• Title/Summary/Keyword: Si membrane structure

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Anisotropic Wet Etching of Single Crystal Silicon for Formation of Membrane Structure (멤브레인 구조 제작은 위한 단결정 실리콘의 이방성 습식 식각)

  • 조남인;강창민
    • Journal of the Semiconductor & Display Technology
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    • v.2 no.4
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    • pp.37-40
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    • 2003
  • We have studied micro-machining technologies to fabricate parts and sensors used in the semiconductor equipment. The studies were based on the silicon integrated circuit processes, and composed of the anisotropic etching of single crystal silicon to fabricate a membrane structure for hot and cold junctions in the infrared absorber. KOH and TMAH were used as etching solutions for the anisotropic wet etching for membrane structure formation. The etching characteristic was observed for the each solution, and etching rate was measured depending upon the temperature and concentration of the etching solution. The different characteristics were observed according to pattern directions and etchant concentration. The pattern was made to incline $45^{\circ}$ on the primary flat, and optimum etching property was obtained in the case of 30 wt% and $90^{\circ}C$ of KOH etching solution for the formation of the membrane structure.

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Design on ultra low power consumption microhotplates based on 3C-SiC for high temperatures (고온용 저전력소비형 3C-SiC 마이크로 히터의 설계)

  • Jeong, Jae-Min;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.385-386
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    • 2008
  • This paper reports the design of the ultra low power consumption microhotplates for high temperatures. The microhotplates consisting of a platinum-based heating element on AlN/poly 3C-SiC layers were designed. The microhotplate is a $600\times600{\mu}m^2$ square shaped membrane made of $1{\mu}m$ thick ploy 3C-SiC suspended by four legs. The microhotplate was compared with $Si_3N_4/SiO_2/Si_3N_4$(NON) structure microhotplate by COMSOL simulation system. Thermal uniformity, power consumption and thermal characterizations of microhotplates based on 3C-SiC thin film are better than microhotplates with NON structure.

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The Fabrication of Micro-Heaters with Low-Power Consumption Using SOI and Trench Structures

  • Chung, Gwiy-Sang;Hong, Seok-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05a
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    • pp.197-201
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    • 2002
  • This paper presents optimized design, fabrication and thermal characteristics of micro-heaters for thermal MEMS (micro electro mechanical system) applications using SOI and trench structures. The micro-heaters are based on a thermal measurement principle and contains thermal isolation regions of 10 ${\mu}m$-thick Si membranes consisting of oxide-filled trenches in the SOI membrane rim. The micro-heaters were fabricated with Pt-RTD on the same substrate via MgO buff layer between Pt thin-film and $SiO_2$ layer. The thermal characteristics of micro-heater with trench-free SOI membrane structure was $280^{\circ}C$ at input power 0.9 W; in the presence of 10 trenches, it was $580^{\circ}C$ due to reduction of the external thermal loss. Therefore, a micro-heater with trenches in SOI membrane rim structure provides a powerful and versatile alternative technology for enhancing the performance of micro-thermal sensors and actuators.

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Fabrication process for micro magnetostrictive sensor using micromachining technique (Micromachining을 이용한 초소형 자왜 센서 제작공정 연구)

  • 김경석;고중규;임승택;박성영;이승윤;안진호
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.1
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    • pp.81-89
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    • 1999
  • The fabrication process for miniaturizing the Electronic Article Surveillance (EAS) sensor was studied using micromachining technique. Two types of sensor structure, free standing membrane type and diving beard type, were proposed and researched for establishing the fabrication process. The membrane type structure was easy to change the sensor shape but had the limitation for miniaturizing, because the size of the sensor depends on the silicon substrate thickness. The diving board type structure has the advantage of miniaturization and of free motion. Since the elastic modulus is not trio high, SiN film is expected to be adequate for the supporting membrane of magnetic sensor. The selectivity of $H_2O_2$for sputtered W with respect to Fe-B-Si, which was studded for magnetic sensor materials, was high enough to be removed after using as a protection layer. Therefore, the diving board type process using the silicon nitride film for the supporter of the sensor material and the sputtered W for protection layer is expected to be useful fur miniaturizing the Electronic Article Surveillance (EAS) sensor.

