• Proceedings of the Korea Water Resources Association Conference
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• 2015.05a
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• pp.281-281
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• 2015

Shallow landslide often occurs in areas of this topography where subsurface soil water flow paths give rise to excess pore-water pressures downslope. Recent hillslope hydrology studies have shown that subsurface topography has a strong impact in controlling the connectivity of saturated areas at the soil-bedrock interface. In this study, the physically based SHALSTAB model was used to evaluate the effects of three soil thicknesses (i.e. average soil layer, soil thickness to weathered soil and soil thickness to bedrock soil layer) and subsurface flow reflecting three soil thicknesses on shallow landslide prediction accuracy. Three digital elevation models (DEMs; i.e. ground surface, weathered surface and bedrock surface) and three soil thicknesses (average soil thickness, soil thickness to weathered rock and soil thickness to bedrock) at a small hillslope site in Jinbu, Kangwon Prefecture, eastern part of the Korean Peninsula, were considered. Each prediction result simulated with the SHALSTAB model was evaluated by receiver operating characteristic (ROC) analysis for modelling accuracy. The results of the ROC analysis for shallow landslide prediction using the ground surface DEM (GSTO), the weathered surface DEM and the bedrock surface DEM (BSTO) indicated that the prediction accuracy was higher using flow accumulation by the BSTO and weathered soil thickness compared to results. These results imply that 1) the effect of subsurface flow by BSTO on shallow landslide prediction especially could be larger than the effects of topography by GSTO, and 2) the effect of weathered soil thickness could be larger than the effects of average soil thickness and bedrock soil thickness on shallow landslide prediction. Therefore, we suggest that using BSTO dem and weathered soil layer can improve the accuracy of shallow landslide prediction, which should contribute to more accurately predicting shallow landslides.

• Transactions on Electrical and Electronic Materials
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• v.2 no.3
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• pp.24-27
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• 2001

The end point of oxide chemical mechanical polishing (CMP) have determined by polishing time calculated from removal rate and target thickness of oxide. This study is about control of oxide removal amounts on the shallow trench isolation (STI) patterned wafers using removal rate and thickness of blanket (non-patterned) wafers. At first, it was investigated the removal properties of PETEOS blanket wafers, and then it was compared with the removal properties and the planarization (step height) as a function of polishing time of the specific STI patterned wafers. We found that there is a relationship between the oxide removal amounts of blanket and patterned wafers. We analyzed this relationship, and the post CMP thickness of patterned wafers could be controlled by removal rate and removal target thickness of blanket wafers. As the result of correlation analysis, we confirmed that there was the strong correlation between patterned and blanket wafer (correlation factor: 0.7109). So, we could confirm the repeatability as applying for STI CMP process from the obtained linear formula. As the result of repeatability test, the differences of calculated polishing time and actual polishing time was about 3.48 seconds. If this time is converted into the thickness, then it is from 104 $\AA$ to 167 $\AA$. It is possible to be ignored because process margin is about 1800 $\AA$.

• Journal of Environmental Science International
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• v.19 no.7
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• pp.871-877
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• 2010

