• The Bulletin of The Korean Astronomical Society
• /
• v.35 no.2
• /
• pp.79.2-79.2
• /
• 2010

We present the results of simultaneous observations of SiO v=1, 2, J=1-0, $^{29}SiO$ v=0, J=1-0, and $H_2O$ $6_{16}-5_{23}$ maser lines performed with the KVN Yonsei 21 m radio telescope from 2009 Nov. to 2010 Jan (ApJ, 719, 126, 2010). We searched for these masers in 47 symbiotic stars and detected maser emission from 21 stars, giving the first time detection from 19 stars. Both SiO and $H_2O$ masers were detected from seven stars of which six stars are D-type symbiotic and one is an S-type star, WRAY 15-1470. In the SiO maser emission, the $^{28}SiO$ v=1 maser was detected from 10 stars, while the v=2 maser detected from 15 stars. In particular, the $^{28}SiO$ v=2 maser emission without the v=1 maser detection was detected from nine stars with its detection rate of 60 %, which is much higher than that of isolated Miras/red giants. The $^{29}SiO$ v=0 maser emission was also detected from two stars, H 2-38 and BF Cyg, together with the $^{28}SiO$ v=2 maser. We conclude that these different observational results between isolated Miras/red giants and symbiotic stars may be related with the presence of hot companions in a symbiotic binary system.

• Journal of the Korean Ceramic Society
• /
• v.39 no.5
• /
• pp.479-483
• /
• 2002

Silicon dioxide thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition(PECVD) method, at a low temperature ($320^{\circ}$C) and from $(SiH_4+N_2O)$ gas mixtures. The effects of deposition parameters on properties of $SiO_2$ thick films were investigated by variation of $N_2O/SiH_4$ flow ratio and RF power. After the deposition process, the samples were annealed in a furnace at $1150^{\circ}$C, in N2 atmosphere, for 2h. As the $N_2O/SiH_4$ flow ratio increased, deposition rate decreased from 9.4 to 2.9 ${\mu}m/h$. As the RF power increased, deposition rate increased from 4.7 to 6.9 ${\mu}m/h$. The thickness and the refractive index measurements were measured by prism coupler. X-ray Photoelectron Spectroscopy(XPS) and Fourier Transform-infrared Spectroscopy(FT-IR) were used to determine the chemical states. The cross-section of films was observed by Scanning Electron Microscopy(SEM).

• Korean Journal of Materials Research
• /
• v.6 no.3
• /
• pp.309-317
• /
• 1996

세가지 다른 방법을 이용하여 형성시킨 비정질 실리콘(SiH4 a-Si, Si2H6 a-Si, Si+ implanted SiH4 a-Si)들에 대한 저온 결정화 기구의 차이를 고전적 이론인 Avrami 식(X=1-exptn, X=결정화 분율, t=열처리 시간, n=지수)을 이용하여 검토하였다. Silane으로 형성된 비정질 실리콘의 결정화 과정에서는 Avrami 식에서의 n의 값이 2.0을 나타내고 있어, 결정성장이 이차원적으로 이루어지면서 핵생성률이 시간에 따라 감소하고 있음을 알 수가 있었다. Si+ 이온 주입에 의하여 형성된 비정질 실리콘의 결정화에서는 3.0의 지수 값이 얻어지고 있어, 정상상태의 핵생성과 함께 2차원적인 결정 성장이 이루어지고 있었다. Disilane으로 형성된 비정질 실리콘에 대한 결정화에서는 2.8의 지수값이 얻어져, 정상상태의 핵 생성이 우세하게 일어나는 2차원적인 결정성장이 일어나고 있음을 알 수 있었다. 또한 TEM을 이용하여 시간에 따라 변하는 핵생성률을 조사하여, Avrami 식의 적용이 타당성 있음을 증명하였다. 마지막으로, 최종 입자의 크기가 열처리 온도에 크게 영향을 받고 있지 않음을 확인하였다.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.5
• /
• pp.339-343
• /
• 1999

