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http://dx.doi.org/10.4191/KCERS.2002.39.5.479

Optical Properties and Structural Analysis of SiO2 Thick Films Deposited by Plasma Enhanced Chemical Vapor Deposition  

Cho, Sung-Min (Department of Advanced Materials Engineering, Sungkyunkwan University)
Kim, Yong-Tak (Department of Advanced Materials Engineering, Sungkyunkwan University)
Seo, Yong-Gon (Optical Telecommunication Research Center, Korea Electronics Technology Institute)
Yoon, Hyung-Do (Optical Telecommunication Research Center, Korea Electronics Technology Institute)
Im, Young-Min (Optical Telecommunication Research Center, Korea Electronics Technology Institute)
Yoon, Dae-Ho (Department of Advanced Materials Engineering, Sungkyunkwan University)
Publication Information
Abstract
Silicon dioxide thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition(PECVD) method, at a low temperature ($320^{\circ}$C) and from $(SiH_4+N_2O)$ gas mixtures. The effects of deposition parameters on properties of $SiO_2$ thick films were investigated by variation of $N_2O/SiH_4$ flow ratio and RF power. After the deposition process, the samples were annealed in a furnace at $1150^{\circ}$C, in N2 atmosphere, for 2h. As the $N_2O/SiH_4$ flow ratio increased, deposition rate decreased from 9.4 to 2.9 ${\mu}m/h$. As the RF power increased, deposition rate increased from 4.7 to 6.9 ${\mu}m/h$. The thickness and the refractive index measurements were measured by prism coupler. X-ray Photoelectron Spectroscopy(XPS) and Fourier Transform-infrared Spectroscopy(FT-IR) were used to determine the chemical states. The cross-section of films was observed by Scanning Electron Microscopy(SEM).
Keywords
PECVD; Optical waveguide; Silicon dioxide; PLC;
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Times Cited By KSCI : 1  (Citation Analysis)
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