Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Low resistivity ohmic Pt/Si/Ti contacts to p-type 4H-SiC

Pt/Si/Ti P형 4H-SiC 오옴성 접합에서 낮은 접촉 저항에 관한 연구

  • 양성준 (순천향대학교 정보기술공학부) ;
  • 이주헌 (순천향대학교 정보기술공학부) ;
  • 노일호 (순천향대학교 정보기술공학부) ;
  • 김창교 (순천향대학교 정보기술공학부) ;
  • 조남인 (선문대학교 전자공학과) ;
  • 정경화 (선문대학교 전자공학과) ;
  • 김은동 (한국전기연구원) ;
  • 김남균 (한국전기연구원)
  • Published : 2001.11.08
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Abstract

In this letter. we report on the investigation of Ti. Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at $500^{\circ}C$ for 1h. $950^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method. which resulted in specific contact resistivities in the $3.5{\times}10^{-3}$ and $6.2{\times}10^{-4}ohm/cm^{2}$, and the physical properties of the contacts were examined using x-ray diffraction. microscopy. AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si. migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

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