• 한국표면공학회지
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• 제31권6호
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• pp.345-358
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• 1998

The evolution of surface roughness and morphology in epitaxial Si and $Si_{0.7}Ge{0.3}$ alloys grown by UHV opm-beam sputter deposition onto nominally-singular, [100]-, and [110]-mi-scut Si(001) was investigated by stomic force microscopy and trasmission electron microscopy. The evolution of surface roughness of epitaxial Si films grown at $300^{\circ}C$ is inconsistent with conventional scaling and hyperscaling laws for kineti roughening. Unstable growth leading to the formation of mounds separated by a well-defined length scale is observed on all substrates. Contraty to previous high-temperature growth results, the presence of steps during deposition at $300^{\circ}C$ increases the tendency toward unstable growth resulting in a much earlier development of mound structures and larger surface roughnesses on vicival substrates. Strain-induced surface roughening was found to dominate in $Si_{0.7}Ge{0.3}$ alloys grown on singular Si(001) substrates at $T_S\ge450^{\circ}C$ where the coherent islands are prererentially bounded along <100> directions and eshibt {105} facetting. Increasing the film thickness above critical values for strain relaxation leads to island coalescence and surface smoothening. At very low growth temperatures ($T_s\le 250^{\circ}C$), film surfaces roughen kinetically, due to limited adatom diffusiviry, but at far lower rates than in the higher-temperature strain-induced regime. There is an intermediate growth temperature range, however, over which alloy film surfaces remain extremely smooth even at thicknesses near critical values for strain relaxation.

• Bulletin of the Korean Chemical Society
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• 제31권7호
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• pp.1973-1975
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• 2010

The electronic and adsorption structure of o-phthalaldehyde (OPA) on the H-Si(100) surface was investigated by using Near Edge X-ray Fine Structure (NEXAFS) and high resolution photoemission spectroscopy (HRPES). We confirmed that the OPA grown on the H-Si(100) surface showed good dependency with about 60 degree tilting angle using NEXAFS and a single O 1s peak by using HRPES. Hydrogen atom passivated on the Si(100) surface was found to be a seed for making one dimensional organic line that uses a chain reaction as the H-Si(100) surface was compared with the hydrogen free Si(100) surface.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.195-195
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• 2014

탄화규소(SiC)의 복합체는 고온강도, 내식성, 내마모성, 내화학 특성, 열충격성 및 기계적 특성이 우수하며 제조공정으로 CVD 공정은 많이 연구되어져 있으나 비교적 간단한 구조로 우수한 특성을 얻을 수 Si 증발입자 확산방법에 대한 체계적인 연구가 수행되고 있지 않다. 본 논문에서는 Si 증발입자가 탄소표면에서 확산 반응으로 형성되는 SiC 복합체에 대한 검토 및 연구 개발 동향을 기술한다.

• 한국표면공학회지
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• 제34권5호
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• pp.516-521
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• 2001

Dry etching of Si wafer and $SiO_2$ layers was performed using He/Cl$_2$ mixture plasma by diode-type reactive ion etcher (RIE) system. For Si etching, the Cl molecules react with the Si molecules on the surface and become chemically stable, indicating that the reactants need energetic ion bombardment. During the ion assisted desorption, energetic ions would damage the photoresist (PR) and produce the bad etch Si-profile. Moreover, we have examined the characteristics of the Cl-Si reaction system, and developed the new fabrication procedures with a $Cl_2$/He mixture for Si and $SiO_2$-etching. The developed novel fabrication procedure allows the RIE to be unexpensive and useful a Si deep etching system. Since the etch rate was proved to increase linearly with fHe and the selectivity of Si to $SiO_2$ etch rate was observed to be inversely proportional to fHe.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.90-93
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• 2004

In this work, we have used different techniques for the surface passivation: conventional thermal oxidation (CTO), rapid thermal oxidation (RTO), and plasma-enhanced chemical vapour deposition (PECVD). The surface passivation qualities of eight different single and combined double layer have been investigated both on the phosphorus non-diffused p-type FZ silicon and on phosphorus diffused emitter of 100 ${\Omega}/Sq$ and 40 ${\Omega}/Sq$. In the single layer, silicon dioxide $(SiO_2)$ passivates good on the emitter while silicon nitride (SiN) passivates better than on the non-diffused surface. In the double layers, CTO/SiN1 passivates very well both on non-diffused surface on the emitter. However, RTO/SiN1 and RTO/SiN2 stacks are more suitable for surface passivation in solar cells caused by a relatively good passivation qualities and the low optical reflection. Applying these stacks in solar cells we achieved 18.5 % and 18.8 % on 0.5 ${\Omega}$ cm FZ-Si with planar and textured front surface, respectively. The excellent open circuit voltage $(V_{oc})$ of 675.6 mV is obtained the planar cell with RTO/SiN stack.

