• 한국세라믹학회지
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• 제44권4호
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• pp.219-223
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• 2007

The ionic conductivity of $Li_2O-ZrO_2-SiO_2$ glasses has been designed and analyzed on the basis of a mixture design experiment with constraints. Fitted models for the activation energy and the ionic conductivity are as follows: $Q(kJ/moi)=54.8565x_1+144.825x_2+133.846x_3-170.908x_1x_3-334.338x_2x_3$ $log{\sigma}(300K)=-5.00245x_1-1.17876x_2-15.5173x_3+17.4522x_1x_3$. The electrical properties are very sensitive to the ratio of $Li_2O/SiO_2$. The effect of $ZrO_2$ is less than that of this ratio but $ZrO_2$ component attributes to the reduction of the activation energy. The optimal composition for best ionic conduction based on these fitted models is $55Li_2O{\cdot}10ZrO_2{\cdot}35SiO_2$. Its activation energy and ionic conductivity at 300 K are 46.98 kJ/mol and $1.08{\times}10^{-5}{\Omega}^{-1}{\cdot}cm^{-1}$, respectively.

• The Korean Journal of Physiology and Pharmacology
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• 제13권2호
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• pp.115-121
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• 2009

Functional defects in mitochondria are involved in the induction of cell death in cancer cells. We assessed the toxic effect of camptothecin against the human cervical and uterine tumor cell line SiHa with respect to the mitochondria-mediated cell death process, and examined the combined effect of camptothecin and anticancer drugs. Camptothecin caused apoptosis in SiHa cells by inducing mitochondrial membrane permeability changes that lead to the loss of mitochondrial membrane potential, decreased Bcl-2 levels, cytochrome c release, caspase-3 activation, formation of reactive oxygen species and depletion of GSH. Combination of camptothecin with other anticancer drugs (carboplatin, paclitaxel, doxorubicin and mitomycin c) or signaling inhibitors (farnesyltransferase inhibitor and ERK inhibitor) did not enhance the camptothecin-induced cell death and caspase-3 activation. These results suggest that camptothecin may cause cell death in SiHa cells by inducing changes in mitochondrial membrane permeability, which leads to cytochrome c release and activation of caspase-3. This effect is also associated with increased formation of reactive oxygen species and depletion of GSH. Combination with other anticancer drugs (or signaling inhibitors) does not appear to increase the anti-tumor effect of camptothecin against SiHa cells, but rather may reduce it. Combination of camptothecin with other anticancer drugs does not seem to provide a benefit in the treatment of cervical and uterine cancer compared with camptothecin monotherapy.

• 한국세라믹학회지
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• 제26권2호
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• pp.195-200
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• 1989

The Silica-Carbon mixture was made with addition of carbon black in the composition which monodispersed spherical fine silica was formed by the hydrolysis of ethylsilicate, mole ratio of Carbon/Alkoxide was 3.1 and $\beta$-SiC powder was synthesized by reacting this mixture at 1,350~1,50$0^{\circ}C$ in Ar atmosphere. The results of this study are as follow : (1) The purity of synthesized $\beta$-SiC powder was above 99.98% and it was in cubic modification with lattice constant of 4.3476$\AA$. (2) The rate-controlling steps varied with the reaction temperature for the syntehsis of $\beta$-SiC in this study ; nucleation and growth of $\beta$-SiC at 1,350~1,40$0^{\circ}C$, interfacial reaction at 1,45$0^{\circ}C$ and diffusion described by Jander Equation at 1,50$0^{\circ}C$. (3) When the rate-determining step was nucleation and growth, the activation energy was about 87.8kcal/mol.

• 한국결정성장학회지
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• 제8권2호
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• pp.332-341
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• 1998

${\alpha}-Al_2O_3$와 비정질 SiO2부터 Mullite를 합성하기 위한 고체상태반응의 반응속도를 1450~$1480^{\circ}C$ 온도 범위에서 연구하였다. 반응속도는 $Al_2O_3$분말을 코팅한 28.16wt%의 $SiO_2$와 일정한 온도에서 여러 시간동안 가열하여 생성된 혼합물에 의하여 결정되었다. MgO안의 반응물과 미반응물의 양은 X-선 회절분석에 의하여 결정되었다. Mullite의 부피율과 peak intensity 비의 자료로부터 $Al_2O_3$와 $SiO_2$의 $3Al_2O_3\;{\cdot}\;2SiO_2$형태로의 반응은 $1450^{\circ}C$와 $1480^{\circ}C$ 사이에서 시작되었다. 고체상태반응 활성화 에너지는 Arrhenius 식에 의하여 결정되었다. 활성화 에너지는 31.9KJ/mol이다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.310-313
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• 2005

CW laser dopant activation (CLDA) is suggested as an alternative to conventional thermal annealing. The sheet resistance of the ion doped poly-Si after CLDA is sufficiently low compared to the value measured after thermal annealing. The surface damage due to ion doping on the poly-Si can be recovered while CW laser scan for dopant activation. Therefore, the CLDA can be applied to LTPS processing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.232-233
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• 2008

The 4H-SiC schottky diodes treated by the various dry etch methods were fabricated and electrically characterized. The post etch process including an Inductively Coupled Plasma(ICP) etch and a Neutron Beam Etch(NBE) was performed after a high-temperature activation annealing without graphite cap in order to eliminate the damaged surface generated during the activation annealing. The reverse leakage current of diode treated by ICP was 1/35 times lower than that of the diode without any post etch at the anode bias of -100V, while the reverse leakage current of diode treated by NBE was 1/44 times lower at the same bias.

