• Journal of the Microelectronics and Packaging Society
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• v.19 no.4
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• pp.19-23
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• 2012

Silicon substrate for light emitting diodes (LEDs) has been the tendency of LED packaging for improving power consumption and light output. In this study, a low cost and high throughput Si through via fabrication has been demonstrated using a wet etching process. Both a wet etching only process and a combination of wet etching and dry etching process were evaluated. The silicon substrate with Si through via fabricated by KOH wet etching showed a good electrical resistance (${\sim}5.5{\Omega}$) of Cu interconnection and a suitable thermal resistance (4 K/W) compared to AlN ceramic substrate.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.517-522
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• 2002

In this study, the effect of the processing parameters in PVD process on the size and the distribution of deposited Si quantum dots was quantitatively investigated by computational simulation utilizing Monte Carlo method. The processing parameters, substrate temperature, deposition time, gas pressure and target-substrate distance were selected as variables since those parameters are often selected as variables in PVD experiments. It is predicted that the density of $1{\times}10^{12}cm^{-2}$ Si quantum dots can be deposited on the substrate when the deposition rate is 0.05 nm/sec at the substrate temperature of 490${\circ}$, deposition time of 7 sec, gas pressure of 3 mTorr and target-substrate distance of 8 cm.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.90-95
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• 2000

The substrate for pyroelectric IR sensor which has orientation similar to MgO single crystal was fabricated by depositing the MgO thin film on $Si_3N_4/SiO_2/Si_3N_4$/Si. The MgO thin film was deposited by RF magnetron sputtering. The c-axis orientation of PLT thin film deposited on Pt/MgO(100)/$Si_3N_4/SiO_2/Si_3N_4$/Si substrate was investigated. The MgO thin film deposited at $500^{\circ}C$ at a gas pressure of 30 mTorr with RF power of 160 W exhibited a good a-axis orientation. The PLT thin films deposited on these substrates also exhibited c-axis orientation similar to the PLT thin films deposited on MgO single crystal substrate.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.58-63
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• 1995

The effects of substrate temperature, RF power, and $NH_{3}/SiH_{4}$ gas flow ratio on the dielectric constant and optical bandgap of amorphous silicon nitride (a-SiNx:H) thin films prepared by PECVD method using RF glow discharge decomposition of $SiH_{4}$ and $NH_{3}$ gas mixtures have been studied. The dielectric constant and optical bandgap of a-SiNx:H thin films were greatly exchanged as by increasing substrate temperature, RF power, and $NH_{3}/SiH_{4}$ gas flow ratio. The dielectric constant of a-SiNx:H films was increased and optical bandgap of a-SiNx:H films was decreased as the substrate temperature was increased. When the substrate temperature, RF power, gas pressure, $NH_{3}/SiH_{4}$ gas flow ratio, and thickness were $250^{\circ}C$, 20 W, 500 mTorr, 10 and $1500\;{\AA}$, respectively, the dielectric constant, breakdown field and optical bandgap of a-SiNx:H film were 4.3, 1 MV/cm, and 2.9 eV, respectively.

• Journal of the Korean institute of surface engineering
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• v.46 no.4
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• pp.145-152
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• 2013