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Hydrogen Permselective Membrane using the Zirconia Coated Support (지르코니아 코팅 지지체를 이용한 수소분리막)

  • Choi, Ho-Sang;Ryu, Cheol-Hwi;Hwang, Gab-Jin
    • Membrane Journal
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    • v.20 no.3
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    • pp.210-216
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    • 2010
  • The hydrogen permselective membrane were prepared by chemical vapor deposition (CVD) aiming at the applications to hydrogen iodide decomposition in the thermochemical IS process, and it was evaluated for the possibility as a separation membrane. An electron probe X-ray microanalyzer (EPMA) and SEM picture were used to analyze the morphology and structure of the prepared membranes. It was confirmed that Zr-Si-O layer exist in the surface of the prepared membrane using zirconia coated support. Single-component permeance to $H_2$ and $N_2$ were measured at $300{\sim}600^{\circ}C$. Hydrogen permeance through the Z-1 membrane at a permeation temperature of $600^{\circ}C$ was about $1{\times}10^{-7}\;mol{\cdot}Pa^{-1}{\cdot}m^{-2}{\cdot}s^{-1}$. The selectivities of $H_2/N_2$ at $600^{\circ}C$ were 5.0 and 5.75 for Z-1 and Z-2 membrane, respectively.

Characteristics of Surface Micromachined Pyroelectric Infrared Ray Focal Plane Array

  • Ryu, Sang-Ouk;Cho, Seong-Mok;Choi, Kyu-Jeong;Yoon, Sung-Min;Lee, Nam-Yeal;Yu, Byoung-Gon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.1
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    • pp.45-51
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    • 2005
  • We have developed surface micromachined Infrared ray (IR) focal plane array (FPA), in which single $SiO_{2}$ layer works as an IR absorbing plate and $Pb(Zr_{0.3}Ti_{0.7})O_{2}$ thin film served as a thermally sensitive material. There are some advantages of applying $SiO_{2}$ layer as an IR absorbing layer. First of all, the $SiO_{2}$ has good IR absorbance within $8{\sim}12{\mu}m$ spectrum range. Measured value showed about 60% absorbance of incident IR spectrum in the range. $SiO_{2}$ layer has another important merit when applied to the top of Pt/PZT/Pt stack because it works also as a supporting membrane. Consequently, the IR absorbing layer forms one body with membrane structure, which simplifies the whole MEMS process and gives robustness Ito the structure.

In-situ modification of PVC UF membrane by SiO2 sol in the coagulation bath during NIPS process

  • Cheng, Liang;Xu, Zhen-Liang;Yang, Hu;Wei, Yong-Min
    • Membrane and Water Treatment
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    • v.9 no.5
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    • pp.317-325
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    • 2018
  • Polyvinyl chloride (PVC) ultrafiltration (UF) membrane was modified by silica sol in the coagulation bath during non-solvent induced phase separation (NIPS) process. The effects of silica sol concentrations on the morphology, surface property, mechanical strength and separation property of PVC UF membranes were systematically investigated. PVC membranes were characterized by Fourier transform infrared spectroscopy (FTIR), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), contact angle goniometry and tensile strength measurement. The results showed that silica had been successfully assembled on the surface of PVC UF membrane. With the increase of silica sol concentration in the coagulation bath, the morphologies of PVC UF membranes changed from cavity structure to finger-like pore structure and asymmetric cross-section structure. The hydrophilicity and permeability of PVC UF membranes were further evaluated. When silica sol concentration was 20 wt.%, the modified PVC membrane exhibited the highest hydrophilicity with a static contact angle of $36.5^{\circ}$ and permeability of $91.8(L{\cdot}m^{-2}{\cdot}h^{-1})$. The structure of self-assemble silica had significant impact on the surface property, morphology, mechanical strength and resultant separation performance of the PVC membranes.

