• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.81-85
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• 2004

Nanoporous materials with nanometer-sized pores, are of great interest in the various applications such as selective adsorbents, heterogeneous catalysts and catalyst supports because of their high porosity, surface area, and size selective adsorption properties. This study is aimed to prepare nanoporous catalytic materials on the basis of two-dimersional clay by pillaring of $SiO_2$ sol particles. $SiO_2$ Pillared Montmorillonite (Si-PILM) was prepared by ion exchanging the interlayer $Ni^{2+}$ ions of clay with $SiO_2$ nano-sized particles of which the surface was modified with nicked polyhydroxy cations sach as $Ni_4(OH)_4^{4+}$. Nano-sized $SiO_2$ particles were formed by the controlled hydrolysis of tetraethyl orthosilicate (TEOS). Upon pillaring of $Ni^+$-modified $SiO_2$ nano particles between the clay layers, the basal spacing was expanded largely to $45{\AA}$ and the extremely large specific surface area ($S_{BET}$) of $760m^2/g$ was obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.260-263
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• 2004

During the last few years, there have been many efforts on the fabrication of electronic and optical devices based on semiconductor nanowires. Room-temperature ultraviolet lasing in GaN nanowire, ultraviolet light sensing in ZnO nanowire, and dramatically improved hall mobility in Si nanowire have been demonstrated in this article. The studies on semiconductor nanowire based electronic and optical device is reviewed.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.145-152
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• 2007

The evolution dynamics of nanoscale Ge islands on both Si (001) and (113) surfaces is explored using ultraviolet photoelectron emission microscopy (UV-PEEM). Real-time monitoring of the in-situ growth of the Ge island structures can allow us to study the variation of the size, the shape and the density of the nanostructures. For Ge depositions greater than ${\sim}4$ monolayer (ML) with a growth rate of ${\sim}0.4\;ML/min$ at temperatures of $450-550^{\circ}C$, we observed island nucleation on both surfaces indicating the transition from strained layer to island structure. During continuous deposition the circular islands grew larger via ripening processes. AFM measurements showed that the islands grown on Si (001) were dome-shaped while the islands on Si (113) were multiple-side faceted with flat tops of (113)-orientation. In contrast, for Ge deposition with a lower growth rate of ${\sim}0.15\;ML/min$ on Si(113), we observed the shape transition from circular into elongated island structures. The elongated islands grew longer along the [$33\bar{2}$] during continuous Ge deposition. The shape evolution of the islands is discussed in terms of strain relaxation and kinetic effects.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.290.2-290.2
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• 2013

X-선 튜브는 의료 영상 및 치료, 산업용 제전 장치, 비파괴 X-선 영상 장치 등에서 사용되는데 기존의 열전자원을 이용한 X-선 튜브와는 달리, 냉음극형 X-선 튜브는 빠른 속도의 디지털 구동이 가능하며 전력 소비가 낮은 장점이 있다. 따라서, 최근 많은 연구자들에 의해서 냉음극형 X-선 튜브에 관한 연구가 활발하게 진행되고 있다. 냉음극형 X-선 튜브는 전계 방출을 이용한 전자원을 사용하며, 탄소나노튜브 (CNT), Si, 다양한 종류의 나노선 등이 대표적이다. 그 중에서 CNT는 높은 종횡비로 인해 전계 방출 특성이 우수하여 가장 대표적인 물질이다. CNT를 이용한 전자원을 제작하기 위해서는 직접 성장법, 전기영동법, 스크린 프린팅법, 디핑법 등 다양한 방법이 존재한다. 직접 성장법을 제외한 방법들은 모재료인 CNT와 용매, 금속재료들을 섞어 페이스트나 수용액의 상태를 제작하여야 한다. 이 때, 금속 재료는 기판과 CNT간의 접착 및 전자 전도 통로의 역할을 하는 무기 충전제이며 일반적으로 나노 혹은 수 마이크로미터 크기의 상태로 존재하는 것을 주로 사용한다. X-선 튜브 제작은 일반적으로 외벽을 유리 혹은 세라믹을 주로 사용하는데 아노드 전극 및 캐소드 전극 등과 결합하여 진공 밀봉된 형태가 되어야 한다. 브레이징 방법은 금속과 세라믹을 결합하는데 매우 유용한 방법이며, 그 중에서도 진공 브레이징 방법은 다량의 부품을 한 번에 결합시킬 수 있다. 하지만 진공 브레이징 공정의 온도는 약 $700{\sim}1,000^{\circ}C$이며 이는 금속 재료가 충분히 증발할 수 있는 온도가 된다. 본 발표에서는 고온 진공 상태에서의 무기 충전제의 증발에 대한 현상을 관찰하고 고온진공 상태에서 증발없이 무기 충전제로의 역할을 할 수 있도록 다양한 금속 및 합금에 대한 연구를 수행하였다. 또한, 이 연구를 통해 선택된 무기 충전제를 포함하여 CNT 페이스트를 볼밀링 방법을 이용하여 제작하였으며, 이를 이용한 CNT 에미터가 X-선 튜브의 전자원으로 사용될 수 있는지 확인하기 위해 전계 방출 실험을 함께 실시하였다. 제작된 CNT 에미터가 우수한 전계 방출 특성을 가지고 있음을 확인하였으며, 이는 본 연구를 통해 선택된 금속 및 합금 재료가 무기 충전제로의 역할을 잘 수행하고 있음을 보여준다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.1
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• pp.105-108
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• 2011

