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Characteristics of Surface Micromachined Pyroelectric Infrared Ray Focal Plane Array  

Ryu, Sang-Ouk (Microsystem Group, Basic Research Laboratory, Electronics and Telecommunications Research Institute)
Cho, Seong-Mok (Microsystem Group, Basic Research Laboratory, Electronics and Telecommunications Research Institute)
Choi, Kyu-Jeong (Microsystem Group, Basic Research Laboratory, Electronics and Telecommunications Research Institute)
Yoon, Sung-Min (Microsystem Group, Basic Research Laboratory, Electronics and Telecommunications Research Institute)
Lee, Nam-Yeal (Microsystem Group, Basic Research Laboratory, Electronics and Telecommunications Research Institute)
Yu, Byoung-Gon (Microsystem Group, Basic Research Laboratory, Electronics and Telecommunications Research Institute)
Publication Information
Abstract
We have developed surface micromachined Infrared ray (IR) focal plane array (FPA), in which single $SiO_{2}$ layer works as an IR absorbing plate and $Pb(Zr_{0.3}Ti_{0.7})O_{2}$ thin film served as a thermally sensitive material. There are some advantages of applying $SiO_{2}$ layer as an IR absorbing layer. First of all, the $SiO_{2}$ has good IR absorbance within $8{\sim}12{\mu}m$ spectrum range. Measured value showed about 60% absorbance of incident IR spectrum in the range. $SiO_{2}$ layer has another important merit when applied to the top of Pt/PZT/Pt stack because it works also as a supporting membrane. Consequently, the IR absorbing layer forms one body with membrane structure, which simplifies the whole MEMS process and gives robustness Ito the structure.
Keywords
IR absorption; PZT; ferroelctric thin film; pyroelectric; IR focal plane; MEMS process;
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