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http://dx.doi.org/10.5370/KIEE.2011.60.1.105

A p-n Heterojunction Diode Constructed with A p-Si Nanowire and An n-ZnO Nanoparticle Thin-Film by Dielectrophoresis  

Kim, Kwang-Eun (고려대학교 전기전자전파공학과)
Lee, Myeong-Won (고려대학교 전자전기공학과)
Yun, Jung-Gwon (고려대학교 전자전기공학과)
Kim, Sang-Sig (고려대학교 전기전자전파공학과)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.60, no.1, 2011 , pp. 105-108 More about this Journal
Abstract
Newly-developed fabrication of a p-n heterojunction diode constructed with a p-Si nanowire (NW) and an n-ZnO nanoparticle (NP) thin-film by the dielectrophoresis (DEP) technique is demonstrated in this study. With the bias of 20 Vp-p at the input frequency of 1 MHz, the most efficient assembly of the n-ZnO NPs is shown for the fabrication of the p-n heterojunction diode with a p-Si NW. The p-n heterojunction diode fabricated in this study represents current rectifying characteristics with the turn on voltage of 1.1 V. The diode can be applied to the fabrication of optoelectrical devices such as photodetectors, light-emitting diodes (LEDs), or solar cells based on the high conductivity of the NW and the high surface to volume ratio of the NP thin film.
Keywords
P-n heterojunction; Si; ZnO; Nanowire; Nanoparticle; Dielectrophoresis;
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