra in the Si-O-C bond moved to low frequency according to the increasing of an oxygen flow rate. The chemical shift affected the carbon content in the SiOC film, and the decreasing of carbon atoms elongated the C-H bonding length, relatively. The main bond without the sharp Si-$CH_3$ bond at $1252cm^{-1}$ consisted of Si-C, C-O and Si-O bonds, and became the bonding structure of the Si-O-C bond.

• Bulletin of the Korean Chemical Society
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• 제28권9호
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• pp.1588-1590
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• 2007

• Bulletin of the Korean Chemical Society
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• 제6권4호
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• pp.196-202
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• 1985

A Very Low Pressure Reactor (VLPR) is constructed for the kinetic study of atom-molecule bimolecular elementary reactions. The basic principles and the versatility of the method are described. By using the VLPR technique the forward (k1) and the reverse (k-1) rate constants for Br atom reaction with trimethylsilane are studied; Br + $(CH_3)_3$SiH k1 ${\leftrightarrow}$ k-1 HBr + $(CH_3)_3$Si. From the kinetic data and the entropy estimation the bond dissociation energy for Si-H bond in trimethylsilane is calculated to be 90.1 kcal/mole $({\pm}1.1$ kcal/mole). The Arrhenius parameters for k1 are found to be log A = 10.6 l/mole·sec, $E_a$ = 4.4 kcal/mole respectively. For the comparison purpose analogous reaction for carbon compound ; Br + $(CH_3)_3$CH ${\rightarrow}$ HBr + $(CH_3)_3$C was also studied. The corresponding rate constant and equilibrium constant at $25^{\circ}C$ are found to be 2.67 ${\times}$ $10^6l$/mole${\cdot}$sec and 160 respectively.

• 대한화학회지
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• 제38권3호
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• pp.241-245
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• 1994

산화성 첨가반응을 이용하여 실라트란(분자내 Si-N고리횡단 상호작용을 갖는 5-배위의 규소화합물)의 규소원자와 주족원소간에 Si-M 결합작용이 있는 새로운 이종다핵 화합물을 합성하려고 시도하였다. 1-브로모실라트란(1a)과 $SnBr_2를 반응시켜 노란색(2a)과 흰색(2b)의 고체 혼합물을 얻었고 용해도 차에 의해 각각을 분리하여 ^1H-NMR, ^{29}Si-NMR, ^{119}Sn-NMR, Mass스펙트럼으로 규명한 결과 노란색 화합물만이 Si-Sn결합을 갖는 것으로 판명되었다. SnBr_2를 1-브로모-3,7,10-트리메틸실라트란(1b)과도 반응시켜 Si-Sn 결합을 갖는 화합물, N[CH_2CH(CH_3)O]_3SiSnBr_3(CH_3OH)_2(3)$을 분리하여 여러가지 방법으로 확인하였다.

• Bulletin of the Korean Chemical Society
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• 제21권10호
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• pp.959-968
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• 2000

Direct reaction of elemental silicon with a mixture of (dichloromethyl)silanes 1 $[Cl_3-nMenSiCHCl_2:$ n = 0 (a), n = 1(b), n = 2(c), n = 3(d)] and hydrogen chloride has been studied in the presence of copper catalyst using a stirred bed reactor equ ipped with a spiral band agitator at various temperatures from $240^{\circ}C$ to $340^{\circ}C.$ Tris(si-lyl) methanes with Si-H bonds, 3a-d $[Cl_3-nMenSiCH(SiHCl_2)_2]$, and 4a-d $[Cl_3-nMenSiCH(SiHCl_2)(SiCl_3)]$, were obtained as the major products and tris(silyl)methanes having no Si-H bond, 5a-d $[Cl_3-nMenSiCH(SiCl_3)_2]$, as the minor product along with byproducts of bis(chlorosilyl)methanes, derived from the reaction of silicon with chloromethylsilane formed by the decomposition of 1. In addition to those products, trichlorosilane and tetra-chlorosilane were produced by the reaction of elemental silicon with hydrogen chloride. The decomposition of 1 was suppressed and the production of polymeric carbosilanes reduced by adding hydrogen chloride to 1. Cad-mium was a good promoter for and the optimum temperature for this direct synthesis was $280^{\circ}C$.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.16-22
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• 2021

We search for an appropriate initial adsorption coordination of precursor on surface by using genetic algorithm (GA) and density functional theory. SiH₄ and Al(CH₃)₃ as precursor, and OH-terminated Si (001) as surface are used for this study. Selection, crossover, and mutation as hyperparameters of GA are applied to search for the adsorption coordination of the precursors on the surface as a function of generation. Bond distances between precursors and the surface are used to explain the adsorption behavior of the precursors.

• 대한전자공학회논문지SD
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• 제44권11호
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• pp.20-25
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• 2007

SiOC 박막과 같은 유무기 하이브리드 실리카 물질에서의 열처리효과에 의한 결합구조의 변화와 유전상수에 관하여 연구하였다. 유무기 하이브리드 실리카 물질은 BTMSM과 산소의 혼합가스를 이용한 CVD방법에 의하여 증착되었다. 유무기 하이브리드 실리카 물질은 증착조건에 따라 3가지 유형으로 분류되었으며, 유전상수는 MIS 구조에 의하여 조사되었다. XPS 분석에 의하여 C 1s 스펙트라는 O2/BTMSM=1.5의 유량비를 갖는 박막에서 282.9 eV의 organometallic carbon 반응을 보여주는 피크를 나타내었다. organometallic carbon반응의 결과는 안정성 있는 크로스 링크 결합구조를 만들어내며, 하이브리드 특성을 갖는 이 박막에서 열처리 후 유전상수는 가장 낮았다.