Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Photoluminescence from silicon nanocrystals in silicon ion implanted SiO2 layers

실리콘 이온주입 SiO2층의 나노결정으로 부터의 광루미네센스

  • Kim, Kwang-Hee (Department of Electronic Engineering, Kyungpook National University) ;
  • Oh, Hang-Seok (Department of Electrical Engineering, Pohang University of Science and Technology) ;
  • Jang, Tae-Su (Department of Electrical Engineering, Pohang University of Science and Technology) ;
  • Kwon, Young-Kyu (Department of Electronics, Uiduk University) ;
  • Lee, Yong-Hyun (Department of Electronic Engineering, Kyungpook National University)
  • 김광희 (경북대학교 전자공학과) ;
  • 오항석 (포항공과대학교 전자전기공학과) ;
  • 장태수 (포항공과대학교 전자전기공학과) ;
  • 권영규 (위덕대학교 전자공학과) ;
  • 이용현 (경북대학교 전자공학과)
  • Published : 2002.05.31
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Abstract

Photoluminescence(PL) properties of $Si^+$-implanted $SiO_2$ film, which was thermally grown on c-Si substrate, is reported. We have compared room temperature photoluminescence (PL) spectra of the samples which was made in several kinds of implantation, subsequent annealing and $SiO_2$ film thickness. XRD data was correlated with the PL spectra. Silicon nanocrystals in $SiO_2$ film is considered as the origin of the photoluminescence. PL spectra was investigated after wet etching of the $SiO_2$ film by using BOE (Buffered Oxide Etchant) at every one minute. PL peak wavelength was varied as the etching is proceeded. These results indicate that the quantity and the distribution of dominant size of Si nanocrystals in $SiO_2$ film seem to have a direct effect on PL spectrum.

실리콘 기판 위에 형성한 열산화막에 실리콘이온을 주입하고 열처리를 수행한 후, 광루미네센스(photoluminescence:PL) 스펙트럼을 조사하였다. 실리콘 이온도즈의 변화와 열처리 온도의 변화에 따른 PL스펙트럼을 조사하고, 이를 TEM과 XRD 데이터와 비교하여 분석한 결과, 광루미네센스 특성은 산화막내의 실리콘 나노결정으로부터 기인함을 알 수 있었다. 또 산화막을 1분 간격으로 습식 식각하면서 매 식각 시마다 PL스펙트럼을 관측하여 그 변화를 조사하였다. 이러한 실험을 통하여 산화막내에 분포하고 있는 실리콘 나노결정의 크기와 그 수가 PL피크 파장과 강도에 직접적으로 영향을 줌을 알 수 있었다.

Keywords

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