• Molecules and Cells
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• 제45권10호
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• pp.749-760
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• 2022

Osteoclast generation from monocyte/macrophage lineage precursor cells needs to be tightly regulated to maintain bone homeostasis and is frequently over-activated in inflammatory conditions. PARK2, a protein associated with Parkinson's disease, plays an important role in mitophagy via its ubiquitin ligase function. In this study, we investigated whether PARK2 is involved in osteoclastogenesis. PARK2 expression was found to be increased during the receptor activator of nuclear factor-κB ligand (RANKL)-induced osteoclast differentiation. PARK2 gene silencing with siRNA significantly reduced osteoclastogenesis induced by RANKL, LPS (lipopolysaccharide), TNFα (tumor necrosis factor α), and IL-1β (interleukin-1β). On the other hand, overexpression of PARK2 promoted osteoclastogenesis. This regulation of osteoclastogenesis by PARK2 was mediated by IKK (inhibitory κB kinase) and NF-κB activation while MAPK (mitogen-activated protein kinases) activation was not involved. Additionally, administration of PARK2 siRNA significantly reduced osteoclastogenesis and bone loss in an in vivo model of inflammatory bone erosion. Taken together, this study establishes a novel role for PARK2 as a positive regulator in osteoclast differentiation and inflammatory bone destruction.

• 한국건축시공학회지
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• 제24권2호
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• pp.181-191
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• 2024

석회석은 시멘트의 주원료로써 90% 이상을 사용하고 있으며, 고온 소성 과정에서 및 석회석의 탈탄산 반응으로 많은 양의 CO₂를 배출한다. 이에 석회석 사용량 저감을 위해 원료를 대체할 수 있는 부산물에 관한 연구들이 진행 중이다. 또한 광물 탄산화는 기체인 CO₂를 탄산염 광물로 전환하는 기술로 산업시설에서 배출되는 CO₂를 포집하여 광물로 저장 및 자원화할 수 있다. 한편, 건설폐기물은 계속적으로 증가하는 추세로, 폐콘크리트는 많은 부분을 차지하고 있다. 폐콘크리트는 파쇄 및 분쇄를 통해 순환골재로써 활용되고 있으나 이때 발생하는 폐콘크리트 미분말은 유효하게 재이용 되지 못하고 대부분 폐기 또는 매립되는 실정이다. 이에 본 연구에서는 폐콘크리트를 석회석 대체재로써 활용하여 광물 탄산화 기술을 적용할 수 있는 이산화탄소 반응경화 시멘트 제조 가능성을 확인하고자 한다. 폐콘크리트 미분말 치환율 및 이산화탄소 반응 경화 시멘트의 주요 광물이 생성되는 조건인 SiO₂/(CaO+SiO₂) 몰비에 따른 광물 분석 결과, 폐콘크리트 미분말 치환율과 SiO₂/(CaO+SiO₂) 몰비가 높을수록 주요 광물인 Pseudowollastonite와 Rankinite 생성량이 증가하였다. 또한 세 가지 SiO₂/(CaO+SiO₂) 몰비에서 공통적으로 폐콘크리트 미분말을 50% 치환한 경우 Gehlenite가 생성되었으며, 생성량 또한 유사하였다. 이는 콘크리트 미분말에 함유하고 있는 Al₂O₃ 성분이 CaO와 SiO₂와 반응하여 Gehlenite가 합성된 것으로 판단된다. Gehlenite의 경우 Pseudowollastonite와 Rankinite와 같이 광물 탄산화를 통해 탄산염 광물인 CaCO₃를 생성하는 산화물로써 이는 Al₂O₃가 함유된 산업부산물을 원료로 사용하는 경우 이산화탄소 반응경화 시멘트의 광물로써 활용이 가능할 것으로 기대한다.

• Korean Journal of Acupuncture
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• 제32권4호
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• pp.160-168
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• 2015

Objectives : This study was intended to observe the changes in the expression of neurotransmitters, such as nNOS, NO and NE upon the needle insertion at varying depths at the connecting point. Methods : Needles were inserted into rats, on both left and right sides of the connecting point, including the LI6, SI7 and TE5 acupoints which are three yang meridians of the hand. After insertion, needles were retained for five minutes. Each acupuncture groups were treated acupuncture at each acupoint and at the depths of superficial, middle and deep layer. After the retention, blood was drawn via cardiac puncture, and tissues of each point near meridian vessels were extracted to examine the changes in the expression of nNOS, NO and NE. Results : In terms of the effect in nNO production, there was a significant increase only in the middle and deep layer at SI7 acupoint, but there was no significant change in the expression of NO. Regarding the formation of norepinephrine within tissues, the middle layer on LI6 acupoint, the middle layer and the deep layer on TE5 acupoint showed a significant increase, while production of plasma norepinephrine was significantly decreased at the middle layer and the deep layer on LI6 acupoint and the deep layer on SI7 acupoint. Conclusions : The effect of needles applied at the connecting point of three yang meridians on the activities of nNOS, and NE could be observed, and it can be induced that the effect of needle stimulation on disrupted nervous system can be examined through additional researches based on this one.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• Journal of Information Display
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• 제2권3호
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• pp.60-65
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• 2001

Lateral type poly-silicon field emitters were fabricated by utilizing the LOCOS (Local Oxidation of Silicon) process. For the implementation 'of an ideal field emission device with quasi-zero tunneling barrier, a new and fundamental approach has used conducted by introducing an intelligent carbon-based thin layer on the cathode tip surface via a field-assisted self-aligning of carbon (FASAC) process. Fundamental lowering of the turn-on field for the electron emission was feasible through the control of both the tip shape and surface barrier height.

