• The Bulletin of The Korean Astronomical Society
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• v.16
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• pp.14.2-14.2
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• 1991

• Journal of Korea Foundry Society
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• v.41 no.5
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• pp.434-444
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• 2021

This study investigated the overall dependence of the tensile properties of Al-Si alloys on the distribution aspect of a eutectic Si particle in terms of defect susceptibility to the effective void area fraction, referring to the sum of pre-existing microvoids and the damage evolution of the Si particle. The network morphology of as-cast Al-xSi (x=2,5,8,11) alloys was modified to a granular type via a T4 treatment, after which a computational topography (CT) analysis and scanning electron microscope (SEM) observations were utilized to evaluate the size and distribution of the microvoids. The CT and SEM analyses indicated that the main cracks grow along local regions that possess the highest porosity level. The local plastic deformation around the microvoids and the distribution aspect of the microvoids induced a practical difference between the iso-volumetric CT measurement and the SEM fractography outcomes. The results demonstrated that the overall dependence of the ultimate tensile strength (UTS) and elongation on the effective void area fraction is more sensitive to the variation of the area fraction of the Si particle in the network morphology than in the granular type; this is due to the sequential damage evolution of the neighboring Si particles in the eutectic Si colony.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.189-194
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• 1998

The redistribution behavior of boron during Co silicidation annealing in the Co/metal/Si system was investigated using SIMS. Ti, Nb and Hf films were used as epitaxy promoting metal layers. After annealing treatment the boron peak height was about 1 order lowered in Co/Ti/Si and Co/Nb/Si systems but the relative peak position from the surface did not change. The distribution of boron was very similar to those of Ti and Nb, because of the strong affinities of boron with them. Also, the position of the main boron peak in the Co/Hf/Si system was almost the same as that of Hf, but the distribution feature of the Co/Hf/Si system somewhat differed from those of Co/Ti/Si and Co/Nb/Si systems. This implies that the affinity between B and Hf is weaker than those of B-Ti and B-Nb. Boron tends to be depleted at the silicidelsi interface while it tends to be piled-up at the Co-metal/Co silicide interface during silicidation annealing.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.192-192
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• 2014

TiN, Ti(C,N), TiAlSiN, TiZrAlN, TiAlCrSiN 박막을 제조한 후, 이 들의 고온산화 특성을 SEM, EPMA, TGA, TEM, AES 등을 이용하여 조사하고, 산화기구를 제안하였다. 산화속도, 생성되는 산화물의 종류와 분포는 박막의 조성, 산화온도, 산화시간에 따라 변하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.176.1-176.1
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• 2015

본 연구는 플라즈마 건식 식각 후 박막의 물성 특성 변화 측정에 Nano-Indentation 분석 기법을 도입하였으며, 식각 후 박막 표면 강도를 nano 영역에서 측정하여 박막 표면의 damage 분석에 적용하여 물리적인 해석을 시도하였다. 하지만 기판의 대면적화로 인하여 반도체 공정에 사용되는 기판은 300 mm로 증가하였고 이로 인하여 플라즈마 건식 식각에서 대면적에 대한 균일도 향상 연구를 진행 중에 있다. 이 연구에서는 플라즈마 건식 식각 후 박막의 균일도를 Nano-indenter 측정 결과를 기반으로 Weibull 분포 해석을 통하여 정량적인 균일도를 측정하고자 하였다. 플라즈마 건식 식각을 위하여 플라즈마 소스는 Adaptively Coupled Plasma (ACP)를 사용하였고 식각 후 TEOS $SiO_2$ 박막 표면을 분석하기 위하여, 시료 평면의 x, y 축에 대하여 각각 $20{\mu}m$로 indent 각 지점을 이격하여 동일한 측정 조건에서 Nano-indenter를 이용하여 박막 표면의 강도를 측정하였다. 측정된 결과는 Weibull 분포를 활용하여 정량화하였다. 결과에 의하면 플라즈마 소스의 bias 파워가 300 W 일 때 균일도가 가장 높은 29.84로 측정되었고, 150 W 일 때 가장 낮은 8.38로 측정되었다. 식각 전 TEOS $SiO_2$ 박막의 Weibull 분포에 의한 균일도가 17.93으로 측정됨을 기반으로 ACP 플라즈마 소스의 식각 조건에 따라 TEOS $SiO_2$ 박막의 균일도가 상대적으로 변함을 정량적으로 분석할 수 있었다.

