• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1243-1245
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• 1994

SiN films were deposited in $Si_2H_6$(99.9%), $NH_3$(99.99%) gas mixture with carrier gas $N_2$ on Si substrate by ArF Excimer Laser CVD. SiN film deposition conditions that are substrate temperature and Laser average power were varied in order to investigate the dependence of SiN film on the condition. A post-deposition anneal was performed to examine variation of fixed charge density in the films. The deposition rate was increased as the substrate temperature and Laser power were increased during film deposition. The refractive index was increased with increasing substrate temperature, but it didn't have the dependence on Laser power. The fixed charge density was decreased when a post-deposition anneal was performed.

• 한국세라믹학회지
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• 제44권11호
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• pp.645-649
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• 2007

The $La_{0.7}Sr_{0.3}MnO_3$ was deposited on $SiO_2/Si$ substrate by RF magnetron sputtering. The oxygen gas flow rate was changed from 0 to 80 sccm and the substrate temperature was $350^{\circ}C$. The oxygen gas flow rate was changed to control the growth orientation and crystalline state of the film. Relatively high TCR (temperature coefficient of resistance) value (-2.33%/K) was obtained when comparing with the reported values of the films prepared by using high substrate anneal temperature. The decrease in the sheet resistance and TCR value were observed when grain size of the film increased with the increase of oxygen gas flow rate.

• 대한금속재료학회지
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• 제46권3호
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• pp.159-168
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• 2008

Thermally-evaporated 10 nm-Ni/1 nm-Ru/(30 nm or 70 nm-poly)Si structures were fabricated in order to investigate the thermal stability of Ru-inserted nickel monosilicide. The silicide samples underwent rapid thermal anne aling at $300{\sim}1,100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process were formed on the top of the single crystal and polycrystalline silicon substrates mimicking actives and gates. The sheet resistance was measured using a four-point probe. High resolution X-ray diffraction and Auger depth profiling were used for phase and chemical composition analysis, respectively. Transmission electron microscope and scanning probe microscope(SPM) were used to determine the cross-sectional structure and surface roughness. The silicide, which formed on single crystal silicon and 30 nm polysilicon substrate, could defer the transformation of $Ni_2Si $i and $NiSi_2 $, and was stable at temperatures up to $1,100^{\circ}C$ and $1,100^{\circ}C$, respectively. Regarding microstructure, the nano-size NiSi preferred phase was observed on single crystalline Si substrate, and agglomerate phase was shown on 30 nm-thick polycrystalline Si substrate, respectively. The silicide, formed on 70 nm polysilicon substrate, showed high resistance at temperatures >$700^{\circ}C$ caused by mixed microstructure. Through SPM analysis, we confirmed that the surface roughness increased abruptly on single crystal Si substrate while not changed on polycrystalline substrate. The Ru-inserted nickel monosilicide could maintain a low resistance in wide temperature range and is considered suitable for the nano-thick silicide process.

• ETRI Journal
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• 제25권2호
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• pp.65-72
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• 2003

To achieve cost and size reductions, we developed a low cost manufacturing technology for RF substrates and a high performance passive process technology for RF integrated passive devices (IPDs). The fabricated substrate is a conventional 6" Si wafer with a 25${\mu}m$ thick $SiO_2$ surface. This substrate showed a very good insertion loss of 0.03 dB/mm at 4 GHz, including the conductive metal loss, with a 50 ${\Omega}$ coplanar transmission line (W=50${\mu}m$, G=20${\mu}m$). Using benzo cyclo butene (BCB) interlayers and a 10 ${\mu}m$ Cu plating process, we made high Q rectangular and circular spiral inductors on Si that had record maximum quality factors of more than 100. The fabricated inductor library showed a maximum quality factor range of 30-120, depending on geometrical parameters and inductance values of 0.35-35 nH. We also fabricated small RF IPDs on a thick oxide Si substrate for use in handheld phone applications, such as antenna switch modules or front end modules, and high-speed wireless LAN applications. The chip sizes of the wafer-level-packaged RF IPDs and wire-bondable RF IPDs were 1.0-1.5$mm^2$ and 0.8-1.0$mm^2$, respectively. They showed very good insertion loss and RF performances. These substrate and passive process technologies will be widely utilized in hand-held RF modules and systems requiring low cost solutions and strict volumetric efficiencies.