The growth behavior of nanocrystalline diamond (NCD) film has been studied for three different substrates, i.e. bare Si wafer, 1 ${\mu}m$ thick W and Ti films deposited on Si wafer by DC sputter. The surface roughness values of the substrates measured by AFM were Si < W < Ti. After ultrasonic seeding treatment using nanometer sized diamond powder, surface roughness remained as Si < W < Ti. The contact angles of the substrates were Si ($56^{\circ}$) > W ($31^{\circ}$) > Ti ($0^{\circ}$). During deposition in the microwave plasma CVD system, NCD particles were formed and evolved to film. For the first 0.5h, the values of NCD particle density were measured as Si < W < Ti. Since the energy barrier for heterogeneous nucleation is proportional to the contact angle of the substrate, the initial nucleus or particle densities are believed to be Si < W < Ti. Meanwhile, the NCD growth rate up to 2 h was W > Si > Ti. In the case of W substrate, NCD particles were coalesced and evolved to the film in the short time of 0.5 h, which could be attributed to the fact that the diffusion of carbon species on W substrate was fast. The slower diffusion of carbon on Si substrate is believed to be the reason for slower film growth than on W substrate. The surface of Ti substrate was observed as a vertically aligned needle shape. The NCD particle formed on the top of a Ti needle should be coalesced with the particle on the nearby needle by carbon diffusion. In this case, the diffusion length is longer than that of Si or W substrate which shows a relatively flat surface. This results in a slow growth rate of NCD on Ti substrate. As deposition time is prolonged, NCD particles grow with carbon species attached from the plasma and coalesce with nearby particles, leaving many voids in NCD/Ti interface. The low adhesion of NCD films on Ti substrate is related to the void structure of NCD/Ti interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.5-11
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• 2008

To study the effects of $H_2$ gas on AIN insulation thin film, we prepared AIN thin film on Si and GaAs substrate by means of reactive sputtering method using $H_2$ gas as an additives, With treatment conditions of $H_2$ gas AIN thin film shows variable electrical properties such as its crystallization and hysterisis affected to electrical property, As a results, AIN thin film fabricated on Si substrate post-treated with $H_2$ gas for 20 minutes shows much better an insulation property than that of pre-treated, And AIN film treated with $H_2$ gas comparing to non-treated AIN film shows a flat band voltage decreasment. But In GaAs substrate $H_2$ gas does not effect on the flat band voltage.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.690-693
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• 2003

An Si substrate (100) was oxidized at $400^{\circ}C$ in inductively coupled oxygen plasma. Interstitial oxygen was found in the Si substrate at the initial stage of oxidation by IR measurements. An x-ray rocking curve of Si substrates showed a lower peak intensity due to lattice distortion by the interstitial oxygen. The refractive index of thin oxides, below which interstitial oxygen existed in the Si substrate, was smaller than the refractive index of thick oxides, below which no interstitial oxygen existed. The interstitial oxygen was found by plasma oxidation using $O_{2}$ gas and $N_{2}O$ gas. The inductively coupled plasma oxidation using $N_{2}O$ gas was performed by atomic oxygen, not by molecular oxygen, indicating that atomic oxygen in plasma is responsible for the incorporation of interstitial oxygen.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.215-219
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• 2007

In this work, the indium zinc oxide (IZO) films had been deposited on the glass substrate coated with the SiO film. Based on a comparative investigation of the IZO monolayer and IZO/SiO multilayer, it is shown that the thickness of SiO film has a great effect on the mechanical properties of the thin films. The AFM images of the IZO thin film included the SiO film were shown smoother surfaces than monolayer. Resistivity was in inverse proportion to Mobility. If it deposited the SiO film on the substrate, the layer of change was generated between two layer(SiO and substrate). The layer of change influenced resistance because of oxygen content was more than the IZO monolayer.

• Korean Journal of Materials Research
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• v.16 no.1
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• pp.30-36
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• 2006

A novel method was proposed to grow an epitaxial $CoSi_2$ on (100)Si substrate. A $CoN_x$ interlayer was deposited by reactive sputtering of Co in an Ar+$N_2$ flow. From the Ti/Co/$CoN_x$/Si structure, a uniform and thin $CoSi_2$ layer was epitaxially grown on (100)Si by annealing above $700^{\circ}C$. Two amorphous layers were found at the $CoN_x$/Si interface, where the top layer has a silicon nitride (Si-N) bonding state with some Co content and the bottom layer has a Co-Si intermixing state. The SiNx amorphous layer seems to play a critical role of suppressing the diffusion of Co into Si substrate for the direct formation of epitaxial $CoSi_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta$$\theta$$_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 2000e. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.t also seed layer.r.