• 대한방사선기술학회지:방사선기술과학
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• 제20권1호
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• pp.65-69
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• 1997

[ $Mg_2SiO_4(La.Ho)$ ] thermoluminescent phosphor was made by putting the $MgCl_2.6H_2O$ and $SiO_2$ and by doping the rare earth element of $LaCl_3.7H_2O$ and $HoCl_3$. The heating rate is $10^{\circ}C/sec$ for the thermoluminescent phosphor. Two peaks are found in the measured $Mg_2SiO_4(La.Ho)$ Tl glow curve at $152^{\circ}C$ and $205^{\circ}C$ when the heating rate is $5^{\circ}C/sec$. The peak value at $205^{\circ}C$ is the most sensitive to X-ray among the glow peaks. The activation energy of the main peak has been estimated by the peak shape method. The estimated activation energies for Ho and La are $0.52{\sim}1.77\;eV$ respectively.

• 한국세라믹학회지
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• 제37권1호
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• pp.50-56
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• 2000

Precursor gels with the composition of xZrO2·(100-x)SiO2 systems (x=10, 20 and 30 mol%) were prepared by the sol-gel method. Kinetic parameters, such as activation energy, Avrami's exponent, n, and dimensionality crystal growth value, m, have been simultaneously calculated from the DTA data using Kissinger and Matusita equations. The crystallite size dependence of tetragonal to monoclinic transformation of ZrO2 was investigated using XRD, in relation to the fracture toughness. The crystallization of tetragonal ZrO2 occurred through 3-dimensional diffusiion controlled growth(n=m=2) and the activation energy for crystallization was calculated using Kissinger and Matusita equations, as about 310∼325±10kJ/mol. The growth of t-ZrO2, in proportion to the cube of radius, increased with increasing heating temperature and hteat-treatment time. It was suggested that the diffusion of Zr4+ ions by Ostwald ripening was rate-limiting process for thegrowth of t-ZrO2 crystallite size. The fracture toughness of xZrO2·(100-x)SiO2 systems glass ceramics increased with increasing crystallite size of t-ZrO2. The fracture toughness of 30ZrO2·70SiO2 system glass ceramics heated at 1,100℃ for 5h was 4.84 MPam1/2 at a critical crystaliite size of 40 nm.

• 한국광물학회지
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• 제18권4호통권46호
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• pp.237-248
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• 2005

[ $Mg_{2}SiO_{4}{-}$ ]스피넬에서 올리빈으로의 역상변이에 대한 고온 X-선 회절실험 결과, 진공상태에서 가열하였을 때 상변이가 일어나며, 일정한 온도에서 스피넬상으로부터 올리빈상이 시간이 경과하면서 성장하는 것으로 보아 상변이 메커니즘은 '핵생성 및 성장' 형태인 것으로 판단된다. 스피넬 상으로부터 올리빈 상으로 역상변이 할 때의 활성화 에너지를 구하기 위해 $Mg_{2}SiO_{4}{-}$스피넬 시료에 대한 상변이 실험을 진공 및 고온($1023\∼1116\;k$)에서 시행하였다. 올리빈 상에 대해 '주어진 시간에 따른 비분율법'을 이용하여 활성화 에너지 값을 결정하였다. 아브라미 방정식을 이용하여 계산한 결과, n값은 대체로 온도가 증가함에 따라 매우 넓은 영역에서 동반 상승하는데, 이러한 현상은 '핵생성 및 성장' 메커니즘이 아마도 온도에 종속적이지 않느냐 하는 것을 제시해주고 있다. 상대적으로 낮은 온도에서는 $Mg_{2}SiO_{4}{-}$스피넬은 핵이 생성된 자리가 포화된 후, 새로운 결정상이 표면에서 성장을 시작하고 시간이 지남에 따라 내부 쪽으로 옮아가는 것으로 판단된다. 그러나 고온에서, 성장은 핵이 생성된 자리가 포화되고 난 후 표면뿐만 아니라, 내부에서도 동시에 시작되는 것으로 보인다.

• Transactions on Electrical and Electronic Materials
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• 제15권6호
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• pp.328-332
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• 2014

Thin film transistors (TFTs) with an amorphous silicon zinc tin oxide (a-2SZTO) channel layer have been fabricated using an RF magnetron sputtering system. The effect of the change of excitation electron on the variation of the total interfacial trap states of a-2SZTO systems was investigated depending on sputtering power, since the interfacial state could be changed by changing sputtering power. It is well known that Si can effectively reduce the generation of the oxygen vacancies. However, The a-2SZTO systems of ZTO doped with 2 wt% Si could be degraded because the Si peripheral electron belonging to a p-orbital affects the amorphous zinc tin oxide (a-ZTO) TFTs of the s-orbital overlap structure. We fabricated amorphous 2 wt% Si-doped ZnSnO (a-2SZTO) TFTs using an RF magnetron sputtering system. The a-2SZTO TFTs show an improvement of the electrical property with increasing power. The a-2SZTO TFTs fabricated at a power of 30 W showed many of the total interfacial trap states. The a-2SZTO TFTs at a power of 30 W showed poor electrical property. However, at 50 W power, the total interfacial trap states showed improvement. In addition, the improved total interfacial states affected the thermal stress of a-2SZTO TFTs. Therefore, a-2SZTO TFTs fabricated at 50 W power showed a relatively small shift of threshold voltage. Similarly, the activation energy of a-2SZTO TFTs fabricated at 50 W power exhibits a relatively large falling rate (0.0475 eV/V) with a relatively high activation energy, which means that the a-2SZTO TFTs fabricated at 50 W power has a relatively lower trap density than other power cases. As a result, the electrical characteristics of a-2SZTO TFTs fabricated at a sputtering power of 50 W are enhanced. The TFTs fabricated by rf sputter should be carefully optimized to provide better stability for a-2SZTO in terms of the sputtering power, which is closely related to the interfacial trap states.