• Journal of the Korean Society for Precision Engineering
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• v.11 no.2
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• pp.173-181
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• 1994

A Cold spot temperature control system for the batch annealing furnace has been estabilished in order to reduce energy consumption to improve productivity and stabilize the propertics of products. Therefore we confirmed a relation between annealing cycle time and atmospheric gas, variation of coil cold spot temperature with time during heating and actual temperature measurements at mid-width of each coil during heating and actual temperature measurements at mid-width of each coil during soaking. The results of the tempaeature variation effect on the batch annealing are as follows. 1) Heating time is reduced to one half with increasing atmospheric gas flow rate and changing of atmospheric gas component from HNx to Ax gas, and annealing cycle time is reduced to 2.7 times. 2) In case of short time healing, the slowest heating part is the center of B coil, in case of long time heating, the low temperature point moves from the center of coil to inside coil. And the temperature in this part is higher than other parts when cooling. When finished heating, the cold spot is located 1/3 of coil inside in case of HNx atmospheric gas. But center of coil in case of Ax atmospheric gas. 3) The outside of top coil is the highest temperature point when heating, which becomes the lowest temperature point when cooling. So, this point becomes high temperature zone at heating and low temperature zone at cooling, It has relation according to atmospheric gas component and flow rate. 4) Soaking time at batch annealing cycle determination is made a decision by the input coil width, and soaking time for quality homogenization of 1214mm width coil must be 2.5 hours longer than that of 914mm width coil for the same ciol weight. 5) Annealing cycle time with Ax atmospheric gas is extended 1 hour in of slow cooling during 5 hours in order to avoid rapid cooling.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.2
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• pp.75-79
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• 2017

Honeycomb-shaped Ag-grid transparent conductive electrodes (TCEs) were fabricated using two different processes, high density plasma etching and lift-off, and the optical and electrical properties were compared according to the fabrication method. For the fabrication of the Ag-grid TCEs by plasma etching, etch characteristics of the Ag thin film in $10CF_4/5Ar$ inductively coupled plasma (ICP) discharges were studied. The Ag etch rate increased as the power increased at relatively low ICP source power or rf chuck power conditions, and then decreased at higher powers due to either decrease in $Ar^+$ ion energy or $Ar^+$ ion-assisted removal of the reactive F radicals. The Ag-grid TCEs fabricated by the $10CF_4/5Ar$ ICP etching process showed better grid pattern transfer efficiency without any distortion or breakage in the grid pattern and higher optical transmittance values of average 83.3 % (pixel size $30{\mu}m/line$ width $5{\mu}m$) and 71 % (pixel size $26{\mu}m/line$ width $8{\mu}m$) in the visible range of spectrum, respectively. On the other hand, the Ag-grid TCEs fabricated by the lift-off process showed lower sheet resistance values of $2.163{\Omega}/{\square}$ (pixel size $26{\mu}m/line$ width $18{\mu}m$) and $4.932{\Omega}/{\square}$ (pixel size $30{\mu}m/line$ width $5{\mu}m$), respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Journal of Advanced Marine Engineering and Technology
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• v.37 no.5
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• pp.510-519
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• 2013

In this study, the spray characteristics of a pressure swirl atomizer classified into a liquid sheet-type swirl nozzle for Urea-SCR system were investigated experimentally with the variation of injection pressure. The length to diameter ratio ($l_o/d$) of the nozzle was 3.1, and the swirler was set inside the nozzle tip to give injecting fluid angular momentum. The injection duration of the nozzle was controlled by PWM (pulse width modulation) modes. The development processes of the spray were imaged by a 2-D PIV system, and the change of spray angle was measured. The atomization characteristics, including axial velocity and SMD, were measured using a 2-D PDA system with the injection pressures at room temperature and ambient pressure conditions. As the experimental results, the injection pressure had a significant impact on the spray structure showing a different shape around the spray leading edge, and the smaller SMD was observed with increasing injection pressures, which was similar to that of the previous work.

• Journal of IKEEE
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• v.17 no.1
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• pp.71-76
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• 2013

AlGaN/GaN HEMTs (High electron mobility transistors) with narrow channel were fabricated and the effect of channel scaling on the device were investigated. The devices were fabricated using e-beam lithography to have same channel length of $1{\mu}m$ and various channel width from 0.5 to $9{\mu}m$. The sheet resistance of the channel was increased corresponding to the decrease of channel width and the increase was larger at the width of sub-${\mu}m$. The threshold voltage of the HEMT with $1.6{\mu}m$ and $9{\mu}m$ channel width was -2.85 V. The transistor showed a variation of 50 mV at the width of $0.9{\mu}m$ and the variation 350 mV at $0.5{\mu}m$. The transconductance of 250 mS/mm was decreased to 150 mS/mm corresponding to the decrease of channel width. Also, the gate leakage current of the HEMT decreased with channel width. But the degree of was reduced at the width of sub-${\mu}m$. It was thought that the variation of the electrical characteristics of the HEMT corresponding to the channel width came from the reduced Piezoelectric field of the AlGaN/GaN structure by the strain relief.

