Browse > Article

A simple analytical model for deriving the threshold voltage of a SOI type symmetric DG-MOSFET  

Lee, Jung-Ho (School of Electronic & Electrical Eng., Hongik Univ.)
Suh, Chung-Ha (School of Electronic & Electrical Eng., Hongik Univ.)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.44, no.7, 2007 , pp. 16-23 More about this Journal
Abstract
For a fully depleted SOI type symmetric double gate MOSFET, a simple expression for the threshold voltage has been derived in a closed-form To solve analytically the 2D Poisson's equation in a silicon body, the two-dimensional potential distribution is assumed approximately as a polynomial of fourth-order of x, vertical coordinate perpendicular to the silicon channel. From the derived expression for the surface potential, the threshold voltage can be obtained as a simple closed-form. Simulation result shows that the threshold voltage is exponentially dependent on channel length for the range of channel length up to $0.01\;[{\mu}m]$.
Keywords
SOI(Silicon On Insulator); DG MOSFET; threshold voltage analysis; short channel effect;
Citations & Related Records
연도 인용수 순위
  • Reference
1 S. P. Sinha, A. Zaleski, D. E. Ioannou, 'Investigation of carrier generation in fully depleted enhancement and accumulation model SOI MOSFET's,' IEEE Trans. Electron Devices, vol. 42, no. 12, pp. 2413 - 2416, Dec. 1994
2 Ni. Pei, Weiping A. V. Kammula, B. A. Minch, E. C. Kan, 'A physical compact model of DG MOSFET for mixed-signal circuit applicationspart I : model description,' IEEE Trans. Electron Devices, vol. 51, no. 12, pp. 2135 - 2143, Dec. 2004
3 Weimin Zhang, Fossum, J. G, Mathew, L, Yang Du, 'Physical insights regarding design and performance of independent-gate FinFETs,' IEEE Trans. Electron Devices, vol. 52, no. 10, pp. 2198 - 2206, Oct. 2005   DOI   ScienceOn
4 Yu Tian, Ru Huang, Xing Zhang, Yangyuan Wang, 'A novel nanoscaled device concept: quasi-SOI MOSFET to eliminate the potential weaknesses of UTB SOI MOSFET,' IEEE Trans. Electron Devices, vol. 52, no. 4, pp. 561-568, Apr. 2005   DOI   ScienceOn
5 Ge. Lixin, J. G. Fossum, 'Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs,' IEEE Trans. Electron Devices, vol. 49, no. 2, pp. 287 - 294, Feb. 2002   DOI   ScienceOn
6 K. N. Ratnakumer, J. D. Meindle, 'Short-channel MOST threshold Voltage Model,' IEEE J. of Solid-state Circuits, vol. SC-17, pp. 937-947, Oct. 1982
7 S. Satoh, H. Oka, N. Noriaki, 'Bipolar circuit simulation system using two-dimensional simulator,' Fujitsu Sci. Tech. J., vol. 24, pp. 456 -463, 1988
8 A. Ortiz-Conde, F. J. Garcia-Sanchez, S. Malobabic, 'Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs,' IEEE Trans. Electron Devices, vol. 52, no. 7, pp. 1669 - 1672, Jul. 2005   DOI   ScienceOn
9 T. J. Cunningham, R. C. Gee, E. R. Fossum, S. M. Baier, 'Deep cryogenic noise and electrical characterization of the complementary heterojunction field-effect transistor (CHFET),' IEEE Trans. Electron Device Letters, vol. 41, no. 6, pp. 888–894, Nov. 1994
10 K. W. Terrill, C. U. Hu, P. K. Ko, 'An Analytical Model for the Channel Electric Field in MOSFET's with Graded-Drain Structures,' IEEE Trans. Electron Device Letters, vol. 5, no. 11, pp. 440–442, Nov. 1984
11 A. Svizhenko, M. P. Anantram, T. R. Govindan, B. Biegel, 'Two-Dimensional Quantum Mechanical Modeling of Nanotransistors,' J. Appl. Phys., vol. 91, no. 4, pp. 2343 - 2354, Nov. 2002   DOI   ScienceOn
12 K. K. Young, 'Short-channel effect in fully depleted SOI MOSFETs,' IEEE Trans. Electron Devices, vol. 36, no. 2, pp. 399 - 402, Feb. 1989   DOI   ScienceOn
13 K. Suzuki, Y. Tosaka, T. Sugii, 'Analytical Threshold Voltage Model for Short Channel Double-Gate SO1 MOSFET's,' IEEE Trans. Electron Devices, vol. 43, no. 7, pp. 1166 - 1168, Jul. 1996   DOI   ScienceOn
14 Y. Omura, 'A simple model for short-channel effects of a buried-channel MOSFET on the buried insulator,' IEEE Trans. Electron Devices, vol. 29, no. 11, pp. 1749–1755, Nov. 1982
15 A. Dasgupta, S. K. Lahiri, 'A two-dimensional analytical model of threshold voltages of short-channel MOSFETs with Gaussian-doped channels,' IEEE Trans. Electron Devices, vol. 35, no. 3, pp. 390–392, Mar. 1988