• 제목/요약/키워드: Si(114)

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Structural analysis and photoluminescent study of thin film rhombohedral zinc orthosilicate doped with manganese

  • Yoon, Kyung-Ho;Kim, Joo-Han
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.114-114
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    • 2010
  • In this study, structural properties and photoluminescent characteristics of thin film rhombohedral zinc orthosilicate doped with manganese ($Zn_2SiO_4:Mn$) were investigated. The $Zn_2SiO_4:Mn$ films showed a pronounced absorption edge in the near ultraviolet wavelength region and a high optical transparency in the visible spectral range. The maximum transmittance reached 0.922 at 597 nm, which was very close to the transmittance of the fused quartz substrate alone (0.935). The $Zn_2SiO_4:Mn$ films were composed of rhombohedral polycrystalline grains with random crystallographic orientation. The broad-band photoluminescence emission peaked at around 525 nm was observed from the $Zn_2SiO_4:Mn$ films, which was ascribed to the radiative relaxation from the $^4T_1$ lowest excitation state to $^6A_1$ ground state of 3d5 electrons in divalent manganese ion. The excitation band exhibited a peak maximum at 259 nm in the near ultraviolet region, which was considered to be associated with the charge transfer transition of divalent Mn ion in the $Zn_2SiO_4$ system.

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The Frequency Characteristics of Elastic Wave by Crack Propagation of SiC/SiC Composites

  • Kim, J.W.;Nam, K.W.
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2012년도 추계학술대회 논문집
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    • pp.110-114
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    • 2012
  • We studied on the nondestructive evaluation of the elastic wave signal of SiC ceramics and SiC/SiC composite ceramics under monotonic tensile loading. The elastic wave signal of cross and unidirectional SiC/SiC composite ceramics were obtained by pencil lead method and bending test. It was applied for the time-frequency method which used by the discrete wavelet analysis algorithm. The time-frequency analysis provides time variation of each frequency component involved in a waveform, which makes it possible to evaluate the contribution of SiC fiber frequency. The results were compared with the characteristic of frequency group from SiC slurry and fiber. Based on the results, if it is possible to shift up and design as a higher frequency group, we will can make the superior material better than those of exiting SiC/SiC composites.

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단일채널 Strained Si/SiGe 구조와 이중채널 Strained Si/SiGe 구조의 이동도 특성 비교 (Comparison of Hole Mobility Characteristics of Single Channel and Dual Channel Si/SiGe Structure)

  • 정종완
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.113-114
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    • 2007
  • Hole mobility characteristics of single surface channel and dual channel Si/SiGe structure are compared, where the former one consists of a relaxed SiGe buffer layer and a tensile strained Si layer on top, and for dual channel structure a compressively strained SiGe layer is inserted between them. Due to the difference of hole mobility enhancement factors of layers between them, hole mobility characteristics with respect to the Si cap thickness shows the opposite tend. Hole mobility increases with thicker Si cap for single channel structure, whereas it decreases with thicker Si cap for dual channel structure.

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반사방지막(ARC)의 SiO2 구조에 따른 PERC 태양전지 PID 열화 완화 상관관계 연구 (Mitigation of Potential-Induced Degradation (PID) for PERC Solar Cells Using SiO2 Structure of ARC Layer)

  • 오경석;박지원;천성일
    • Current Photovoltaic Research
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    • 제8권4호
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    • pp.114-119
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    • 2020
  • In this study, Mitigation of Potential-induced degradation (PID) for PERC solar cells using SiO2 Structure of ARC layer. The conventional PID test was conducted with a cell-level test based on the IEC-62804 test standard, but a copper PID test device was manufactured to increase the PID detection rate. The accelerated aging test was conducted by maintaining 96 hours with a potential difference of 1000 V at a temperature of 60℃. As a result, the PERC solar cell of SiO2-Free ARC structure decreased 22.11% compared to the initial efficiency, and the PERC solar cell of the Upper-SiO2 ARC structure decreased 30.78% of the initial efficiency and the PID reliability was not good. However, the PERC solar cell with the lower-SiO2 ARC structure reduced only 2.44%, effectively mitigating the degradation of PID. Na+ ions in the cover glass generate PID on the surface of the PERC solar cell. In order to prevent PID, the structure of SiNx and SiO2 thin films of the ARC layer is important. SiO2 thin film must be deposited on bottom of ARC layer and the surface of the PERC solar cell N-type emitter to prevent surface recombination and stacking fault defects of the PERC solar cell and mitigated PID degradation.

고 Si강의 레이저 용접특성

  • 이기호;김기철
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 1993년도 특별강연 및 춘계학술발표 개요집
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    • pp.113-114
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    • 1993
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