• Title/Summary/Keyword: Sharp Interface

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A Basic Study on a Double Deck Train Model (2층열차 차량모델에 대한 기초연구)

  • 김형진;황원주;허현무;강부병;박종희
    • Proceedings of the KSR Conference
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    • 2002.10b
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    • pp.826-833
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    • 2002
  • In recent years, due to the continuous concentration of population and sharp increment of commuters around Seoul metropolitan area, traffic jam has become one of severe problems along with housing in this area. In oder to solve the problem like the one mentioned above, several countries such as Japan, France and so on gradually operate double deck trains as efficient, reliable and comfortable mass transportation systems. However, the double deck train has weak points such as big cross sectional area and high mass center that cause unsafe vehicle running performances and interface problems between the vehicles and infrastructures. Therefore, prior to operate double deck trains on the existing lines, careful investigations should be performed. For these reasons, we have investigated foreign double deck trains and studied the technologies for a double deck train as an alternative way to carry heavy transportation efficiently and comfortably.

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A Numerical Analysis of a Drop Impact on the Liquid Surface (액적의 액막 충돌에 대한 수치해석)

  • Lee, Sang-Hyuk;Hur, Nahm-Keon;Son, Gi-Hun
    • Proceedings of the KSME Conference
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    • 2008.11b
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    • pp.2568-2573
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    • 2008
  • A drop impact on the liquid film/pool generates several phenomena such as the drop floating, bouncing, formation of vortex ring, jetting, bubble entrapment and splashing. These phenomena depend on the impact velocity, the drop size, the drop properties and the liquid film/pool thickness. These parameters can be summarized by four main dimensionless parameters; Weber number, Ohnesorge number, Froude number and non-dimensional film/pool thickness. In the present study, the phenomena of the splashing and bubble entrapment due to the drop impact on the liquid film/pool were numerically investigated by using a Level Set method for the sharp interface tracking of two distinct phases. After the drop impact, the splashing phenomena with the crown formation and spreading were predicted. Under the specific conditions, the bubble entrapment at the base of the collapsing cavity due to the drop impact was also observed. The numerical results were compared to the available experimental data showing good agreements.

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The Analysis of N Component in Thin Oxide Film Thermally Grown by $NH_3$ Oxidation

  • Kim, Young-Cho-;Kim, Chul-Ju-
    • Proceedings of the Materials Research Society of Korea Conference
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    • 1994.05a
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    • pp.165-166
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    • 1994
  • The depth profiles of the as-grown and the annealed NH$_3$ oxide film in NH$_3$(7.5%)/$N_2$ ambient at 45$0^{\circ}C$ are analized . This annealing in the ambient of mixed gases removes the small quantities of N component from the NH$_3$ oxide film. In AES analysis, the NH$_3$ oxidation shows the exact stoichiometry of SiO$_2$ and a sharp slop at SiO$_2$/Si interface.

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MBE growth of topological insulator $Bi_2Se_3$ films on Si(111) substrate

  • Kim, Yong-Seung;Bansa, Namrata;Edrey, Eliav;Brahlek, Mathew;Horibe, Yoichi;Iida, Keiko;Tanimura, Makoto;Li, Guo-Hong;Feng, Tian;Lee, Hang-Dong;Gustafsson, Torgny;Andrei, Eva;Cheong, Sang-Wook;Oh, Seong-Shik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.59-59
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    • 2011
  • We will report atomically sharp epitaxial growth of $Bi_2Se_3$ three-dimensional topological insulator films on Si(111) substrate with molecular beam epitaxy (MBE). It was achieved by employing two step growth temperatures to prevent any formation of second phase, like as $SiSe_2$ clusters, between $Bi_2Se_3$ and Si substrate at the early stage of growth. The growth rate was determined completely by Bi flux and the Bi:Se flux ratio was kept ~1:15. The second-phase-free atomically sharp interface was verified by RHEED, TEM and XRD. Based on the RHEED analysis, the lattice constant of $Bi_2Se_3$ relaxed to its bulk value during the first quintuple layer implying the absence of strain from the substrate. Single-crystalline XRD peaks of $Bi_2Se_3$ were observed in films as thin as 4 QL. TEM shows full epitaxial structure of $Bi_2Se_3$ film down to the first quintuple layer without any second phases. This growth method was used to grow high quality epitaxial $Bi_2Se_3$ films from 3 QL to 3600 QL. The magneto-transport properties of these thin films show a robust 2D surface state which is thickness independent.

