• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.1
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• pp.111-116
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• 2006

In this paper, the image sensor using the a-Si:H TFT is proposed. The optimum amorphous silicon thin film is deposited using plasma enhanced chemical vapor deposition (PECVD). TFT and photodiode both with the thin film are fabricated and form image sensor. The photodiode shows that Idark is $10^{-12}A$, Iphoto is $10^{-9}A$ and Iphoto/Idark is $10^3$, respectively. In the case of a-Si:H TFT, it indicates that Ion/Ioff is $10^6$, the drain current is a few ${\mu}A$ and Vth is $2\~4$ volts. For the analysis on the fabricated image sensor, the reverse bias of -5 voltage in ITO of photodiode and $70{\mu}sec$ pulse in the gate of TFT are applied. The image sensor with good property was conformed through the measured photo/dark current.

• Journal of Sensor Science and Technology
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• v.26 no.6
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• pp.438-444
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• 2017

In this paper, we focus on optimization of the in-situ phosphorous (P) doping of low-pressure chemical vapor deposited (LPCVD) poly Si resistors for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $600^{\circ}C$. The deposited poly Si films were annealed by rapid thermal anneal (RTA) process at the temperature range from 900 to $1000^{\circ}C$ for 90s in nitrogen ambient to relieve intrinsic stress and decrease the TCR in the poly Si layer and get the Ohmic contact. After the RTA process, a roughness of the thin film was slightly changed but the grain size and crystallinity of the thin film with the increase in anneal temperature. The film annealed at $1,000^{\circ}C$ showed the behavior of Schottky contact and had dislocations in the films. Ohmic contact and TCR of $334.4{\pm}8.2$ (ppm/K) within 4 inch wafer were obtained in the measuring temperature range of 25 to $600^{\circ}C$ for the optimized 200 nm thick-poly Si film with width/length of $20{\mu}m/1,800{\mu}m$. This shows the potential of in-situ P doped LPCVD poly Si as a resistor for pressure sensor in harsh environment applications.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.62-68
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• 1990

On the basis of standard Si processing, the miniaturized piezoresistive-type Si pressure sensor with a chip size of $1.7{\times}1.7{mm^2}$ was fabricated and its operating characteristics were investigated. The sensor chip has a full-bridge type of 4 boron-diffused resistors which is formed on an $1.0{\times}1.0{mm^2}$ area, $20{\mu}m$ thick n-type Si diaphragm and finally, encapsulated under room temperature, 1 atm in order to measure a gauge pressure. The operating characteristics of this sensor were determined as a pressure sensitivity of $14.2{\mu}$V/VmmHg, a rated pressure range of 0~760 mmHg, and a maximum nonlinearity of $1.0{\%}$ FS at room temperature.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.379-384
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• 2015

An infrared image sensor is a core device in a thermal imaging system. The fabrication method of a focal plane array (FPA) is a key technology for a high resolution infrared image sensor. Each pixels in the FPA have $Si_3N_4/SiO_2$ membranes including legs to deposit bolometric materials and electrodes on Si readout circuits (ROIC). Instead of polyimide used to form a sacrificial layer, the feasibility of an amorphous silicon (${\alpha}-Si$) was verified experimentally in a $8{\times}8$ micro-bolometer array with a $50{\mu}m$ pitch. The elimination of the polyimide sacrificial layer hardened by a following plasma assisted deposition process is sometimes far from perfect, and thus requires longer plasma ashing times leading to the deformation of the membrane and leg. Since the amorphous Si could be removed in $XeF_2$ gas at room temperature, however, the fabricated micro-bolomertic structure was not damaged seriously. A radio frequency (RF) sputtered nickel oxide film was grown on a $Si_3N_4/SiO_2$ membrane fabricated using a low stress silicon nitride (LSSiN) technology with a LPCVD system. The deformation of the membrane was effectively reduced by a combining the ${\alpha}-Si$ and LSSiN process for a nickel oxide micro-bolometer.

