• 제목/요약/키워드: Short circuit protection

검색결과 138건 처리시간 0.026초

Rogowski Coil 기반의 전류 센싱 회로를 적용한 SiC MOSFET 단락 보호 회로 설계 (Short-circuit Protection Circuit Design for SiC MOSFET Using Current Sensing Circuit Based on Rogowski Coil)

  • 이주아;변종은;안상준;손원진;이병국
    • 전력전자학회논문지
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    • 제26권3호
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    • pp.214-221
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    • 2021
  • SiC MOSFETs require a faster and more reliable short-circuit protection circuit than conventional methods due to narrow short-circuit withstand times. Therefore, this research proposes a short-circuit protection circuit using a current-sensing circuit based on Rogowski coil. The method of designing the current-sensing circuit, which is a component of the proposed circuit, is presented first. The integrator and input/output filter that compose the current-sensing circuit are designed to have a wide bandwidth for accurately measuring short-circuit currents with high di/dt. The precision of the designed sensing circuit is verified on a double pulse test (DPT). In addition, the sensing accuracy according to the bandwidth of the filters and the number of turns of the Rogowski coil is analyzed. Next, the entire short-circuit protection circuit with the current-sensing circuit is designed in consideration of the fast short-circuit shutdown time. To verify the performance of this circuit, a short-circuit test is conducted for two cases of short-circuit conditions that can occur in the half-bridge structure. Finally, the short-circuit shutdown time is measured to confirm the suitability of the proposed protection circuit for the SiC MOSFET short-circuit protection.

IGBT 인버터를 위한 향상된 단락회로 보호기법 (An Improved Short Circuit Protection Scheme for IGBT Inverters)

  • 서범석;현동석
    • 전력전자학회논문지
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    • 제3권4호
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    • pp.426-436
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    • 1998
  • Identification of fault current during the operation of a power semiconductor switch and activation of suitable remedial actions are important for reliable operation of power converters. A short circuit is a basic and severe fault situation in a circuit structure such as voltage source converters. This paper presents a new active protection circuit for fast and precise clamping and safe shutdown of fault currents of the IGBTs. This circuit allows operation of the IGBTs with a higher on-state gate voltage, which can thereby reduce the conduction loss in the device without compromising the short circuit protection characteristics. The operation of the circuit is studied under various conditions, considering variation of temperature, rising rate of fault current, gate voltage value, and protection circuit parameters. An evaluation of the operation of the circuit is made using IGBTs from different to confirm the effectiveness of the protection circuit.

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Short-Circuited Stub를 이용한 RF회로에서의 정전기 방지 (On-chip ESD protection design by using short-circuited stub for RF applications)

  • 박창근;염기수
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2002년도 춘계종합학술대회
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    • pp.288-292
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    • 2002
  • RF 회로에 적합한 새로운 형태의 on-chip ESD protection 방법을 제시하였다. RF 회로의 특성을 이용하여 DC blocking capacitor 앞에 short-circuited stub를 달아서 ESD 소자로 활용하였다. 특히 short-circuited stub를 매칭 회로의 일부로 사용하여 stub의 길이를 줄일 수 있다. 또한 short-circuited stub의 width와 metal의 성분으로 ESD threshold voltage를 쉽게 예측 가능하다. 기존의 ESD 방지 회로와 달리 RF 회로를 위한 ESD 방지 회로에서 문제시되던 기생 capacitance 성분에 대한 문제점을 해결 할 수 있었다.

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Short-circuit Protection for the Series-Connected Switches in High Voltage Applications

  • Tu Vo, Nguyen Qui;Choi, Hyun-Chul;Lee, Chang-Hee
    • Journal of Power Electronics
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    • 제16권4호
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    • pp.1298-1305
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    • 2016
  • This paper presents the development of a short-circuit protection mechanism on a high voltage switch (HVS) board which is built by a series connection of semiconductor switches. The HVS board is able to quickly detect and limit the peak fault current before the signal board triggers off a gate signal. Voltage clamping techniques are used to safely turn off the short-circuit current and to prevent overvoltage of the series-connected switches. The selection method of the main devices and the development of the HVS board are described in detail. Experimental results have demonstrated that the HVS board is capable of withstanding a short-circuit current at a rated voltage of 10kV without a di/dt slowing down inductor. The corresponding short-circuit current is restricted to 125 A within 100 ns and can safely turn off within 120 ns.

백열전구를 이용한 학습 교구용 단락보호장치에 대한 고찰 (A Study on the Short-circuit Protection System for Learning Teaching Instruction Using Incandescent Light Bulb)

  • 김홍용
    • 한국재난정보학회 논문집
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    • 제19권4호
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    • pp.844-850
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    • 2023
  • 연구목적: 본 논문은 백열전구를 이용하여 단락보호 전원공급 장치를 개발하고, 이를 학습 교구로 활용하는 연구에 관한 것이다. 전기 안전과 에너지 절약을 동시에 고려한 이 연구는 교육과 산업 분야에서 중요한 응용 가능성을 가지고 있다. 백열전구를 활용한 단락보호 전원공급 장치는 기존의 전원공급 장치와 비교하여 안전성과 효율성을 향상시키는데 도움이 되며, 학습 교구로 학습자들에게 전기 안전 교육을 제공함으로써 실생활에서의 전기 안전 지식을 습득하는데 기여한다. 연구방법: 백열전구를 사용하여 단락보호 전원공급 장치를 개발하고 개발된 장치의 성능 평가 및 안전성 확인을 통해 학습 교구로 활용할 수 있는 새로운 전원공급장치를 제작 한다. 결론:백열전구를 활용한 단락보호 전원공급 장치의 개발과 학습 교구로의 응용 가능성을 탐구한 연구이다. 이를 통해 전기 안전과 에너지 절약에 기여할 수 있는 혁신적인 솔루션을 제시하였으며, 교육 분야와 산업 분야에서의 응용 가능성을 열어놓았다. 이러한 연구는 전기 안전 및 에너지 관리 분야에서의 연구와 교육에 기여할 것으로 기대된다.

