• The Korean Journal of Pharmacology
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• v.27 no.2
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• pp.99-108
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• 1991

The effect of racemic Ketamine HCl was observed on excitable membranes of sciatic nerve fibres and toe muscles from frog. Ketamine significantly depressed the amplitude of the action potential, maximum rate of rise and that of fall of action potentials of sciatic nerve by dose-dependent and time-course manner, and also it produced the inhibition of $K^+-contracture$ in toe muscle. We used two different ways of sucrose gap method to to obtain the better results from sciatic nerve. We observed and compared the effect of ketamine on sciatic nerve with naloxone, 4-AP (4-aminopyridine) and TEA (Tetraethylammonium). Naloxone significantly but not totally blocked the effect of ketamine both on nerve and on skeletal muscle. 4-AP or TEA by itself had a significant depressant effect on the action potentials on nerve by central perfusion (extracellular perfusion), but both of these drugs did not much affect the action of Ketamine on nerve. The reversibility of effect of Ketamine (10 mM) was observed both on nerve and on skeletal muscles when exposed to drug for short duration. The effects of racemic ketamine described may provide to support that one of the mechanisms of the action of Ketamine on nerve and on muscles of frog might be related to non-specifically effect on receptors within the ion channels $(K^+-channel,\;Na^+-channel\;or\;slow\;Ca^{++}\;channel)$ at higher dose which produces anesthetic effect and also it interacts specifically with one of the opioid receptors or subtype of these receptors which is sensitive to Naloxone at lower dose which produces analgesia.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.139-142
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• 2013

Silicon nanowire (SiNW) silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices were fabricated and their electrical characteristics were analyzed. Compared to planar SONOS devices, these SiNW SONOS devices have good program/erase (P/E) characteristics and a large threshold voltage ($V_T$) shift of 2.5 V in 1ms using a gate pulse of +14 V. The devices also show excellent immunity to short channel effects (SCEs) due to enhanced gate controllability, which becomes more apparent as the nanowire width decreases. This is attributed to the fully depleted mode operation as the nanowire becomes narrower. 3D TCAD simulations of both devices show that the electric field of the junction area is significantly reduced in the SiNW structure.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.8 no.7
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• pp.2212-2230
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• 2014

Cognitive radio (CR) users, known as secondary users (SUs), should avoid interference with primary users (PUs) who own the licensed band, while trying to access it; when the licensed band is unused by the PUs. To detect PUs, spectrum sensing should be performed over in-band channels that are currently in use by SUs. If PUs return to access the band, SUs need to vacate it, disrupting the SUs' communication unless a non-utilized band is discovered. Obtaining a non-utilized band in a short period facilitate seamless communication for SUs and avoid interference on PUs by vacating from the channel immediately. Searching for a non-utilized band can be done through proactive out-of-band (OB) sensing. In this paper, we suggest a proactive OB sensing scheme that minimizes the time required to discover a non-utilized spectrum in order to continue communication. Although, the duration spent on OB sensing reduces the throughput of the CR networks that can be achieved on band being utilized, the lost throughput can be compensated in the new discovered band. We demonstrate that, the effect of our proposed scheme on the throughput owing to OB sensing is insignificant, while exhibiting a very short channel discovery time.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.879-882
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• 2015

In this work, we have analyzed the characteristics of vertical nanowire GAA MOSFET according to channel width and the type of channel doping through the simulation. First, we compared and analyzed the characteristics of designed structures which have tilted shapes that ends of drains are fixed as 20nm and ends of sources are 30nm, 50nm, 80nm and 110nm. Second, we designed the rectangular structure which has uniform width of drain, channel and source as 50nm. We used it as a standard and designed trapezoidal structure which is tilted so that the end of drain became 20nm and reverse trapezoidal structure which is tilted so that the end of source became 20nm. We compared and analyzed the characteristic of above three structures. For the last, we used the rectangular structure, divided its channel as five parts and changed the type of the five parts of doping concentration variously. In the first simulation, when the channel width is the shortest, in the second, when the structure is trapezoid, in the third, when the center of channel is high doped show the best characteristics.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.4
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• pp.747-752
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• 2009

Three dimensional(3D) Poisson's equation is used to calculate the potential variation for FinFET in the channel to analyze subthreshold current and short channel effect(SCE). The analytical model has been presented to lessen calculating time and understand the relationship of parameters. The accuracy of this model has been verified by the data from 3D numerical device simulator and variation for dimension parameters has been explained. The model has been developed to obtain channel potential of FinFET according to channel doping and to calculate subthreshold current and threshold voltage.

