• 한국세라믹학회지
• /
• 제30권11호
• /
• pp.897-904
• /
• 1993

CdS doped SiO2 glass coating films which are good candidates for the nonlinear optical materials were prepared by the Sol-Gel method. TEOS, C2H5OH, H2O and HCl were used as starting materials to obtain SiO2 matrix solutions. Then Cd(NO3)2.2H2O and CS(NH2)2 were dissolved into the SiO2 matrix solutions. Coating was performed several times in order to increase the thickness of coated film by the dip-coating method. Then heat treatments were carried out to control the size of CdS microcrystals doped in SiO2 glass matrix with respect to temperatures and times. CdS-doped SiO2 transparent coating films were successfully obtained. CdS crystals were changed from cubic to hexagonal type about $600^{\circ}C$.

• 한국전기전자재료학회논문지
• /
• 제22권5호
• /
• pp.419-424
• /
• 2009

ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

• 한국전기전자재료학회논문지
• /
• 제20권4호
• /
• pp.363-366
• /
• 2007

[ $Zn_2SiO_4:Mn$ ] green phosphors doped with $NH_4Cl$ and Al for PDP were synthesized by solid state reaction method. The luminescence of 532 nm in $Zn_2SiO_4:Mn$ phosphors was associated with $^4T_1{\to}^6A_1$ transition. Photoluminescence intensity of $Zn_2SiO_4:Mn$ doped with $NH_4Cl$ 15 mol% increased about two times as compared with that of $NH_4Cl$ non-doped sample. The color of the emission of Al-doped $Zn_2SiO_4:Mn$ phosphors changed to yellowish green.

• 한국결정성장학회지
• /
• 제17권2호
• /
• pp.47-51
• /
• 2007

저굴절 재료인 F-doped SiOC : H 박막을 Si 웨이퍼와 유리기판위에 rf power, 기판온도, 그리고 가스유량($SiH_4,\;CF_4$ and $N_2O$)을 변수로 하여 PECVD법으로 증착하였다. 기판 온도와 rf power증가에 따라 F-doped SiOC : H 박막의 굴절률은 감소하는 경향을 보였다. $N_2O$ 가스 유량이 감소함에 따라 증착된 박막의 굴절률은 감소하였으며, rf power가 180W 기판온도 $100^{\circ}C$, 그리고 $N_2O$ 가스를 첨가하지 않은 조건에서 증착한 박막은 최소 굴절률인 1.3778을 갖는 것을 알 수 있었다. Rf power 60W에서 180W로 증가시킴에 따라 증착된 박막의 불소 함량은 1.9at%에서 2.4at%로 증가하였으며 이러한 이유로 박막의 굴절률은 감소하는 경향을 나타냈다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
• /
• pp.137-137
• /
• 2003

Optical amplificator have been used to compensate the losses in the optical signal transmission and processing. Today, there has been increasing demand for the very low cost optical amplifier. Sol-gel offers considerable potential both low cost manufacture, and for great flexibility in materials composition and structure. In addition, the sol-gel process is a very attractive method for producing porous materials with controlled structure. In this work, we present the potoluminescence properties of Er doped A1$_2$O$_3$/SiO$_2$ films. Erbium doped alumina nano sol was prepared by Al(NO$_3$)$_3$.9$H_2O$ and Er(NO$_3$)$_3$.5$H_2O$ through hydrolysis and peptization, and then GPS (3-Glycidoxypropyltrimethoxysilane) was added into Er doped alumina nano sol for organic- inorganic hybridization. Er doped A1$_2$O$_3$/SiO$_2$ film was obtained by spin coating, dip coating and thermal treatment from 30$0^{\circ}C$~120$0^{\circ}C$, and there were crack-free after thermal treatment. The thickness of film was measured SEM, and the porosity of film was characterized by BET and TGA. The crystal phase of Er doped A1$_2$O$_3$/SiO$_2$ were determined by XRD. Finally, the photoluminescence properties of Er doped A1$_2$O$_3$/SiO$_2$ films will be discuss with the consideration of porosity and crystallity.