• Journal of Information Display
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• v.13 no.1
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• pp.51-54
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• 2012

In this study, the bias-temperature stress and current-temperature stress induced by the electrical stabilities of half-Corbino hydrogenated-amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with different gate electrode geometries fabricated on the same substrate were examined. The influence of the gate pattern on the threshold voltage shift of the half-Corbino a-Si:H TFTs is discussed in this paper. The results indicate that the half-Corbino a-Si:H TFT with a patterned gate electrode has enhanced power efficiency and improved aperture ratio when compared with the half-Corbino a-Si:H TFT with an unpatterned gate electrode and the same source/drain electrode geometry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.59-72
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• 1999

In this thesis, we measured the Barkhausen effect of CoFeSiB amorphous ribbon and then investigated its possibility to be used as a sensor material. We used a sample of composition $($Fe_{0.06}$$Co_{0.94}$)_${0.79}$$Si_{2.1}$$B_{18.9}$ with a thickness 12[pm1, width 2.5[rnml and length 5[cm], which was fabricated by a single roll method. In order to improve magnetic characteristics of the sample, we had carried on annealing in the magnetic field and in none magnetic field. And, experimented results to the magnetic characteristics show that the ribbon has large Barkhausen jump even in weak magnetic field below 0.5[0el. From the results, we confirmed that the sample can be used as an magnetic sensor material.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.140-140
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• 1996

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.425-428
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• 2008

This paper describes the resonant characteristics of polycrystalline SiC micro resonators. The $1{\mu}m$ thick polycrystalline 3C-SiC cantilevers with different lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at room temperature. For the $100{\sim}40{\mu}m$ long cantilevers, the fundamental frequency appeared at $147.2kHz{\sim}856.3kHz$. The $100{\mu}m$ and $80{\mu}m$ long cantilevers have second mode resonant frequency at 857.5.kHz and 1.14.MHz, respectively. Therefore, polycrystalline 3C-SiC resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

• Nuclear Engineering and Technology
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• v.52 no.10
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• pp.2346-2352
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• 2020

Dual-energy x-ray absorptiometry (DXA) is the noninvasive method to diagnose osteoporosis disease characterized by low bone mass and deterioration of bone tissue. Many global companies and research groups have developed the various DXA detectors using a direct photon-counting detector such as a cadmium zinc telluride (CZT) sensor. However, this approach using CZT sensor has some drawback such as the limitation of scalability by high cost and the loss of efficiency due to the requirement of a thin detector. In this study, a SiPM based DXA system was developed and its performance evaluated experimentally. The DXA detector was composed of a SiPM sensor coupled with a single LYSO scintillation crystal (3 × 3 × 2 ㎣). The prototype DXA detector was mounted on the dedicated front-end circuit consisting of a voltage-sensitive preamplifier, pulse shaping amplifier and constant fraction discriminator (CFD) circuit. The SiPM based DXA detector showed the 34% (at 59 keV) energy resolution with good BMD accuracy. The proposed SiPM based DXA detector showed the performance comparable to the conventional DXA detector based on CZT.

• Transactions on Electrical and Electronic Materials
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• v.8 no.5
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• pp.196-200
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• 2007

In this paper, we propose and discuss the design using a simple method that reduces the fixed pattern noise(FPN) generated on the amorphous Si($\alpha-Si$) bolometer. This method is applicable to an IR image sensor. This method can also minimize the size of the reference resistor in the readout integrated circuit(ROIC) which processes the signal of an IR image sensor. By connecting four bolometer cells in parallel and averaging the resistances of the bolometer cells, the fixed pattern noise generated in the bolometer cell due to process variations is remarkably reduced. Moreover an $\alpha-Si$ bolometer cell, which is made by a MEMS process, has a large resistance value to guarantee an accurate resistance value. This makes the reference resistor be large. In the proposed cell structure, because the bolometer cells connected in parallel have a quarter of the original bolometer's resistance, a reference resistor, which is made by poly-Si in a CMOS process chip, is implemented to be the size of a quarter. We designed a ROIC with the proposed cell structure and implemented the circuit using a 0.35 um CMOS process.