The objectives of this study were to compare growth of Pllioblastus pygmaed and soil characteristics as affected by difference of soil thickness and mixture ratio in shallow-extensive green roof module system, and to identify the level of soil thickness and mixture as suitable growing condition to achieve the desired plants in green roof. Different soil thickness levels were achieved under 15cm and 25cm of shallow-extensive green roof module system that was made by woody materials for $500{\times}500{\times}300mm$. Soil mixture ratio were three types for perlit: peatmoss: leafmold=6:2:2(v/v/v, $P_6P_2L_2$), perlit: peatmoss: leafmold=5:3:2(v/v/v, $P_5P_3L_2$) and perlit: peatmoss: leafmold=4:4:2(v/v/v, $P_4P_4L_2$). On June 2006, Pllioblastus pygmaed were planted directly in a green roof module system in rows. All treatment were arranged in a randomized complete block design with three replication. The results are summarized below. In term of soil characteristics, Soil acidity and electric conductivity was measured in pH 6.0~6.6 and 0.12dS/m~0.19dS/m, respectively. Organic matter and exchangeable cations desorption fell in the order: $P_4P_4L_2$ > $P_5P_3L_2$ > $P_6P_2L_2$. $P_6P_2L_2$ had higher levels of the total solid phase and liquid phase, and $P_4P_4L_2$ had gas phase for three phases of soil in the 15cm and 25cm soil thickness. Although Pllioblastus pygmaed was possibled soil thickness 15cm, there was a trend towards increased soil thickness with increased leaf length, number of leaves and chlorophyll contents in 25cm. The growth response of Pllioblastus pygmaed had fine and sustain condition in order to $P_6P_2L_2$ = $P_5P_3L_2$ > $P_4P_4L_2$. However, The results of this study suggested that plants grown under $P_4P_4L_2$ appear a higher density ground covering than plants grown under $P_6P_2L_2$. Collectively, our data emphasize that soil thickness for growth of Pllioblastus pygmaed were greater than soil mixture ratio in shallow-extensive green roof module system.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.13 no.4
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• pp.10-17
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• 2010

The objectives of this study were to compare the growth of Vitex rotundifolia as affected by the difference of soil depth and mixture ratio in a shallow-extensive green roof module system, and to identify the level of soil thickness and mixture ratio as suitable growing condition to achieve the desired plant growth in green roof. Different soil thickness levels were achieved under 7cm, 15cm and 25cm of shallow-extensive green roof module systems made by woody frame of $500{\times}500{\times}300mm$. Soil mixture ratio were eight types for perlite : peatmoss : leafmold = 7 : 1 : 2 (v/v/v, $P_7P_1L_2$), perlite : peatmoss : leafmold = 6 : 2 : 2 (v/v/v, $P_6P_2L_2$), perlite : peatmoss : leafmold = 5 : 3 : 2 (v/v/v, $P_5P_3L_2$), perlite : peatmoss : leafmold = 4 : 4 : 2 (v/v/v, $P_4P_4L_2$), only sand ($S_{10}$), sand : leafmold = 7 : 3 (v/v, $S_7L_3$), sand : leafmold = 5 : 5 (v/v, $S_5L_5$) and only leafmold ($L_{10}$). The growth response of Vitex rotundifolia had fine and sustain condition in $P_6P_2L_2$, $P_5P_3L_2$ and $P_4P_4L_2$., Especially, in case of $P_6P_2L_2$, growth response appeared to be good even in soil thickness 7cm, which showed low survival rates of Vitex rotundifolia in other soil mixtures. Tree height, root diameter, photosynthesis and chlorophyll contents tended to increase with increased soil thickness.

• Structural Engineering and Mechanics
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• v.55 no.1
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• pp.29-46
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• 2015

A three-dimensional (3-D) method of analysis is presented for determining the natural frequencies of a truncated shallow and deep conical shell with linearly varying thickness along the meridional direction free at its top edge and clamped at its bottom edge. Unlike conventional shell theories, which are mathematically two-dimensional (2-D), the present method is based upon the 3-D dynamic equations of elasticity. Displacement components $u_r$, $u_{\theta}$, and $u_z$ in the radial, circumferential, and axial directions, respectively, are taken to be periodic in ${\theta}$ and in time, and algebraic polynomials in the r and z directions. Strain and kinetic energies of the truncated conical shell with variable thickness are formulated, and the Ritz method is used to solve the eigenvalue problem, thus yielding upper bound values of the frequencies by minimizing the frequencies. As the degree of the polynomials is increased, frequencies converge to the exact values. Convergence to four-digit exactitude is demonstrated. The frequencies from the present 3-D method are compared with those from other 3-D finite element method and 2-D shell theories.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.9
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• pp.438-443
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• 2001

