Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Low Temperature Deposition of Microcrystalline Silicon Thin Films for Solar Cells

태양전지용 미세결정 실리콘 박막의 저온 증착

  • Lee, J.C. (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Yoo, J.S. (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Kang, K.H. (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Kim, S.K. (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Yoon, K.H. (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Song, J. (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Park, I.J. (Photovoltaic Research Team, Korea Institute of Energy Research)
  • 이정철 (한국에너지기술연구원, 태양광발전 연구팀) ;
  • 유진수 (한국에너지기술연구원, 태양광발전 연구팀) ;
  • 강기환 (한국에너지기술연구원, 태양광발전 연구팀) ;
  • 김석기 (한국에너지기술연구원, 태양광발전 연구팀) ;
  • 윤경훈 (한국에너지기술연구원, 태양광발전 연구팀) ;
  • 송진수 (한국에너지기술연구원, 태양광발전 연구팀) ;
  • 박이준 (한국에너지기술연구원, 태양광발전 연구팀)
  • Published : 2002.07.10
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Abstract

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}c$-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_4$ Concentration$[F(SiH_4)/F(SiH_4)+F(H_2)]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c$-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c$-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_2H_6$ to $SiH_4$ gas. The solar cells with structure of Al/nip ${\mu}c$-Si:H/TCO/glass was fabricated with sing1e chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

Keywords