This paper reports the characteristics of poly-Si TFT unitary CMOS circuits fabricated with various techniques, in order to investigate the optimum process conditions. The active films were deposited by PECVD and LPCVD using $SiH_4\; and\; Si_2H_6$ as source gas, and annealed by SPC and ELA methods. The impurity doping of the oource and drain electrodes was performed by ion implantation and ion shower. In order to investigate the AC characteristics of the poly-Si TFTs processed with various methods, we have examined the current driving characteristics of the polt-Si TFT and the frequency characteristics of 23-stage CMOS ring oscillators. Ithas been observed that the circuits fabricated using $Si_2H_6$ with low-temperature process of ELA exhibit high switching speed and current driving performances, thus suitable for real application of large area electronics.

• Nano
• /
• v.13 no.12
• /
• pp.1850137.1-1850137.9
• /
• 2018

A series of silica surface-capped with hexamethyldisilazane (denoted as $H-SiO_2$) were prepared by liquid-phase in-situ surface-modification method. The as-obtained $H-SiO_2$ was incorporated into acrylic amino (AA) baking paint to obtain AA/$H-SiO_2$ composite extinction paints and/or coatings. $N_2$ adsorption-desorption tests were conducted to determine the specific surface area as well as pore size and pore volume of $H-SiO_2$. Moreover, the effects of $H-SiO_2$ matting agents on the physical properties of AA paint as well as the gloss and transmittance of AA-based composite extinction coatings were investigated. Results show that $H-SiO_2$ matting agents possess a large specific surface area and pore volume than previously reported silica obtained by liquid-phase method. Besides, they have better dispersibility in AA baking paint than the unmodified silica. Particularly, $H-SiO_2$ with a silica particle size of $6.7{\mu}m$ and the dosage of 4% (mass fraction) provides an extinction rate of 95.2% and a transmittance of 79.3% for the AA-based composite extinction coating, showing advantages over OK520, a conventional silica matting agent. Along with the increase in the silica particle size, $H-SiO_2$ matting agents cause a certain degree of increase in the viscosity of AA paint as well as a noticeable decrease in the gloss of the AA-based composite extinction coating, but they have insignificant effects on the hardness and adhesion to substrate of the AA-based composite coatings. This means that $H-SiO_2$ matting agents could be well applicable to preparing low-viscosity and low-gloss AA-based matte coatings.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.153-153
• /
• 2010

p-i-n 형 비정질 실리콘 박막 태양전지에서 p층은 창물질(window material)로서 전기 전도도가 크고, 빛 흡수가 적어야한다. p층의 두께가 얇으면 p층 전체가 depletion layer가 되고 충분한 diffusion potential을 얻을 수 없어 open-circuit voltage ($V_{oc}$)가 작아진다. 반대로 p층 두께가 두꺼워지면 빛 흡수가 증가하고, 표면 재결합이 문제가 되어 변환효율이 감소한다. 밴드갭이 큰 물질로 창층을 제작하게 되면 보다 짧은 파장의 입사광이 직접 i층을 비추므로 Short-circuit current ($I_{sc}$) 와 fill factor를 증가시킬 수 있다. 하여 본 연구에서는 기존의 창층으로 사용되는 Boron을 doping한 p-type a-Si:H 대신에 $N_2O$를 첨가한 p-type a-$SiO_x$:H의 $N_2O$ flow rate에 따른 밴드갭의 변화에 관한 연구를 수행하였다. p-type a-$SiO_x$:H Layer는 $SiH_4$, $H_2$, $N_2O$, $B_2H_6$ 가스를 혼합하여 증착하게 되는데 $SiH_4$, 가스와 $H_2$ 가스의 혼합비는 1:20, $B_2H_6$ 농도는 0.5%로 고정 하였으며 $N_2O$의 flow rate을 가변하며 증착하였다. $N_2O$의 가변조건은 5에서 50sccm으로 가변하여 증착하며 일반적으로 사용되는 RF-PECVD (13.56MHz)를 이용하였고 증착 온도는 175도, 전극간의 거리는 40mm, 파워와 압력은 30W, 700mTorr로 고정하여 진행하였다. 전기적 특성을 알아보기 위해 eagle 2000 Glass를 사용하였고 구조적 특성은 p-type wafer를 사용하여 각각 대략 200nm의 두께로 증착하였다. 증착 두께는 Ellipsometry를 이용하였으며 전기 전도도는 Agilent사의 4156c를 구조적특성은 FT-IR을 사용하여 측정하였다. Conductivity(${\sigma}_d$)는 $N_2O$가 증가함에 따라 $8.73\;{\times}\;10^{-6}$에서 $5.06\;{\times}\;10^{-7}$으로 감소하였고 optical bandgap ($E_{opt}$)은 1.71eV에서 2.0eV로 증가함을 알 수 있었다. 또한 reflective index(n)의 경우는 4.32에서 3.52로 감소함을 나타내었다. 기존의 p-type a-Si:H에 비해 상당한 $E_{opt}$을 가지므로 빛 흡수에 의한 손실을 줄임으로서 $V_oc$를 향상 시킬 수 있으며 동시에 짧은 파장에서의 입사광이 직접 i층을 비추므로 $I_{sc}$와 FF를 향상 시킬 수 있으리라 예상된다. 다소 낮은 전도도만 개선한다면 고효율의 박막 태양전지를 제작 할 수 있을 것으로 기대된다.

