• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.415.1-415.1
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• 2016

2009년도에 Perovskite가 태양전지에 처음 적용된 이후, Perovskite를 기반으로 하는 태양전지는 급속한 발전을 이루고 있으나, 향후 상용화를 위해서는 추가적인 공정개선 및 제조 단가를 낮추는 노력이 필수적이다. 초창기 Perovskite의 증착 공정은 One step deposition 방법이 사용되었으나, Layer의 thickness, uniformity 등을 조절하기 어려워 Sequential deposition 방법으로 개선되었다. 하지만 결과적으로 초기방법 대비 추가공정이 발생함에 따라 시간 및 비용의 증가가 불가피하였다. 제조단가 측면에서는 Perovskite 태양전지를 구성하는 재료 중 HTM(정공수송물질)을 구성하는 Spiro-MeOTAD의 비용이 가장 비싸다. 따라서 저비용 태양전지를 위해서는 HTM이 없는 구조가 필요하다. 이 페이퍼에서는 Perovskite 물질이 고흡광 능력 외에 충분한 전하수송능력을 보유한다는 점에 착안하여, Gas Pressure Assisted Modified One Step Deposition을 이용한 HTM Free Perovskite를 제작하고 기존의 Sequential Deposition Method 통해 만들어진 Perovskite 태양전지와 비교/분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.419-419
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• 2012

We fabricated the Polyamide 4,6 (PA46) thin film using Adipoyl chloride and 1,4-butadiamine. PA46 film was grown at $70^{\circ}C$ by Molecular Layer Deposition (MLD) method. MLD is sequential and self-terminating fabrication method for organic thin film. The growth rate of PA46 is $3.5{\acute{\AA}}$ cycle. The thickness of PA46 film was measured by Ellipsometer. Surface morphology of this film was investigated by Atomic Force Microscopy (AFM) and roughness is directly proportional to number of growing cycles.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.56-56
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• 2010

We report a low-temperature fabrication of organic/inorganic nanohybrid dielectrics for organic thin film transistors. The self-assembled organic layers (SAOLs) were grown by repeated sequential adsorptions of C=C-terminated alkylsilane and metal (Al or Ti) hydroxyl with ozone activation, which was called "molecular layer deposition (MLD)". The $TiO_2$ and $Al_2O_3$ inorganic layers were grown by ALD, which relies on sequential saturated surface reactions resulting in the formation of a monolayer in each sequence and is a potentially powerful method for preparing high quality multicomponent superlattices. The MLD method combined with ALD (MLD-ALD) was applied to fabricate SAOLs-$Al_2O_3$-SAOLs-$TiO_2$ nanohybrid superlattices on polymer substrates at relatively low temperature. The MLD method is an ideal fabrication technique for various flexible electronic devices.

• Environmental Engineering Research
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• v.21 no.1
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• pp.45-51
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• 2016

Membrane bioreactor (MBR) and reverse osmosis (RO) membrane system was applied to the treatment and reclamation of textile wastewater in Thailand. An experiment was carried out to determine the fouling behavior and effect of anti-scalant and biocide addition to flux decline and its recovery through chemical cleaning. The RO unit was operated for one month after which the fouled membranes were cleaned by sequential chemical cleaning method. RO flux was found rapidly declined during initial period and only slightly decreased further in long-term operation. The main foulants were organic compounds and thus sequential cleaning using alkaline solution followed by acid solution was found to be the most effective method. The provision of anti-scalant and biocide in feed-water could not prevent deposition of foulant on the membrane surface but helped improving the membrane cleaning efficiencies.

• Nuclear Engineering and Technology
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• v.53 no.11
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• pp.3764-3771
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• 2021

Based on the convolutional neural network (CNN), a novel technique is investigated for lost gamma source detection in a room. The CNN is trained with the result of a GEANT4 simulation containing a gamma source inside a meshed room. The dataset for the training process is the deposited energy in the meshes of different n-step paths. The neural network is optimized with parameters such as the number of input data and path length. Based on the proposed method, the place of the gamma source can be recognized with reasonable accuracy without human intervention. The results show that only by 5 measurements of the energy deposited in a 5-step path, (5 sequential points 50 cm apart within 1600 meshes), the gamma source location can be estimated with 94% accuracy. Also, the method is tested for the room geometry containing the interior walls. The results show 90% accuracy with the energy deposition measurement in the meshes of a 5-step path.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.162-168
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• 2006