• Journal of the Korea institute for structural maintenance and inspection
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• v.20 no.1
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• pp.112-117
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• 2016

For artificial ground greening construction without root-proofing layer, this research reviewed the effect on watertightness of asphalt waterproofing layer by plant roots penetration based on crack width, and crack penetrated roots. Experiment on concrete crack width was performed with three conditions such as 0.15, 0.30, and 0.45 mm, and all three conditions confirmed that all plant roots penetrations were made through crack area in 12 ~ 18 months. In addition, according to evaluation of effects on waterproofing layer by crack penetrated plant roots and in condition of 0.45 mm crack width, it indicated that penetration is made on asphalt waterproofing layer in 12 months due to roots penetration.

• Journal of Sensor Science and Technology
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• v.22 no.1
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• pp.89-94
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• 2013

In this paper, we developed a beam of MEMS probe card using a BeCu sheet. Silicon wafer thickness of $400{\mu}m$ was fabricated by using deep reactive ion etching (RIE) process. After forming through silicon via (TSV), the silicon wafer was bonded with BeCu sheet by soldering process. We made BeCu beam stress-free owing to removing internal stress by using joule heating. BeCu beam was fused by using joule heating caused by high current. The fabricated BeCu beam measured length of 1.75 mm and width of 0.44 mm, and thickness of $15{\mu}m$. We measured fusing current as a function of the cutting planes. Maximum current was 5.98 A at cutting plane of $150{\mu}m^2$. The proposed low-cost and simple fabrication process is applicable for producing MEMS probe beam.

• Journal of Welding and Joining
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• v.34 no.3
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• pp.6-11
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• 2016

Joining Al/Fe dissimilar metals is becoming a subject of special interest in the assembly of automotive parts as a trade-off between the weight lightening and the cost reduction. Although various studies have been introduced to join Al alloy with the steel sheet by fusion welding, weak joint strength and galvanic corrosion still remained as problems to be solved. As a solid state welding, friction stir welding has been preferred to fusion welding processes in the dissimilar metal joints. This study investigated friction stir spot welding (FSSW) of Al alloy to the thin steel sheet with a thickness of 0.65 mm. The conventional FSSW is a stationary spot welding process but new approach adopted an additional circumferential movement in company with high speed tool rotation. A full factorial experimental design was implemented, and the main and interaction effects of parameters were analysed on the failure load in the tensile shear test. The direction and radius of rotation were statistically significant parameters and these two parameters affected the joint width and the shape of the hook.

• Journal of the Korean Society for Nondestructive Testing
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• v.29 no.6
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• pp.591-602
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• 2009

The Compton backscatter technique has been applied to lap-joint in aircraft structure in order to determine mass loss due to exfoliative corrosion of the aluminum alloy sheet skin. The mass loss of each layer has been estimated from Compton backscatter A-scan including the aluminum sheet, the corrosion layer, and the sealant. A Compton backscattering imaging system has been also developed to obtain a cross-sectional profile of corroded lap-splices of aging aircraft using a specially designed slit-type camera. The camera is to focus on a small scattering volume inside the material from which the backscattered photons are collected by a collimated scintillator detector for interpretation of material characteristics. The cross section of the layered structure is scanned by moving the scattering volume through the thickness direction of the specimen. The theoretical model of the Compton scattering based on Boltzmann transport theory is presented for quantitative characterization of exfoliative corrosion through deconvolution procedure using a nonlinear least-square error minimization method. It produces practical information such as location and width of planar corrosion in layered structures of aircraft, which generally cannot be detected by conventional NDE techniques such as the ultrasonic method.

• Journal of the Korea Concrete Institute
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• v.14 no.5
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• pp.668-676
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• 2002

Especially, when orthotropic material such as uni-dierectionally woven Carbon Fiber Sheet, resisting only the unidirectional tension, is used to strengthening bridge deck, the direction and width of the strengthening material should be considered very carefully. Thus, analysis of the failure characteristics and the premature failure mechanism of the strengthened decks based on the test results are required. In this study, the premature failure due to the interface debonding of strengthening material of the strengthened deck slab are inquired into failure mechanism through both experiments results and analyses with prototype strengthened deck specimens using carbon fiber sheet. From the test results, interface debonding of strengthening material is occured at the crack face