In the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control, within-wafer-non-uniformity, and the possible defects such as pad oxide damage and nitride residue. The defect like nitride residue and silicon (or pad oxide) damage after STI-CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI fill and STI-CMP were discussed. Consequently, we could conclude that law trench depth and high CMP thickness can cause nitride residue, and high trench depth and over-polishing can cause silicon damage.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.5-9
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• 2002

Chemical mechanical polishing (CMP) has become the preferred planarization method for multilevel interconnect technology due to its ability to achieve a high degree of feature level planarity. Especially, to achieve the higher density and greater performance, shallow trench isolation (STI)-CMP process has been attracted attention for multilevel interconnection as an essential isolation technology. Also, it was possible to apply the direct STI-CMP process without reverse moat etch step using high selectivity slurry (HSS). In this work, we determined the process margin with optimized process conditions to apply HSS STI-CMP process. Then, we evaluated the reliability and reproducibility of STI-CMP process through the optimal process conditions. The wafer-to-wafer thickness variation and day-by-day reproducibility of STI-CMP process after repeatable tests were investigated. Our experimental results show, quite acceptable and reproducible CMP results with a wafer-to-wafer thickness variation within 400$\AA$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.501-504
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• 1999

In the shallow trench isolation(STI) chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control within- wafer-non-uniformity, and the possible defects such as nitride residue and pad oxide damage. These defects after STI CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI filling and STI CMP were discussed. It is represented that the nitride residue can be occurred in the condition of high post CMP thickness and low trench depth. In addition there are remaining oxide on the moat surface after reverse moat etch. It means that reverse moat etching process can be the main source of nitride residue. Pad oxide damage can be caused by over-polishing and high trench depth.

• The Journal of the Acoustical Society of Korea
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• v.6 no.4
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• pp.64-73
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• 1987

Low frequency sound propagation in a range-dependent shallow water environment of the Korea Strait has been studied by using the adiabatic coupled mode, ADIAB. The range-dependent environment is unique in terms of horizontal variations of sound velocity profiles, sediment thickness and attenuation coefficients and water depths. For shallow source and receiver depths, the most important mechanism involved in the propagation loss is the depth changing character of mode functions that strongly depends on the local sound velocity profile. Application of the adiabatic coupled mode theory to shallow water environment is reasonable when higher modes are attenuated due to bottom interaction effects. Underwater sound propagation in a range-dependent shallow-water environment.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.87-92
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• 1998

Ultr shallow p$^{+}$-n junction with Co/Ti bilayer silicidde contact was formed by ion implantation of BF$_{2}$ [energy : (30, 50)keV, dose:($5{\times}10^{14}$, $5{\times}10^{15}$/$\textrm{cm}^2$] onto the n-well Si(100) region and by RTA-silicidation and post annealing of the evaporated Co(120.angs., 170.angs.)/Ti(40~50.angs.) double layer. The sheet resistance of the silicided p$^{+}$ region of the p$^{+}$-n junction formed by BF2 implantation with energy of 30keV and dose of $5{\times}10^{15}$/$\textrm{cm}^2$ and Co/Ti thickness of $120{\AA}$/(40~$50{\AA}$) was about $8{\Omega}$/${\box}$. The junction depth including silicide thickness of about $500{\AA}$ was 0.14${\mu}$. The fabricated p$^{+}$ -n ultra shallow junction depth including silicide thickness of about $500{\AA}$ was 0.14${\mu}$. The fabricated p$^{+}$-n ultra shallow junction with Co/Ti bilayer silicide contact did not show any agglomeration or variation of sheet resistance value after post annealing at $850^{\circ}C$ for 30 minutes. The boron concentration at the epitaxial CoSi$_{2}$/Si interface of the fabricated junction was about 6*10$6{\times}10^{19}$ / $\textrm{cm}^2$./TEX>.