• Journal of Electrical Engineering and Technology
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• v.3 no.4
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• pp.566-570
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• 2008

Vertical nanowire SGFETs(Surrounding Gate Field Effect Transistors) provide full gate control over the channel to eliminate short channel effects. This paper presents design and characterization of a differential pair amplifier using NMOS and PMOS SGFETs with a 10nm channel length and a 2nm channel radius. The amplifier dissipates $5{\mu}W$ power and provides 5THz bandwidth with a voltage gain of 16, a linear output voltage swing of 0.5V, and a distortion better than 3% from a 1.8V power supply and a 20aF capacitive load. The 2nd and 3rd order harmonic distortions of the amplifier are -40dBm and -52dBm, respectively, and the 3rd order intermodulation is -24dBm for a two-tone input signal with 10mV amplitude and 10GHz frequency spacing. All these parameters indicate that vertical nanowire surrounding gate transistors are promising candidates for the next generation high speed analog and VLSI technologies.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.579-582
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• 2008

Three dimensional(3D) Poisson's equation is used to calculate the potential variation in the channel to analyze subthreshold current and short channel effect(SCE). The analytical model has been presented to lessen calculating time and understand the relationship of parameters. The accuracy of this model has been verified by the data from 3D numerical device simulator and variation for dimension and process parameters has been explained. The model has been developed to obtain channel potential of FinFET according to channel doping and to calculate subthreshold current and threshold voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.16-23
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• 2007

For a fully depleted SOI type symmetric double gate MOSFET, a simple expression for the threshold voltage has been derived in a closed-form To solve analytically the 2D Poisson's equation in a silicon body, the two-dimensional potential distribution is assumed approximately as a polynomial of fourth-order of x, vertical coordinate perpendicular to the silicon channel. From the derived expression for the surface potential, the threshold voltage can be obtained as a simple closed-form. Simulation result shows that the threshold voltage is exponentially dependent on channel length for the range of channel length up to $0.01\;[{\mu}m]$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.887-890
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• 2005

The double gate(DG) MOSFET is a promising candidate to further extend the CMOS scaling and provide better control of short channel effect(SCE). DGMOSFETs, having ultra thin updoped Si channel for SCEs control, are being validated for sub-20nm scaling, A channel effects such as the subthreshold swing(SS), and the threshold voltage roll-off(${\Delta}V_{th}$). The propsed model includes the effects of thermionic emission and quantum tunneling of carriers through the source-drain barrier. The proposed model is used to design contours for gate length, channel thickness, and gate oxide thickness.

• Journal of The Geomorphological Association of Korea
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• v.26 no.3
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• pp.1-17
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• 2019

Naeseongcheon is Korea's representative sand stream, and it is one of the regions where the dynamic changes of various river topography developed in the sand bed can be observed. Most of drainage area near of the river channel are formed with Daebo granite, and the granite weathering zone is developed at the surface of hill. Due to the massive input of sediment flux, braided channel reaches are found some of the area. However, the results of the study shows that the alluvial layer is very thin in some reaches. In addition, bedrock or weathered materials, including the Tors are exposed at the channel beds. On the other hand, during the flood, a considerable amount of sediment was introduced, causing the massive sediment to be close to 1m thick. In addition, despite the short distance, large changes in the particle size and sorting of the sediment were observed. Vegetation, on the other hand, has been shown to have a significant effect on the development of the overall channel bed topography, as reported in previous studies. In small floods or low water levels, vegetation's protection role of the surface is predominates, but in large flood conditions, herbaceous loss at the surface of the point bars, accelerating the erosion of surface.