• 한국표면공학회지
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• 제37권3호
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• pp.152-157
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• 2004

Ti-Al-N ($Ti_{75}$ $Al_{25}$ N) and Ti-Al-Si-N ($Ti_{69}$ $Al_{23}$ $Si_{8}$N) coatings synthesized by a DC magnetron sputtering technique were studied comparatively with respect to phase characterization and high-temperature oxidation behavior. $Ti_{69}$ $Al_{23}$ $Si_{ 8}$N coating had a nanocomposite microstructure consisting of nanosized(Ti,Al,Si)N crystallites and amorphous $Si_3$$N_4$, with smooth surface morphology. Ti-Al-N coating of which surface $Al_2$$O_3$ layer formed during oxidation suppressed further oxidation. It was sufficiently stable against oxidation up to about $700^{\circ}C$. Ti-Al-Si-N coating showed better oxidation resistance because both surface Ab03 and near-surface $SiO_2$ layers suppressed further oxidation. XRD, GDOES, XPS, and scratch tests were performed.

• 한국세라믹학회지
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• 제36권8호
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• pp.863-870
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• 1999

SOI(silicon on insulafor) was fabricated through the direct bonding using (100) Si wafer and 4$^{\circ}$off (100) Si wafer to investigate the stacking faults in silicon at the Si/SiO2 oxidized and bonded interface. The treatment time of wafer surface using MSC-1 solution was varied in order to observe the effect of cleaning on bonding characteristics. As the MSC-1 treating time increased surface hydrophilicity was saturated and surface microroughness increased. A comparison of surface hydrophilicity and microroughness with MSC-1 treating time indicates that optimum surface modified condition for time was immersed in MSC-1 for 2 min. The SOI structure directly bonded using (100) Si wafer and 4$^{\circ}$off (100) Si wafer at the room temperature were annealed at 110$0^{\circ}C$ for 30 min. Then the stacking faults at the bonding and oxidation interface were examined after the debonding. The results show that there were anomalies in the gettering of the stacking faults at the bonded region.

• 한국정밀공학회지
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• 제26권9호
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• pp.58-63
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• 2009

Silicon carbide (SiC) has been used for many engineering applications because of their high strength at high temperatures and high resistances to chemical degradation. SiC is very useful especially for a glass lens mold whose components demanded to the machining with good surface finish and low surface damage. The performance and reliability of optical components are strongly influenced by the surface damage of SiC during grinding process. Therefore, the severe process condition optimization shall be necessary for the highly qualified SiC glass lens mold. Usually the major form of damage in grinding of SiC is a crack occurs at surface and subsurface. The energy introduced in the layers close to the surface leads to the formation of these cracks. The experimental studies have been carried out to get optimum conditions for grinding of silicon carbide. To get the required qualified surface finish in grinding of SiC, the selection of type of the wheel is also important. Grinding processes of sintered SiC work-pieces is carried out with varying wheel type, depth of cut and feed using diamond wheel. The machining result of the surface roughness and the number of flaws, have been analyzed by use of surface profilers and SEM.

• 한국진공학회지
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• 제6권2호
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• pp.159-164
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• 1997

X-선 광전자 분광법 (x-ray photoelectron spectroscopy: SPS)과 반사 고에너지 전 자 회절법(reflection high energy electron diffraction: RHEED)을 이용하여 상온과 고온(약 300~$500^{\circ}C$)에서 알칼리금속(AM)/Si(111)7$\times$7표면에 1 monolayer(ML)의 AM을 흡착시키면 Si(111)7$\times$7표면에 비해 산소의 초기 부착 계수(initial sticking coefficient)와 산소의 포화량 은 증가하지 않았다. Si(111)7$\times$7-AM표면에 산소의 주입량을 증가시키면서 측정한 O ls 스 펙트럼으로부터 AM이 흡착된 Si(111)7$\times$7표면에 흡착되는 산소원자는 Si-O, AM-O 두 종 류의 결합형태를 가지는 것으로 생각되며 이중에서 AM-O 결합의 산화과정상에서의 역할 에 대하여 논의하였다. 상온과는 달리 고온에서는, Si(111)3$\times$1-AM표면으로 구조가 변화하 면서 산소의 흡착이 급격히 떨어지는 것을 관측할 수 있었다. 이때 3$\times$1-AM표면을 형성시 키는 AM종류의 산화에 대한 의존성을 살펴보았다.

• 한국표면공학회지
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• 제40권2호
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• pp.63-69
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• 2007

Ni-SiC composite coating layers were formed using two kinds of SiC nano-particles by DC electrodeposition in a nickel sulfamate bath containing SiC particles. The effect of stirring rate and SiC particle type on the microstructure and properties of Ni-SiC composite coating layers were investigated. Results revealed that the trend of deposition rate is closely related to the codeposition of SiC and the deposition rate. or nickel, and the codeposition behavior of SiC can be explained by using hydrodynamic effect due to stirring. The average roughness and friction coefficient are closely related to the codeposition of SiC and SiC particle size. It was found that the Victors microhardness of the composite coating layers increased with increasing codeposition of SiC. The composite coating layers containing smaller SiC particle showed higher hardness. This can be explained by using the strengthening mechanism resulting from dispersion hardening. Anti-wear property of the composite coating layers formed using 130 nm-sized SiC nano-particles has been improved by 2,300% compared with pure electroplated-nickel layer.