• Journal of the Korean Society for Heat Treatment
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• v.18 no.4
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• pp.229-234
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• 2005

Effect of incident ion beam energy on microstructure and adhesion behavior of TiN thin films were studied. Without ion beam assist, TiN film showed (111) growth mode which was thought to have the lowest deformation energy. As the ion beam assist energy increased, TiN film growth mode was changed from (111) to (200) mode. On the Si(100) substrate the critical incident energy for growth mode change was 100 eV/atom, however the critical assist energy was 121 eV/atom on the STD61 substrate. Grain size of TiN films increased with the assist ion beam energy. Finally, adhesion strength of TiN films bombarded above the critical ion assist energy showed 4~5 times higher values than that with lower bombard ion energy.

• Journal of fish pathology
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• v.34 no.1
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• pp.111-115
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• 2021

Immunoglobulin M (IgM) of sevenband grouper (Epinephelus septemfasciatus) was purified by mannan-binding protein (MBP) affinity column. The purified IgM had an apparent molecular weights of 76 (heavy chain) and 28 (light chain) kDa in sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE). Eight hybridoma clones secreting monoclonal antibodies (mAbs) against sevenband grouper IgM were established. Antibody detection enzyme-linked immunosorbent assay (ELISA) with bovine serum albumin (BSA, antigen) and the 8 mAbs revealed that optical density (OD) values were clearly different between sera from BSA-immunization and non-immunization of sevenband grouper. These results suggest that the produced mAbs in this study are specifically reacted with IgM of sevenband grouper.

• Current Photovoltaic Research
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• v.9 no.4
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• pp.111-122
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• 2021

Silicon heterojunction technology (HJT) solar cells have received considerable attention due to advantages that include high efficiency over 26%, good performance in the real world environment, and easy application to bifacial power generation using symmetric device structure. Furthermore, ultra-highly efficient perovskite/c-Si tandem devices using the HJT bottom cells have been reported. In this paper, we discuss the unique feature of the HJT solar cells, the fabrication processes and the current status of technology development. We also investigate practical challenges and key technologies of the HJT solar cell manufacturers for reducing fabrication cost and increasing productivity.

• Journal of the Korean Ceramic Society
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• v.42 no.9 s.280
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• pp.624-630
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• 2005

To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

• KSBB Journal
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• v.15 no.3
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• pp.254-261
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• 2000

A bacterial leaching was conducted for pyrite with Thiobacillus ferrooxidans(ATcC 19859) and Thiobacillus KY isolated from acid mine water around Kwangyang area to characterize the surface of substrate as reaction progress at the optimum condition under 9K medium for 3- days. It was found that the surface crystallinity changes referred to hkl plane was observed for 20 days leached by T. ferrooxidans similar changes also observed for 10 days leached pyrite by Thiobacillus KY. Based on he results of SEM-EDS the atomic ratios of Fe, S and Si on the surface were changed to sulfur rich phase but exposed Si ratio decreased from 16.94% to 4.85% during 30days mainly due to reprecipitating of Fe and S as a mixed compound.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.1
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• pp.33-40
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• 1992

Several etching phenomena were observed and analyzed in diaphragm process performed on 4-inch (100) Si wafers for sensor application. In case of deep etching to above 300$\mu$m depth, the etch-defects appeared at etched surface could be classified into three categories such as hillocks, reaction products, and white residues. It was known that the hillock had a pyramidal shape or trapizoidal hexahedron structure depending on the density and size of the reaction products. The IR spectra showed that the white residue, which was due to the local over-saturation of Si dissolved in solution, was mostly Si-N-O compounds mixed with a small amount of H and C etc. Also, the difference in both the existence of etch-defects and etch rate distribution over a whole wafer was investigated when the etched surfaces were downward, upward horizontally and erective in etching solutions. The obtained data were analyzed through flow pattern in the etching bath. As the results, the downward and erective postures were favorable in the etch rate uniformity and the etch-defect removal, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.2
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• pp.65-72
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• 2012

Aluminum induced crystallization of amorphous silicon was attempted by the aluminum substrate. To avoid the layer exchange between silicon and aluminum layer, Ni layer was deposited between these two layers by sputtering. To obtain the bigger grain of the crystalline silicon, wet blasted silica layer was employed as windows between the nickel and a-Si layer. Ni obtained after the annealing treatment at $520^{\circ}C$ was found to be a promising material for the diffusion barrier between silicon and aluminum. One way to obtain bigger grain of crystalline silicon layer applicable to solar cell of higher performance was envisioned in this investigation.