Fabrication and characteristic of thin-film NTC thermal sensors (박막형 NTC 열형 센서의 제작 및 특성 평가)

  • Yoo, Mi-Na;Lee, Moon-Ho;Yu, Jae-Yong
    • Journal of Sensor Science and Technology
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    • v.15 no.1
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    • pp.65-70
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    • 2006
  • Characteristics of thin-film NTC thermal sensors fabricated by micromachining technology were studied as a function of the thickness of membrane. The overall-structure of thermal sensor has a form of Au/Ti/NTC/$SiO_{X}$/(100)Si. NTC film of $Mn_{1.5}CoNi_{0.5}O_{4}$ with 0.5 mm in thickness was deposited on $SiO_{X}$ layer (1.2 mm) by PLD (pulsed laser deposition) and annealed at 873-1073 K in air for 1 hour. Au(200 nm)/Ti(100 nm) electrode was coated on NTC film by dc sputtering. By the results of microstructure, X-ray and NTC analysis, post-annealed NTC films at 973 K for 1 hour showed the best characteristics as NTC thermal sensing film. In order to reduce the thermal mass and thermal time constant of sensor, the sensing element was built-up on a thin membrane with the thickness of 20-65 mm. Sensors with thin sensing membrane showed the good detecting characteristics.

Light addressable potentiometric penicillin sensor using Ta2O5 sensing membrane (Ta2O5 감지막의 광지시 전위차형 페니실린 센서)

  • Lee, Sun-Young;Jang, Su-Won;Kim, Jae-Ho;Kwon, Dae-Hyuk;Kim, Eung-Soo;Kang, Shin-Won
    • Journal of Sensor Science and Technology
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    • v.15 no.3
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    • pp.192-198
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    • 2006
  • In this study, the light addressable potentiometric sensors (LAPS) with $Si_{3}N_{4}/SiO_{2}/Si$, and $Ta_{2}O_{5}/SiO_{2}/Si$ structures were fabricated. The penicillinsae was immobilized on the devices to hydrolyze the penicillin using self-assembled monolayer (SAM) method. Then response characteristics according to the penicillin concentrations were measured and compared. The measuring system was simplified by using LabVIEW. The pH response characteristics of fabricated devices are 56 mV/pH ($Si_{3}N_{4}$ sensing membrane) and 61 mV/pH ($Ta_{2}O_{5}$ sensing membrane). The sensitivity of sensor by enzyme reaction result of the enzyme reaction were 60 mV/decade and 74 mV/decade for $Si_{3}N_{4}/SiO_{2}/Si$ and $Ta_{2}O_{5}/SiO_{2}/Si$ structure, respectively, in the range of $0.1\;mM{\sim}10\;mM $of the penicillin concentration.

Sensing Properties of Porous Silicon Layer for Organic Vapors (다공질 실리콘의 유기가스 검지 특성)

  • 김성진;이상훈;최복길
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.11
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    • pp.963-968
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    • 2002
  • In this work, porous silicon (PS) layer is investigated as a sensing material to detect organic vapors such as ethanol (called alcohol), methanol, and acetone in low concentrations. To do this, PS sensors were fabricated. They have a membrane structure and comb-type electrodes were used to detect the change of electrical resistance effectively. PS layer on Si substrates was formed by anodization in HF solution of 25%. From fabricated sensors, current-voltage (Ⅰ-Ⅴ) curves were measured for gases evaporated from 0.1 to 0.5% organic solution concentrations at 36$\^{C}$. As the result, all curves showed rectifying behavior due to a diode structure between Si and the PS layer. The conductance of most sensors increased largely at high voltage of 5V, but the built-in potential on the measured Ⅰ-Ⅴ curve was lowered inversely by the adsorption effect of the organic vapors with high dipole moment.