• The Korean Journal of Ceramics
• /
• v.5 no.2
• /
• pp.115-118
• /
• 1999

Carbon composites with $MoSi_2$ dispersion were prepared by hot-pressing at $1700^{\circ}C$ under 30 MPa for 1 h using polysilazance as binding material. The composites consisted of C, $Mo_{4.8}Si_3C_{0.6}$ and SiC. Bulk density and porosity of the carbon composites with 10 vol% $MoSi_2$ was 1.8g.$\textrm{cm}^{-3}$ and 34%, respectively. This composite was oxidized about 0.05mm from the surface of the carbon composite after oxidation test at $1500^{\circ}C$ for 10h in air. Formation of the $SiO_2$ glass layer was observed by SEM. When this composite suffered damage in the coating layer, it had hardly farther oxidation because of its self-repairing property. The composite prepared in this study indicated good oxidation resistance.

• Korean Journal of Materials Research
• /
• v.31 no.11
• /
• pp.642-648
• /
• 2021

The precipitation effect of Al-6%Si-0.4%Mg-0.9%Cu-(Ti) alloy (in wt.%) after various heat treatments was studied using a laser flash device (LFA) and differential scanning calorimetry (DSC). Solid solution treatment was performed at 535 ℃ for 6 h, followed by water cooling, and samples were artificially aged in air at 180 ℃ and 220 ℃ for 5 h. The titanium-free alloy Al-6%Si-0.4%Mg-0.9%Cu showed higher thermal diffusivity than did the Al-6%Si-0.4%Mg-0.9%Cu-0.2%Ti alloy over the entire temperature range. In the temperature ranges below 200 ℃ and above 300 ℃, the value of thermal diffusivity decreased with increasing temperature. As the sample temperature increased between 200 ℃ and 400 ℃, phase precipitation occurred. From the results of DSC analysis, the temperature dependence of the change in thermal diffusivity in the temperature range between 200 ℃ and 400 ℃ was strongly influenced by the precipitation of θ'-Al₂Cu, β'-Mg₂Si, and Si phases. The most important factor in the temperature dependence of thermal diffusivity was Si precipitation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.521-524
• /
• 2001

In this letter. we report on the investigation of Ti. Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at $500^{\circ}C$ for 1h. $950^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method. which resulted in specific contact resistivities in the $3.5{\times}10^{-3}$ and $6.2{\times}10^{-4}ohm/cm^{2}$, and the physical properties of the contacts were examined using x-ray diffraction. microscopy. AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si. migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1555-1558
• /
• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}c$-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_4$ Concentration$[F(SiH_4)/F(SiH_4)+F(H_2)]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c$-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c$-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_2H_6$ to $SiH_4$ gas. The solar cells with structure of Al/nip ${\mu}c$-Si:H/TCO/glass was fabricated with sing1e chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.