• Parasites, Hosts and Diseases
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• v.53 no.5
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• pp.611-618
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• 2015

This study describes the first record of Globocephalus samoensis (Nematoda: Ancylostomatidae) recovered in wild boars from southwestern regions of Korea. Gastrointestinal tracts of 111 Korean wild boars (Sus scrofa coreanus) hunted from mountains in Suncheon-si, Gwangyang-si, and Boseong-gun between 2009 and 2012 were examined for their visceral helminths. G. samoensis, as identified by morphological characteristics of the head and tail, were recovered from the small intestine of 51 (45.9%) wild boars. Worms were found from 7 of 28 wild boars (25.0%) from Suncheon-si, 40 of 79 (50.6%) from Gwangyang-si, and all 4 (100%) from Boseong-gun. The length of adult females was $7.2{\pm}0.5mm$, and the thickest part of the body measured the average $0.47{\pm}0.03mm$, while those of males were $6.52{\pm}0.19$ and $0.37{\pm}0.02mm$, respectively. The buccal cavity was equipped with a pair of large and bicuspid subventral lancets near the base of the capsule. The average length of spicules of males was $0.45{\pm}0.02mm$. By the present study, G. samoensis is recorded for the first time in southwestern regions of Korea. Additionally, morphological characteristics and identification keys provided in the present study will be helpful in the faunistic and taxonomic studies for strongylid nematodes in both domestic and wild pigs. The infection of G. samoensis apparently did not elicit pathologic lesions, as revealed by macroscopic observation during the autopsy of all wild boars in this study.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.723-732
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• 1996

Cu films were deposited by chemical wapor deposition on the as-received substrates (TiN/Si) and three kinds of Cu-seeded substrates (Cu/TiN/Si) which had seeding layer in the thick ness of 5 ${\AA}$ and 130 ${\AA}$ coated by ICB(Ionized Cluster Beam) method. The effect of Cu seeding layers on the growth rate, crystallinity, grain size uniformity and film adhesion strength of final CVD-Cu films was investigated by scanning eletron microscopy(SEM), X-ray diffractometry and scratch test. The growth rate was found to incresase somewhat in the case of ICB-seeding. The XRD patterns of the Cu films on the as-received substrate and ICB Cu-seeded substrates exhibited the diffraction peaks corresponding to FCC phase, but the peak intensity ratio($I_{111}/I_{200}$) of Cu films deposited on the ICB Cu-seeded substrates increased compared with that of Cu films on the as-received substrate. The resistivity of final Cu film on 40 ${\AA}$ seeded substrate was observed as the lowest value, 2.42 $\mu\Omega\cdot$cm compared with other Cu films. In adhesion test, as the seeding thickness increased from zero to 130 ${\AA}$, the adhesion strength increased from 21N to 27N.

• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.942-947
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• 2001

Thickness dependence of orientation on piezoelectric and electrical properties was investigated by PZT (52/48) films by diol based sol-gel method. The thickness of each layer by spinning at one time was $0.2{\mu}m$ and crack-free films could be successfully deposited on 4 inches Pt/Ti/$SiO_2$/Si substrates by 0.5 mol solutions in the range from $0.2{\mu}m$ to $3.8{\mu}m$. Excellent P-E hysteresis curves were achieved, which were attributed to the well-densified PZT films and columnar grain without pores or any defects between interlayers. The (111) preferred orientation of films were shown in the range of thickness below $1{\mu}m$. As the thickness increased, the (111) preferred orientation disappeared from $1{\mu}m$ to $3{\mu}m$ region, and the orientation of films became random above $3{\mu}m$. Dielectric constants and longitudinal piezoelectric coefficient, $d_{33}$, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of $1{\mu}m$.