지/단락실증시험에서 MW급 계통연계형 ESS 절연/보호시스템 성능 분석에 관한 연구 (Analysis on Insulation and Protection Characteristics of Grid Connected ESS in Ground/Short-Circuit Fault)

  • 김진태;이승용;박상진;차한주;김수열
    • KEPCO Journal on Electric Power and Energy
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    • 제6권2호
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    • pp.119-122
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    • 2020
  • With recent ESS (Energy Storage System) fire accident, the fault protection performance is becoming more important. However, there has never been any experiments with the protection performance on the faults in the ESS system level. In this study, the effect of AC ground fault and IGBT (Insulated Gate Bipolar mode Transistor) short-circuit failure on MW class ESS was performed experimentally for the first time in the world. First of all, the effect of the AC single line ground fault on battery was analyzed. Moreover, the transient voltage was investigated as a function of the battery capacity and the power level. Finally, the breaking capability and insulation performance of ESS were examined under PCS short-circuit fault condition. Through the tests, it was found that ESS protection system safely blocked the faulty current regardless of the faults, whereas the electronic parts such as IGBT and MC (Magnetic Contactor) were broken by the fault current. Also, the electrical breakdown in ESS resulted from the transient voltage during the protection process.

IEC 표준에 의한 고장전류 계산과 보호협조 (Fault Current Calculation and Coordination by IEC Standards)

  • 손석금
    • 조명전기설비학회논문지
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    • 제28권12호
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    • pp.6-12
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    • 2014
  • The safety and reliability of the power system short-circuit current, the short-circuit current depends on the failure to obtain the objective is to quickly eliminate the breaking capacity of the circuit-breaker selection of the cable, the insulation of electrical equipment and protective relay an important factor in determining the level correction and protective relay selection scheme to be meaningful. Standards used in the domestic circuit breaker is applied to the production of IEC standard, but the American National Standards (ANSI / IEEE) by NEMA specification of the fault current calculations and the application of the asymmetric coefficient Korea. Therefore, in this paper, the IEC 60909 standard IEC breaker fault current calculation method and the method for selection of system configurations reviewed and protection system for reviewing the configuration of various protective relays appropriate correction and the correction value is main protection, back-up protection the equipment so that the period of protection relay coordination to minimize accidents and accident protection to minimize interruptions proposed for cooperation.

Fault Detection 기능을 갖는 이오나이저 모듈용 게이트 구동 칩 설계 (Design of Gate Driver Chip for Ionizer Modules with Fault Detection Function)

  • 김홍주;하판봉;김영희
    • 전기전자학회논문지
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    • 제24권1호
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    • pp.132-139
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    • 2020
  • 공기청정기에 사용되는 이오나이저 모듈은 권선형 transformer를 사용하여 방전전극인 HV+/HV-에 3.5KV/-4KV의 고전압을 공급하여 carbon fiber brush의 전계 방사에 의해 양이온과 음이온을 발생시킨다. 기존의 MCU를 이용한 이오나이저 모듈 회로는 PCB 사이즈가 크고 가격이 비싼 단점이 있고, 기존의 ring oscillator를 이용한 게이트 구동 칩은 oscillation 주기가 PVT(Process-Voltage-Temperature) 변동에 민감하고 HV+와 GND, HV-와 GND의 단락에 의한 fault detection 기능이 없으므로 화재나 감전의 위험이 있다. 그래서 본 논문에서는 7bit binary UP counter를 이용하여 PVT 변동이 있더라도 oscillation 주기를 조절하여 HV+ 전압이 목표 전압에 도달하게 한다. 그리고 HV+와 GND 사이의 단락을 검출하기 위한 HV+ short fault detection 회로, HV-와 GND 사이의 단락을 검출하기 위한 HV- short fault detection 회로와 HV+가 과전압 이상으로 올라가는 것을 검출하기 위한 OVP(Over-Voltage Protection) 회로를 새롭게 제안하였다.

대용량 이차전지 보호 시스템용 전류 감지 동작형 보호소자의 저융점 금속 가용체 설계 (Design of Low-Melting Metal Fuse Elements of Current Sensing Type Protection Device for Large Capacity Secondary Battery Protection System)

  • 김은민;강창룡
    • 한국전기전자재료학회논문지
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    • 제31권6호
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    • pp.427-432
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    • 2018
  • High-capacity secondary batteries can cause explosion hazards owing to microcurrent variations or current surges that occur in short circuits. Consequently, complete safety cannot be achieved with general protection that is limited to a mere current fuse. Hence, in the case of secondary batteries, it is necessary for the protector to limit the inrush current in a short circuit, and to detect the current during microcurrent variations. To serve this purpose, a fuse can be employed for the secondary battery protection circuit with current detection. This study aims at designing a protection device that can stably operate in the hazardous circumstances associated with high-capacity secondary batteries. To achieve the said objective, a detecting fuse was designed from an alloy of low melting point elements for securing stability in abnormal current states. Experimental results show that the operating I-T and V-T characteristic constraints can be satisfied by employing the proposed current detecting self-contained low melting point fuse, and through the resistance of the heating resistor. These results thus verify that the proposed protection device can prevent the hazards of short circuit current surges and microcurrent variations of secondary batteries.