• 한국정밀공학회지
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• 제31권10호
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• pp.865-871
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• 2014

Paradigm shift to 3-D chip stacking in electronic packaging has induced a lot of integration challenges due to the reduction in wafer thickness and pitch size. This study presents a hybrid bonding technology by self-alignment effect in order to improve the flip chip bonding accuracy with ultra-thin wafer. Optimization of Cu pillar bump formation and evaluation of various factors on self-alignment effect was performed. As a result, highly-improved bonding accuracy of thin wafer with a $50{\mu}m$ of thickness was achieved without solder bridging or bump misalignment by applying reflow process after thermo-compression bonding process. Reflow process caused the inherently-misaligned micro-bump to be aligned due to the interface tension between Si die and solder bump. Control of solder bump volume with respect to the chip dimension was the critical factor for self-alignment effect. This study indicated that bump design for 3D packaging could be tuned for the improvement of micro-bonding quality.

• Current Photovoltaic Research
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• 제4권2호
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• pp.59-63
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• 2016

A key point of a soldering process for photovoltaic (PV) modules is to increase an adhesive strength leading a low resistivity between ribbon and cell. In this study, we intended to optimize a heating condition for the soldering process and characterize the soldered joint via physical and chemical analysis methods. For the purpose, the heating conditions were adjusted by IR lamp power, heating time and hot plate temperature for preheating a cell. Since then the peel test for the ribbon and cell was conducted, consequently the peel strength data shows that there is some optimum soldering condition. In here, we observed that the peel strength was modified by increasing the heating condition. Such a soldering property is affected by a various factors of which the soldered joint, flux and bus bar of the cell are changed on the heating condition. Therefore, we tried to reveal causes determining the soldering property through analyzing the soldered interface.

• BMB Reports
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• 제44권11호
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• pp.735-740
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• 2011

Tunicamycin, an endoplasmic reticulum (ER) stress inducer, specifically inhibits N-glycosylation. The cyclic AMP (cAMP) response element-binding protein H (CREBH) was previously shown to be regulated by UPR-dependent proteolytic cleavage in the liver. On the other hand, the role of CREBH in other tissues is unknown. In the present study, tunicamycin increased the level of CREBH activation (cleavage) as well as mRNA expression in osteoblast cells. Adenoviral (Ad) overexpression of CREBH suppressed BMP2-induced expression of alkaline phosphatase (ALP) and osteocalcin (OC). Interestingly, the BMP2-induced OASIS (structurally similar to CREBH, a positive regulator of osteoblast differentiation) expression was also inhibited by CREBH overexpression. In addition, inhibition of CREBH expression using siRNA reversed the tunicamycin-suppressed ALP and OC expression. These results suggest that CREBH inhibited osteoblast differentiation via suppressing BMP2-induced ALP, OC and OASIS expression in mouse calvarial derived osteoblasts.

• 한국재료학회지
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• 제15권6호
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• pp.419-425
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• 2005

In this paper, we describe the luminescent properties of the phosphors synthesized via sol-gel technique. When the phosphor prepared by sol-gel technique, reaction factors, such as pH condition, $R_w$ and drying temperature affected the luminescent intensity, particle size and morphology of final product. Therefore, we attempt to control these reaction factors in order to improve the luminescent efficiency of phosphors. As a result of our study, when the acid catalyst (HCl) was used, emission intensity was higher than the case of base catalyst $(NH_4OH)$. The product prepared at $R_w=60$ indicated the maximum intensity. As the increase of the $R_w$ value, the particle was agglomerated and emission intensity was decreased. Finally, optimum drying temperature of gel was found to be$ 180^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.191-191
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• 2012

InP quantum dot (QD) - organosilicon nanocomposites were synthesized and their photoluminescence quenching was mainly investigated because of their applicability to white LEDs (light emitting diodes). The as-synthesized InP QDs which were capped with myristic acid (MA) were incompatible with typical silicone encapsulants. Post ligand exchange the MA with a new ligand, 3-aminopropyldimethylsilane (APDMS), resulted in soluble InP QDs bearing Si-H groups on their surface (InP-APDMS) which allow embedding the QDs into vinyl-functionalized silicones through direct chemical bonding, overcoming the phase separation problem. However, the ligand exchange from MA to APDMS caused a significant decrease in the photoluminescent efficiency which is interpreted by ligand induced surface corrosion relying on theoretical calculations. The InP-APDMS QDs were cross-linked by 1,4-divinyltetramethylsilylethane (DVMSE) molecules via hydrosilylation reaction. As the InP-organosilicon nanocomposite grew, its UV-vis absorbance was increased and at the same time, the PL spectrum was red-shifted and, very interestingly, the PL was quenched gradually. Three PL quenching mechanisms are regarded as strong candidates for the PL quenching of the QD nano-composites, namely the scattering effect, Forster resonance energy transfer (FRET) and cross-linker tension preventing the QD's surface relaxation.