To fabricate nanometer scale InGaAs HEMTs, we have successfully developed various novel nano-patterning techniques, including sidewall-gate process and e-beam resist flowing method. The sidewall-gate process was developed to lessen the final line length, by means of the sequential procedure of dielectric re-deposition and etch-back. The e-beam resist flowing was effective to obtain fine line length, simply by applying thermal excitation to the semiconductor so that the achievable final line could be reduced by the dimension of the laterally migrated e-beam resist profile. Applying these methods to the device fabrication, we were able to succeed in making 30nm $In_{0.7}Ga_{0.3}As$ HEMTs with excellent $f_T$ of 426GHz. Based on nanometer scale InGaAs HEMT technology, several high performance millimeter-wave integrated circuits have been successfully fabricated, including 77GHz MMIC chipsets for automotive radar application.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3451-3455
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• 2013

Single-crystalline silicon nanowires (SiNWs) were fabricated by using an electroless metal-assisted etching of bulk silicon wafers with silver nanoparticles obtained by wet electroless deposition. The etching of SiNWs is based on sequential treatment in aqueous solutions of silver nitrate followed by hydrofluoric acid and hydrogen peroxide. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the Si substrate were produced. Free-standing SiNWs were then obtained using ultrasono-method in toluene. Alkyl-derivatized SiNWs were prepared to prevent the aggregation of SiNWs and obtained from the reaction of SiNWs and dodecene via hydrosilylation. Optical characterizations of SiNWs were achieved by FT-IR spectroscopy and indicated that the surface of SiNWs is terminated with hydrogen for fresh SiNWs and with dodecyl group for dodecyl-derivatized SiNWs, respectively. The main structures of dodecyl-derivatized SiNWs are wires and rods and their thicknesses of rods and wire are typically 150-250 and 10-20 nm, respectively. The morphology and chemical state of dodecyl-derivatized SiNWs are characterized by scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy.

• Geomechanics and Engineering
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• v.29 no.4
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• pp.391-405
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• 2022

A newly proposed grouting simulation method, the sequential diffusion solidification method was introduced into the numerical simulation of combined bi-borehole grouting. The traditional, critical and difficult numerical problem for the temporal and spatial variation simulation of the slurry is solved. Thus, numerical simulation of grouting and blocking of flowing water in karst conduits is realized and the mechanism understanding of the combined bi-borehole technology is promoted. The sensitivity analysis of the influence factors of combined bi-borehole grouting was investigated. Through orthogonal experiment, the influences of proximal and distal slurry properties, the initial flow velocity of the conduit and the proximal and distal slurry injection rate on the blocking efficiency are compared. The velocity variation, pressure variation and slurry deposition phenomenon were monitored, and the flow field characteristics and slurry outflow behavior were analyzed. The interaction mechanism between the proximal and distal slurries in the combined bi-borehole grouting is revealed. The results show that, under the orthogonal experiment conditions, the slurry injection rate has the greatest impact on blocking. With a constant slurry injection rate, the blocking efficiency can be increased by more than 30% when using slurry with weak time-dependent viscosity behavior in the distal borehole and slurry with strong time-dependent viscosity behavior in the proximal borehole respectively. According to the results of numerical simulation, the grouting scheme of "intercept the flow from the proximal borehole by quick-setting slurry, and grout cement slurry from the distal borehole" is put forward and successfully applied to the water inflow treatment project of China Resources Cement (Pingnan) Limestone Mine.

• Journal of the Korean Electrochemical Society
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• v.3 no.1
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• pp.44-48
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• 2000

Amorphous $V_2O_5$ cathode thin films were prepared by DC-magnetron sputtering at room temperature and the thin film rechargeable lithium batteries were fabricated with the configuration of $V_2O_5/LIPON/Li$ using sequential ex-situ thin film deposition techniques. The electrochemical characteristics of $V_2O_5$ cathode materials Prepared at 80/20 of $Ar/O_2$ ratio showed high capacity and cycling behaviors by half cell test. LIPON solid electrolytes films were prepared by RF-magnetron sputtering using the self-made $Li_3PO_4$ target in pure $N_2$ atmosphere, and it was very stable for lithium contact in the range of 1.2-4.0 V vs. Li. Metallic lithium were deposited on LIPON electrolyte by thermal evaporation methode in dry room. Vanadium oxide based full cell system showed the initial discharge capacity of $150{\mu}A/cm^2{\mu}m$ in the range of $1.2\~3.5V$.