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Studies on Chemical and Biological Processes in the Keum River Estuary, Korea 2. Factors controlling chlorophyll-a distribution (금강 하구에서의 화학적, 생물학적 제과정에 관한 연구 II. Chlorlphyll-a 분포 결정 요인에 관하여)

  • 기준학;김정렬
    • 한국해양학회지
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    • v.22 no.3
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    • pp.207-215
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    • 1987
  • The Keum River Estuary was investigated two times in April and July, 1986, to study process controlling chlorophyll distribution in estuarine waters. During the surveys, distribution patterns were studied for chlorophyll-a, nutrients, ph, SPM (Suspended Particulate Matter), DO (Dissolved Oxygen), temperature, salinity, etc. During April survey(low-discharge period), sea water penetrated to Kangkyung, about 35km upstream from the constructing weir, while in July (high-discharge period) only to 3 km upstream from the weir,In April SPM showed very high concentrations (500mg/l)on the average. But very low concentrations(about10mg/l)were observed in July due to high discharge of fresh water.Chlorophyll-a concentrations showed large variations both in time and space :much higher concentraations in July than in April and sharp decrease in concentrations at the fresh water-sea water interface (April:$6.5\mu\textrm{g}/{\ell}$ for fresh waters and 41.4\mu\textrm{g}/{\ell}$ forestuarine waters). Differebce ub chlorophyll-a concentrations for these two surveys appear to be caused mainly by the difference in effectiveness of penetrating lights controlled by SPM in the waters. Sharp decrease in chlorophll-a at the fresh water-sea water interface is believed to be resulted from mass mortality of fresh water phytoplankton caused by changes in osmotic pressure in the region. Observations in the same regions such as increase in AOU(Apparent Oxygen Utilization)and ammonia, decrease in PH,probably resulted through decomposition processes of dead planktons,furtuer support the idea.

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Prevention of P-i Interface Contamination Using In-situ Plasma Process in Single-chamber VHF-PECVD Process for a-Si:H Solar Cells

  • Han, Seung-Hee;Jeon, Jun-Hong;Choi, Jin-Young;Park, Won-Woong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.204-205
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    • 2011
  • In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

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Assessment of a fresh submarine groundwater discharge in eastern Jeju Island using analytic seawater intrusion models (해수침투 해석해 기반 제주 동부 담해저 지하수 유출의 정량적 산정)

  • Kim, Il-Hwan;Chang, Sun Woo
    • Journal of Korea Water Resources Association
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    • v.55 no.12
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    • pp.1011-1020
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    • 2022
  • Previous studies for the assessment of submarine groundwater discharge (SGD) were perfomed for areas where a large amount of SGD was observed. Newly developed assessment methods were proposed that was based on an analytic solution using sharp interface model. The proposed mathematical equations used the existing observed groundwater level and hydrogeological data of Jeju Island as input data. The quantitatively assessed FSGD values were compared to the basin-scale recharge estimation values in Seong-San area in eastern Jeju. As a result of the study, it was estimated that the amount of FSGD in the Seongsan area ranges from about 2.65 to 9.15% of the amount of areal-recharge. Through the analysis of the FSGD combined with the analytic model, it is to be provided as a scientific tool to establish a more reasonable coastal water resource management plan.

Interface Control to get Higher Efficiency in a-Si:H Solar Cell

  • Han, Seung-Hee;Kim, En-Kyeom;Park, Won-Woong;Moon, Sun-Woo;Kim, Kyung-Hun;Kim, Sung-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.193-193
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    • 2012
  • In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.

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TEM Analysis of Interfaces between Cr Film Sputtered with RE Bias and Photosensitive Polyimide (RE 바이어스 스퍼터링한 Cr 박막과 감광성 폴리이미드 사이의 계면 TEM 분석)

  • 조성수;김영호
    • Journal of the Microelectronics and Packaging Society
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    • v.10 no.2
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    • pp.39-47
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    • 2003
  • Cr thin films were deposited on photosensitive polyimide substrates by RF bias sputtering and DC sputtering and the interfaces between Cr thin film and polyimide were observed using TEM. When the polyimide surface was in-situ RF plasma cleaned at the RF power density of 0.13-2.12 $W/cm^2$, increasing of RF power density changed the morphology of polyimide surfaces from round dig to sharp shape, and surface roughness increased by anisotropic etching. The intermixed layer-like interfaces between Cr and polyimide were observed in the RF bias sputtered specimens. This interface seems to be formed due to the RF cleaning effect; the polyimide surface was RF plasma cleaned while RF power was increased to the setting point before Cr deposition.

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Classification of Warm Temperate Vegetation Using Satellite Data and Management System (위성영상을 이용한 난대림 식생 분류와 관리 시스템)

  • 조성민;오구균
    • Korean Journal of Environment and Ecology
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    • v.18 no.2
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    • pp.231-235
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    • 2004
  • Landsat satellite images were analyzed to study vegetation change patterns of warm-temperate forests from 1991 to 2002 in Wando. For this purpose, Landsat TM satellite image of 1991 and Landsat ETM image of 2002 were used for vegetation classification using ENVI image processing software. Four different forest types were set as a classification criteria; evergreen broadleaf, evergreen conifer, deciduous broadleaf, and others. Unsupervised classification method was applied to classily forest types. Although it was impossible to draw exact forest types in rocky areas because of differences in data detection time and rough resolution of image, 2002 data revealed that total 2,027ha of evergreen broadleaf forests were growing in Wando. Evergreen broadleaves and evergreen conifers increased in total areas compared to 11 years ago, but there was sharp decrease in deciduous broadleaves. GIS-based management system for warm-temperate forest was done using Arc/Info. Geographic and attribute database of Wando such as vegetation, soils, topography, land owners were built with Arc/Info and ArcView. Graphic user interface which manages and queries necessary data was developed using Avenue.