• 한국결정성장학회지
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• 제4권1호
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• pp.92-99
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• 1994

마이크로웨이브 화학 기상 중착법을 이용하여 n 형 Si(100) 기팡위에 다이아몬드 박막을 증착하였다. 다이아몬드의 핵생성 밀도를 향상시키기 위하여 Si 기판을 다이아몬드 분말로 전처리 하거나 negative bias를 인가하여 다이아몬드 박막을 증착하였다. 전처리한 기판에서는 다이아몬드의 순수도가 전체압력이 증가함에 따라 (20~150 Torr)향상되었으며 bias 인가시에는$CH_4$ 농도와 전체압력에 따라 다이아몬드의 생성유무가 결정되었다.플라즈마의 이온에 의해 가판위에 생성되는 전류를 $CH_4$ 농도, bias 전압, 그리고 전체압력에 따라 측정하였으며 그 결과를 다이아몬드 박막의 생성 조건과 관련시켜 검토 하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.634-638
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• 2003

We reported the a-Si crystallization using a XeCl excimer laser annealing on the plastic substrate. The poly-Si film is able to grow in the low temperature and light substrate like a plastic. For the preparation of sample, substrate is cleaned by organic liquids. The film of $CeO_{2}$ layer as the buffer layer was grown by sputtering methods. After a-Si film deposition using ICPCVD, the film was crystallized by XeCl excimer laser. In this paper, we present the crystallization properties of a-Si on the plastic substrate

• 한국결정성장학회지
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• 제7권1호
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• pp.59-69
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• 1997

이트리움 실리사이드($YSi_2$)는 $400^{\circ}C$ 이상의 진공열처리 중 고상반응에 의하여 (100)Si 기판상에서 $YSi_2$의 (1100)면이 방향성 성장을 하였으며, $YSi_2$ 박막과 (100)Si 기판과의 방위관계는 [0001]$YSi_2$//[011i]Si과 [0001]$YSi_2$//[011]Si이었다. 그러나 방위관계에서도 알 수 있는 바와 같이 $YSi_2$는 [1100]$YSi_2$의 domain이 상호간에 $90^{\circ}$의 방위각을 이루며 성장하는 이른바 double-domain 구조를 나타내었다. 이는(1100)$YSi_2$면과 Si기판과의 계면에서 커다란 격자 불일치의 이방성 때문이라 생각되며, 각각의 domain은 (2201) 비대칭 반사면의 $\omega$-mode rocking curve 측정 결과, 거의 동등한 체적율과 결정성을 나타내었다. 본 연구에서는 이러한 double-domain의 형성기구를 (1100)$YSi_2$면과 (100)Si기판과의 계면에서 정합 모델에 근거한 기하학적 matching 관계로 설명하였다.

• 한국재료학회지
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• 제23권1호
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• pp.47-52
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• 2013

Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.

• 한국세라믹학회지
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• 제36권1호
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• pp.21-29
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• 1999

흑연 기판에 탄화규소 전환층을 형성하는데 있어서 기판의 밀도와 기공 크기 분포의 영향이 조사되었다. 전환층형성을 위한 화학 반응은 기판의 표면 또는 표면 하부에서 SiO 기체의 침투를 통해 이루어졌다. 전환 공정 동안 기판 표면에서의 충분한 양의 SiO 기체 침투 및 연속적인 화학반응에 요구되는 기공크기 분포는 1.0~10.0$\mu\textrm{m}$ 범위인 것으로 추정되엇다. 유한요소법에 의한 탄화규소 층의 응력 해석에서는 열적 불일치에 기인하는 잔류응력 분포를 나타냈다. 그러나. X-선 회절에 의해 탄화규소 층에서는 압축응력이 측정되었으며, 탄화규소 층에서의 잔류응력 분포에 대해 SiC 층과 흑연 기판간의 interlayer의 constraining 효과, 전환층의 치밀화 거동 및 입자성장에 의해 주로 영향받는 것으로 추정되었다.

• 대한금속재료학회지
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• 제49권4호
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• pp.321-328
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• 2011

The 30 nm-thick Ni layers was deposited on a flexible polyimide substrate with an e-beam evaporation. Subsequently, we deposited a Si layer using a catalytic CVD (Cat-CVD) in a hydride amorphous silicon (${\alpha}$-Si:H) process of $T_{s}=180^{\circ}C$ with varying thicknesses of 55, 75, 145, and 220 nm. The sheet resistance, phase, degree of the crystallization, microstructure, composition, and surface roughness were measured by a four-point probe, HRXRD, micro-Raman spectroscopy, FE-SEM, TEM, AES, and SPM. We confirmed that our newly proposed Cat-CVD process simultaneously formed both NiSi and crystallized Si without additional annealing. The NiSi showed low sheet resistance of < $13{\Omega}$□, while carbon (C) diffused from the substrate led the resistance fluctuation with silicon deposition thickness. HRXRD and micro-Raman analysis also supported the existence of NiSi and crystallized (>66%) Si layers. TEM analysis showed uniform NiSi and silicon layers, and the thickness of the NiSi increased as Si deposition time increased. Based on the AES depth profiling, we confirmed that the carbon from the polyimide substrate diffused into the NiSi and Si layers during the Cat-CVD, which caused a pile-up of C at the interface. This carbon diffusion might lessen NiSi formation and increase the resistance of the NiSi.