• Journal of Sensor Science and Technology
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• v.10 no.3
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• pp.196-206
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• 2001

Real temperature profiles of a planar chromel-alumel mutli-junction thermal converter(TC 1) were measured by thermal image. Temperature profiles as a function of input power of thermal converters(TC 1${\sim}$TC 6) were simulated by 3-dimensional ANSYS program based on finite element method. Temperature difference between the hot junction and the cold junction for TC 1 was smallest and largest for TC 6 and correspondingly, he voltage response for TC 1 and TC 6 showed the smallest value of 3.09 mV/mW and the largest value of 4.03 mV/mW, respectively.

• Journal of IKEEE
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• v.8 no.1 s.14
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• pp.12-21
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• 2004

Error control is one of major concerns in many electronic systems. Experience shows that most malfunctions during system operation are caused by transient faults, which often mean abnormal signal delays that may result in violations of circuit element timing constraints. This paper presents a novel CMOS-based concurrent timing error detector that makes a flip-flop to sense and then signal whether its data has been potentially corrupted or not by a setup or hold timing violation. Designed circuit performs a quiescent supply current evaluation to determine timing violation from the input changes in relation to a clock edge. If the input is too close to the clock time, the resulting switching transient current in the detection circuit exceeds a reference threshold at the instant of the clock transition and an error is flagged. The circuit is designed with a $0.25{\mu}m$ standard CMOS technology at a 2.5 V supply voltage. The validity and effectiveness are verified through the HSPICE simulation. The simulation results in this paper shows that designed circuit can be used to detect setup and hold time violations effectively in clocked circuit element.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.613-617
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• 2001

The test items like as endurance, air leakage and oil endurance test is requested for reliability evaluation about O-ring which is a kind of core machinery accessories of semi-conduct manufacturing equipment. For verification of these, we design and manufactured a test system for endurance, air leakage and oil endurance of O-ring for semi-conduct manufacturing equipment, and also performed the test for two kinds of O-ring, as it were Viton and Kalretz. The characteristics of this test equipment consist in realization of the test conditions of semi-conduct manufacturing equipment and satisfying the test method. The test conditions are cut gas, vacuum grade, temperature and revolution numbers in the endurance test system, vacuum grade and temperature in the air leakage test system, temperature and time in the oil endurance test system. The separating test results for wearing which is an oil endurance test item, the wearing index of domestic produced Viton O-ring is higher than foreign product by 2%, wearing rate of Kalretz O-ring better than Viton O-ring by 17%, and particles existed in various place. The test result of air leakage which is measured through the RGA sensor used Helium, the vacuum grade was $10^-3$Torr. And the test result of oil endurance, the volume change rate was 7~15%. Hereafter, we intend to analysis the reliability test evaluation and to utilize for domestic manufacturing companies by establishing data base and developing reliability softwares.

• Journal of the Korean Ceramic Society
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• v.22 no.4
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• pp.54-60
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• 1985

Gas sensing materials for detecting flammable gases such as $CH_4$, $C_3H_8$ and n-$C_4H_{10}$ were developed by util-izing $In_2O_3$ as the principal sensing material. The sensing materials were formulated by mixing $In_2O_3$ powder with one or two other chemicals such as $SnO_2$, $Y_2O_3$ and $Al_2O_3$ with a small addition of $PdCl_2$ as a catalyst. Sample of sensor were fabricated by coating each of the mixtures on a ceramic tube impregnating ethylsili-cate and firing at 75$0^{\circ}C$ Each material mixture was evaluated by measuring and comparing gas sensitivity(resistance in air/resistance with gas) to flammable gases such as $CH_4$, $C_3H-8$ and n-$C_4H_{10}$. It was found that among fifteen compositions tested three compositions as follows show the highest gas sensitivity and thus are very feasible for commercialization as the gas sensors ; o49.5 $In_2O_3$+50 Al2O3_0.5 PdCl2(wt%) o $20In_2O_3+29$ $SnO_2+50$ $Al_2O_3+1$ $PdCl_2$(wt%) o40 $In_2O_3$+9 $Y_2O_3+50$ $Al_2O_3+1$ $PdCl_2$(wt%)

• Journal of the Korean Society of Marine Environment & Safety
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• v.14 no.1
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• pp.39-43
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• 2008

It is generally recognized that monitering of bio-molecules, which are related to the ocean environment, becomes more important. So far, for the detection of the bio-molecules, ocean samples were brought to laboratory to be analyzed using a complicate and expensive measuring system The "ship and dip" method takes a relatively long time to complete a analysis cycle and causes significant errors due to the time difference between the analysis processes. In order to overcome the drawbacks, developments of sensors for the detection of bio-molecules were suggested using nano-technology, such as nano-spintronic device, carbon nano tube device, and nano-semiconductors. The pros and cons of the technology were examined and reinvestigated to overcome the technical problems in the application to real sensors.

