• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.101-101
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• 2007

We fabricated floating gate non-volatile memory devices with Si nanocrystals embedded in $SiN_x$ layer to achieve higher trap density. The average size of Si nanocrystals embedded in $SiN_x$ layer was ranging from 3 nm to 5 nm. The MOS capacitor and MOSFET devices with Si nanocrystals embedded in $SiN_x$ layer were analyzed the charging effects as a function of Si nanocrystals size.

• Bulletin of the Korean Chemical Society
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• 제25권4호
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• pp.525-528
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• 2004

The photoluminescence (PL) emission of Si nanocrystals synthesized by 400 keV Si ion implanted in $SiO_2$ is studied as a function of ion dose and annealing time. The formation of nanocrystals at around 600 nm from the surface was confirmed by RBS and HRTEM, and the Si nanocrystals showed a wide and very intense PL emission at 700-900 nm. The intensity of this emission showed a typical behaviour with a fast transitory increase to reach a saturation with the annealing time, however, the red shift increased continuously because of the Ostwald ripening. The oversaturation of dose derived a decrease of PL intensity because of the diminishment of quantum confinement. A strong enhancement of PL intensity by H passivation was confirmed also, and the possible mechanism is discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.162-164
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• 2004

Nanocrystalline silicon(nc-Si) thin films on the silicon substrates have been prepared by pulsed laser deposition(PLD). The optical and structural properties of films have been investigated depending on deposition temperature, annealing, and oxidation process. When the deposition temperature increased, photoluminescence(PL) intensity abruptly decreased and peaks showed red shift. Annealing process could reduce the number of defect centers. Oxidation had a considerable effect upon the formation and isolation of the nanocrystals. These results indicate that the formation mechanism of Si nanocrystals grown by PLD can be explained by three steps of growth, passivating defect centers, and isolation, sequentially.

• 한국광학회:학술대회논문집
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• 한국광학회 2008년도 하계학술발표회 논문집
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• pp.411-412
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• 2008

The chromatic dispersion of the germano-silicate optical fiber incorporated with Si nanocrystals was determined with the aid of simulation and demonstrated using experiments, which showed dependence of the launched power and the pump wavelength due to optical nonlinearity of the fiber.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.64.2-65
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• 2003

A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{＋}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{＋}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

• 한국진공학회지
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• 제10권1호
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• pp.44-50
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• 2001

전자빔증착법과 이온빔의 도움을 받는 전자빔 증착법(ion beam assisted electron beam deposition; IBAED)법으로 비정질 Si(-200nm) 박막을 p-Si 기판위에 성장하고 이 두 구조를 급속열처리산화(Rapid Thermal Oxidation; RTO)를 시킴으로서 $SiO_2$/나노결정 Si(nanocrystal Si)/p-Si구조를 형성하였다. 그 후 시료 위에 Au 막을 증착함으로서 최종적으로 나노결정이 함유된 MOS(metal-oxide-semiconductor)구조를 완성하였다. 이 MOS구조내의 나노결정 Si의 전하충전 특성을 바이어스 sweep 비율을 변화시키면서 Capacitance-Voltage(C-V) 특성을 측정하여 조사하였다. 전자빔증착시료의 경우에는 $\DeltaV_{FB}$(flatband voltage shift)가 1V 미만의 작은 C-V 이력곡선이 관측된 반면 IBAED 시료의 경우는 $\DeltaV_{FB}$가 22V(2V/s Voltage Sweep비율) 이상인 대단히 큰 C-V 이력곡선이 관측되었다. 전자빔증착중 Ar ion beam을 조사하면 표면 흡착원자이동이 활성화되고 따라서 비정질 Si내에 Si의 핵 생성율이 증가하여 후속 급속열처리산화공정중 이 높은 농도의 핵들이 나노결정 Si으로 자라나게 되고 이렇게 형성된 높은 농도의 나노결정의 전하 충전 및 방전현상이 큰 이력곡선을 나타내는 원인이라고 생각된다. 따라서 IBAED 방법이 고농도의 나노결정 Si을 형성시키는데 유용한 방법이라고 판단된다.

• 센서학회지
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• 제11권3호
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• pp.183-190
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• 2002

실리콘 기판 위에 형성한 열산화막에 실리콘이온을 주입하고 열처리를 수행한 후, 광루미네센스(photoluminescence:PL) 스펙트럼을 조사하였다. 실리콘 이온도즈의 변화와 열처리 온도의 변화에 따른 PL스펙트럼을 조사하고, 이를 TEM과 XRD 데이터와 비교하여 분석한 결과, 광루미네센스 특성은 산화막내의 실리콘 나노결정으로부터 기인함을 알 수 있었다. 또 산화막을 1분 간격으로 습식 식각하면서 매 식각 시마다 PL스펙트럼을 관측하여 그 변화를 조사하였다. 이러한 실험을 통하여 산화막내에 분포하고 있는 실리콘 나노결정의 크기와 그 수가 PL피크 파장과 강도에 직접적으로 영향을 줌을 알 수 있었다.

• 한국재료학회지
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• 제17권4호
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• pp.222-226
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• 2007

[ $SiO_2$ ]thin films containing Si-nanocrystals and $Er^{3+}$ were fabricated by the RF-sputtering method. Intense emission of $Er^{3+}$ was observed at 1530 nm region after the annealing of the film at $1050^{circ}C$ for 5 min. Channel waveguides were fabricated using such films for the core. The films containing Si higher than 2.4 at% exhibited the change in stress from compression to tension after annealing, which induced the fatal loss-increase in waveguide. The optical gain might be attained by the Er-doped waveguide with Si lower than 2.4 at% by a visible-light-excitation.

• 한국분말재료학회지
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• 제19권5호
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• pp.362-366
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• 2012

We report the effect of the chain length of carboxylic acid on the photoluminescence(PL) of $CuInS_2$/ZnS nanocrystals. $CuInS_2$/ZnS nanocrystals with emission wavelength ranging from 566 nm through 583 nm were synthesized with zinc acetate and carboxylic acids with various chain length. In this study, $CuInS_2$/ZnS nanocrystals prepared using long chain carboxylic acid showed more improved PL intensity. The origin of strong photoluminescence of the nanocrystals prepared with zinc acetate and long chain carboxylic acid was ascribed to improved size distribution due to strong reactivity between long chain carboxylic acid and zinc acetate.

• 대한금속재료학회지
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• 제49권11호
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• pp.900-904
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• 2011

We have synthesized core-shell structured nanocrystals based on chalcopyrite-type $Cu_{0.2}InS_2$. The photoluminescence of the nanocrystals shows a significant blueshift in the emission wavelength by shell capping with ZnS layers. This shift can be explained with the compressive stress to core nanocrystals applied by the formation of a ZnS shell layer with a large lattice mismatch with the core. In this study, the emission wavelength could be tuned by changing the composition of the shell layers. Nanocrystals with emission wavelength ranging from 575 nm through 630 nm were synthesized by varying the portion of cadmium compared with zinc in the shell layers.