• Proceedings of the Korean Nuclear Society Conference
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• 1998.05b
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• pp.256-261
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• 1998

Uranium silicide는 우수한 조사안정성을 가지는 유망한 연구로용 저농축 분산형 핵연료 소재이나 상대적으로 낮은 uranium 함량으로 인해 고출력에 필요한 8~9g-U/㎤ 정도의 uranium 충진 밀도를 얻기 위해서는 Al기지내에 uranium silicide 핵연료 입자의 부피분율을 높여주는 것이 필요하다 핵연료 입자의 부피분율을 높이기 위하여는 핵연료봉의 Al 기지내에 핵연료 입자가 균일하게 분포되어야 한다. 균질한 핵연료 심재를 제조하기 위해서는 핵연료 입자와 알루미늄과의 균일한 혼합이 중요하며 이러한 혼합체내의 분말에 대한 균질도를 정확히 평가하는 방법의 개발이 필요하다. 본 연구에서는 혼합분말의 충진시 겉보기 밀도 측정을 통한 조성의 표준편차를 구하는 방법과 X-ray image 분석법을 새로운 균질도 평가방법으로 제시하였다. 구형의 U$_3$Si분말과 Al분말의 혼합시 drum 회전법의 경우에는 밀도차에 의한 segregation이 발생되고 있으나, Spex mill 혼합법의 경우에는 균질도가 향상되었다. 45-150$\mu\textrm{m}$의 분말크기 분포를 갖는 구형 U$_3$Si의 경우가 작은 입자들이 큰 입자들 사이를 효과적으로 채울 수 있기 때문으로 균일한 분포를 갖는 것으로 생각되며, 밀도차가 큰 U$_3$Si의 경우는 밀도차가 작은 구형 Cu-Sn 혼합체에 비해 균질도가 저하됨을 확인하였다. 겉보기 밀도 측정에 의한 균질도 측정평가와 X-ray image 분석법과의 관계에서는 같은 경향성을 찾을 수 있었다.

• Journal of the Economic Geographical Society of Korea
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• v.25 no.4
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• pp.484-498
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• 2022

The purpose of this study is to analyze the location, distribution and its change of photovoltaic power generation in the scale of municipality(Si-Gun-Gu). First the distribution of photovoltaic power generation was analyzed in 2020, and second, from 2017 to 2021, we tracked the increase in capacity of power generation facilities in each Si-Gun-Gu. As a result, the distribution and increase of photovoltaic power generation were concentrated in some regions and the unequal distribution of photovoltaic power generation has been identified through Gini coefficient.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.240-244
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• 1999

Monolithic SiC and SiC/C functionally gradient material (FGM) layers were deposited on graphite substrates by CVD method. Temperature a profiles and thermal stress distributions in the deposited layers under the thermal shock were calculated by a commercially available software package. The designed FGM specimens were found to show an efficient relaxation of thermal stresses at the interfaces, and the specimens were intact even under a thermal shock of $\Delta$T=1600 K.

• Journal of IKEEE
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• v.20 no.2
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• pp.177-180
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• 2016

The effect of varying thickness of Ag/Ti metal bilayer and annealing time have investigated for controlling self-organized nanoparticles (NPs) on 4H-SiC substrate. In addition, Glass and Si substrate which have different surface energy from SiC were fabricated for analyzing interaction of agglomeration. The results of FE-SEM indicated the different formation behaviors of NPs in various ranges of fabrication condition. The surface energy was measured by using a Contact Angle Analyzer. The formation of network-like NPs was observed on Glass and 4H-SiC, respectively, whereas it was not the case on Si substrates. It has been found that the size of NPs increases with decreasing surface energy, due to particle size-dependent hydrophilic properties of substrates. The different formation behavior was explained by using Young's equation for the contact angles between the metal and different substrates.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.2
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• pp.73-80
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• 1990

The formation of Ti-silicides with the type of substrate, the species and the concentration of dopant, and the annealing temperature was investigated with sheet resistance and thickness measurement, elemental depth profilling, and microstructure. It was directly affected by the type of substrate, the species and the concentration of dopant, and the annealing temperature. For the amorphous Si substrate, the smothness of $TiSi_2/Si$ interface was increased. Above concentr-ation of $1{\times}10^{16}ions/cm^2$, the rate of $TiSi_2/Si$ formation was decreased and the sheet resistance was increased. The initial profile of dopant according to the implantation energy was one of the factors influencing the out-diffusion of dopant. In $POCI_3$ process, this was less than in ion implantation process.