• Korean Journal of Optics and Photonics
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• v.28 no.2
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• pp.75-82
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• 2017

We present a new type of receiver-transmitter optical system that can be adapted to the sensor head of a displacement-measuring interferometer. The interferometer is utilized to control positioning error and repetition accuracy of a wafer, down to the order of 1 nm, in a semiconductor manufacturing process. Currently, according to the tendency of scale-up of wafers, an interferometer is demanded to measure a wider range of displacement. To solve this technical problem, we suggest a new type of receiver-transmitter optical system consisting of a GRIN lens-Collimating lens-Afocal lens system, compared to conventional receiver-transmitter using a single collimating lens. By adapting this new technological optical structure, we can improve coupling efficiency up to about 100 times that of a single conventional collimating lens.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

• Journal of Sensor Science and Technology
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• v.6 no.2
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• pp.115-122
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• 1997

In this paper, on-chp atomatic tuning circuit, using proposed integration level approximation technique, is designed to tuning of the variation of RC time-constant due to aging or temperature variation, etc. This circuit reduces the error, the difference between code values and real outputs of integrator, which is drawback of presented dual-slope tuning circuit and eliminates modulations of processing signals in integrated circuit due to fixed tuning codes during ordinary operation. This system is made up of simple integrator, A/D converter and digital control circuit and all capacitors are replaced by programed capacitor arrays in this system. This tuning circuit with 4 bit resolution achieves $-9.74{\sim}+9.68%$ of RC time constant error for 50% resistance variation.

• Journal of Sensor Science and Technology
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• v.20 no.3
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• pp.156-161
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• 2011

We fabricated a schottky barrier metal oxide semiconductor field effect transistor(SB-MOSFET) by applying indium-tin-oxide(ITO) to the source/drain on a highly resistive GaN layer grown on a silicon substrate. The MOSFET, with 10 ${\mu}M$ gate length and 100 ${\mu}M$ gate width, exhibits a threshold gate voltage of 2.7 V, and has a sub-threshold slope of 240 mV/dec taken from the $I_{DS}-V_{GS}$ characteristics at a low drain voltage of 0.05 V. The maximum drain current is 18 mA/mm and the maximum transconductance is 6 mS/mm at $V_{DS}$=3 V. We observed that the spectral photo-response characterization exhibits that the cutoff wavelength was 365 nm, and the UV/visible rejection ratio was about 130 at $V_{DS}$ = 5 V. The MOSFET-type UV detector using ITO, has a high UV photo-responsivity and so is highly applicable to the UV image sensors.

• Radiation Oncology Journal
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• v.2 no.1
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• pp.11-20
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• 1984

The renewed interest in the use of hyperthermia in cancer therapy is bases on radiobiological and clinical evidence indicated that there may be a significant therapeutic advantage with the use of heat alone or combined with radiation or chemotherapy, There are many methods for generating heat for localized tumor as like radiofrequency, microwave, electromagnetic induction and ultrasound. But it is very difficult to be even thermal dose distribution and stable output of power and then the detection of temperature in tumor is difficult to be precise with thermocouples and semiconductor sensors. We designed the microwave heating generator, dipole antenna applicators and autometic temperature controlled thermocouples for localized hyperthermia on skin and in cavities. 1. The microwave generator with 120 W, 2,450MHz magnetron could be heating up to $40^{\circ}C\~50^{\circ}C\;for\;1\~2$ hours in living tissues. 2. The thermal dose distribution in tissue with microwave was described $42^{\circ}C\~44^{\circ}C$ with in 3 cm depth and $2\~6cm$ diameter area. 3. Skin surface heating applicator with spiral 3 times wave length antenna radiated high Power of microwave. 4, Intracavitary heating applicator with dipole antenna with autometic control temperature sensor kept up continuously constant temperature in tissue. 5. For constant thermal distribution, applied two steps power with 10W microwave after $17\~20W$ during first 10 minutes. 6. The cooling rate by blood flew in living tissue was rised as $10\%$ then meats.