• Corrosion Science and Technology
• /
• 제7권4호
• /
• pp.233-236
• /
• 2008

Halide-activated pack cementation was utilized to deposit B-doped silicide coating. The pack powders were consisted of $3Wt.c/oNH_4Cl$, 7Wt.c/oSi, $90Wt.c/oAl_2O_3+TiB_2$. B-doped silicide coating was consisted of two layers, an outer layer of $NbSi_2$ and an inner layer of $Nb_5Si_3$. Isothermal oxidation resistance of B-doped silicide coating was tested at $1250^{\circ}C$ in static air. B-doped silicide coating had excellent oxidation resistance, because continuous $SiO_2$ scale which serves as obstacle of oxygen diffusion was formed after oxidation.

• 한국세라믹학회지
• /
• 제45권9호
• /
• pp.512-517
• /
• 2008

In this study, yttrium-doped $SiO_2$ nanoparticles are synthesized using a reverse micelle technique combined with metal alkoxide hydrolysis and condensation. Spherical Y-doped $SiO_2$ nanoparticles with a uniform size distribution are prepared using selfassembly molecules in conjunction with the hydrolysis and condensation of organometallic precursors. The water/surfactant molar ratio influenced the Y-doped $SiO_2$ particles distribution of the core-shell composite particles and the distribution of Y doped $SiO_2$ particles was broadened as the water to surfactant ratio increased. The particle size of Y increase linearly as the $Y(NO_3)_3$ solution concentration increased. The average size of the cluster was found to depend on the micelle size, the nature of the solvent, and the concentration of the reagent. The effects of synthesis parameters, such as the molar ratio of water to surfactant and the molar ratio of water to TEOS, are discussed.

• 한국전기전자재료학회논문지
• /
• 제22권5호
• /
• pp.415-418
• /
• 2009

$Zn_{2}SiO_{4}$:Mn green phosphors doped with Mg for PDP were synthesized by solid state reaction method. $Zn_{2}SiO_{4}$:Mn, Mg phosphors with increasing Mg concentration were changed from Rhombohedral to Orthorhombic structure. Photoluminescence intensity of $Zn_{2}SiO_{4}$:Mn phosphors doped with Mg 0.5 mol was definitely higher than that of Mg non-doped sample. The enhanced luminescence with doping Mg in the $Zn_{2}SiO_{4}$:Mn phosphors was interpreted by the increase of energy transfer from host to Mn ions with substitution Mg for Zn in the $Zn_{2}SiO_{4}$:Mn host.

• 전자공학회논문지A
• /
• 제31A권6호
• /
• pp.107-116
• /
• 1994

In this paper, The electrical properties of MOS capacitors and transistoras with gate of in-situ doped amorphous Si and poly Si doped by POCI$_3$. Under constant current F-N stress, MOS capacitors with in-situ doped amorphous Si gate have shown the best resistance to degradation in reliabilty properties such as increase of leakage current, shift of gate voltage (V$_{g}$). shift of flat band voltage (V$_{fb}$) and charge to breakdown(Q$_{bd}$). Also, MOSFETs with in-situ doped amorphous Si gate have shown to have less degradation in transistor properties such as threshold voltage, transconductance and drain current. These improvements observed in MOS devices with in-situ doped amorphous Si gate is attributed to less local thinning spots at the gate/SiO$_2$ interface, caused by the large grain size and the smoothness of the surface at the gate/SiO$_2$ interface.

• 한국자기학회지
• /
• 제8권6호
• /
• pp.346-349
• /
• 1998

Poly-Si 활성층이 도핑되지 않은 도는 BF2 이온주입으로 도핑된 poly-Si/SiO2 박막에 존재하는 결함을 효과적으로 감소시키기 위하여 저온 rf 수소플라즈마 처리를 수행하였고, 결합의 변화를 전자상자성공명을 이용하여 조사하엿다. 활성층이 도핑되지 않은 시편과 도핑된 시편에서 모두 관측되었던 Pb center와 E' center가 30분의 수소화처리 결과, Pb center의 경우에 각각 80%(도핑되지 않은 시편)와 76% (되핑된 시편)의 큰 결함 감소효과를 얻었으며 E center는 제거되어 관측되지 않았다. 90분의 처리공정에서는 두 시편에서 모두 감소되었던 Pbcenter의 밀도가 다시 증가하였으며, 제거되었던 E' center가 재생되엇다. 특히 도핑된 시편에서의 Pbcenter의 밀도증가가 더욱 민감하게 나타났다.