Newly-developed fabrication of a p-n heterojunction diode constructed with a p-Si nanowire (NW) and an n-ZnO nanoparticle (NP) thin-film by the dielectrophoresis (DEP) technique is demonstrated in this study. With the bias of 20 Vp-p at the input frequency of 1 MHz, the most efficient assembly of the n-ZnO NPs is shown for the fabrication of the p-n heterojunction diode with a p-Si NW. The p-n heterojunction diode fabricated in this study represents current rectifying characteristics with the turn on voltage of 1.1 V. The diode can be applied to the fabrication of optoelectrical devices such as photodetectors, light-emitting diodes (LEDs), or solar cells based on the high conductivity of the NW and the high surface to volume ratio of the NP thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.91-95
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• 2012

ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

• Journal of the Korean Vacuum Society
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• v.16 no.4
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• pp.298-304
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• 2007

We have studied the effect of $N_2$ flow rate on the structural and optical properties of GaN nanorods grown on (111) Si substrates by radio-frequency plasma-assisted molecular-beam epitaxy. The hexagonal shape nanorods with lateral diameters from 80 to 190 nm with increasing $N_2$ flow rate from 1.1 to 2.0 sccm are obtained. However, the ratio of length (thickness) and compact region increases with increasing $N_2$ flow rate up to 1.7 sccm and then saturate. From the photoluminescence, free exciton transition is clearly observed for GaN nanorods with low $N_2$ flow rate. And the PL peak energies are blue-shifted with decreasing diameter of the GaN nanorods due to size effect. Temperature-dependent photoluminescence spectra for the nanorods with $N_2$ flow rate of 1.7 sccm show an abnormal behavior like "S-shape" with increasing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.132-132
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• 2009

A 2D-simulation using a quantum model of silicon nanowire (SiNW) field-effect transistors (FETs) have been performed by the effective mass theory. We have investigated very close for real device analysis, so we used to the non-equilibrium Green's function (NEGF) and the density gradient of quantum model. We investigated I-V characteristics curve and C-V characteristics curve of the channel thickness from 5nm to 200nm. As a result of simulation, even higher drain current in SiNW using a quantum model was observed than in SiNW using a non-quantum model. The reason of higher drain current can be explained by the quantum confinement effect.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.81-83
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• 2005

Photocurrent of a single-crystalline Si nanowire is investigated in this paper. Single-crystalline Si nanowires with amorphous $SiO_2$ shells were first synthesized from ball-milled SiO powders by thermal chemical vapor deposition, and then the amorphous $SiO_2$ shellswere etched out from the as-synthesized Si nanowires. For a single-crystalline Si nanowire, photocurrent-voltage curves taken in air at room temperature were non-linear, and rapid photoresponses were observed when the light was switched on and off. The photocurrent was not changed in intensity under the illumination. Photocurrent mechanism in the single-crystalline Si nanowire is discussed in this paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.6
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• pp.441-445
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• 2013

ZnO nanowires on the a-, c- and m-plane oriented 4H-SiC substrates were grown by using a high temperature tube furnace. Ti/Au electrodes were deposited on ZnO nanowires and a-, c- and m-plane 4H-SiC substrates, respectively. The shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. It was found that the growth direction of nanowires depends strongly on growth parameters such as growth temperature and pressure. In this work, The sensitivity of nanowires formed a-, c- and m-plane oriented 4H-SiC gas sensor was measured at $300^{\circ}C$ with CO gas concentration of 80%. The nanowires grown on a-plane oriented 4H-SiC show improved sensing performance than those on c- and m-plane oriented 4H-SiC due to the increased density of nanowire on a-plane 4H-SiC.