• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.188-196
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• 1998

The sensing and electrical characteristics of $WO_{3}$-based n-type semiconductor gas sensors are investigated. In normal air condition, $TiO_{2}$(4 wt. %)-doped $WO_{3}$-based sensor fabricated without any binder shows the grain boundary ( GB ) potential barrier height of 0.26 V. Sensors fabricated with alumina, PVA and silica sol binders show 0.17, 0.22 and 0.26 V of GB potential barrier height, respectively. In the ambience of 120 ppm $NO_{x}$ concentration, the GB potential barrier height of the sensor fablicated without binder is increased to 0.59 V. The sensors were fabricated with alumina, PVA, silica sol binders show 0.43, 0.66 and 0.52 V of potential barrier, respectively. Thus the variation of the potential barrier at GB is largest in the sensor fabricated with the PVA binder. This is found to be the main reason why the sensor fabricated with the PVA binder shows the best sensitivity. It is also found that the decrease of sensitivity at a temperature higher than the optimum operation temperature is due to the temperature dependence of the sensor resistance in normal air condition rather than the desorption of the adsorbed $NO_{x}$ gas particles. In the ambience of 250 ppm CO concentration, the GB potential barrier heights of the sensors fabricated without binder and with PVA binder are about 0.2 V showing negligible change compared to the case of normal air ambience. This fact indicates that these sensors are good candidates for the selective detection of $NO_{x}$ gas in the mixture of CO and $NO_{x}$ gases.

• Korean Journal of Optics and Photonics
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• v.17 no.3
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• pp.278-284
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• 2006

We have fabricated and measured electrooptic modulator using coupled stack InAs/InGaAs quantum dots. The height of the quantum dot is 16 nm and quantum dots are stacked including an InGaAs capping layer. The peak wavelength of photoluminescence is 1260 nm at room temperature and 1158 nm at 12 K. The operation characteristics of the quantum dots show high modulation efficiency of electrooptic modulator at 1550 nm compared to that of existing III-V bulk and MQW type semiconductor. The measured switching voltage ($V\pi$) is 540 and 600 mV, for TE mode and TM mode, respectively. From the results, the modulation efficiency can be determined as 333.3 and $300^{\circ}/V{\cdot}mm$ for TE and TM modes. The results reported here may lead to the design and fabrication of a novel electrooptic modulator with low switching voltage and high efficiency.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.3
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• pp.69-76
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• 2008

This work proposes a 12b 1kS/s 65uA 0.35um CMOS algorithmic ADC for sensor interface applications such as accelerometers and gyro sensors requiring high resolution, ultra-low power, and small size simultaneously. The proposed ADC is based on an algorithmic architecture with recycling techniques to optimize sampling rate, resolution, chip area, and power consumption. Two versions of ADCs are fabricated with a conventional open-loop sampling scheme and a closed-loop sampling scheme to investigate the effects of offset and 1/f noise during dynamic operation. Switched bias power-reduction techniques and bias circuit sharing reduce the power consumption of amplifiers in the SHA and MDAC. The current and voltage references are implemented on chip with optional of-chip voltage references for low-power SoC applications. The prototype ADC in a 0.35um 2P4M CMOS technology demonstrates a measured DNL and INL within 0.78LSB and 2.24LSB, and shows a maximum SNDR and SFDR of 60dB and 70dB in versionl, and 63dB and 75dB in version2 at 1kS/s. The versionl and version2 ADCs with an active die area of $0.78mm^2$ and $0.81mm^2$ consume 0.163mW and 0.176mW at 1kS/s and 2.5V, respectively.

• Journal of Biomedical Engineering Research
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• v.20 no.1
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• pp.81-90
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• 1999

This paper describes an EEG(electroencephalogram) software for two-channel cerebral function monitoring system to detect the cerebral ischemia. In the software, two-channel bipolar analog EEG signals are digitized and from the signals various EEG parameters are extracted and displayed on a monitor in real-time. Digitized EEG signal is transformed by FFT(Fast Fourier transform) and represented as CSA(compressed spectral array) and DSA(density spectral array). Additional 5 parameters, such as alpha ratio, percent delta, spectral edge frequency, total power, and difference in total power, are estimated using the FFT spectra. All of these are effectively merged in a monitor and displayed in real-time. Through animal experiments and clinical trials on men, the software is modified and enhanced. Since the software provides raw EEG, CSA, DSA, simultaneously with additional 5 parameters in a monitor, it is possible to observe patients multilaterally. For easy comparison of patient's status, reference patterns of CSA, DSA can be captured and displayed on top of the monitor. And user can mark events of surgical operation and patient's conditions on the software, this allow him jump to the points of events directly, when reviewing the recorded EEG file afterwards. Other functions, such as forward/backward jump, gain control, file management are equipped and these are operated by simple mouse click. Clinical tests in a university hospital show that the software responds accurately according to the conditions of patients and medical doctors can use the software easily.

• Korean Journal of Optics and Photonics
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• v.12 no.2
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• pp.135-142
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• 2001

Recently, plastic optical fiber draws a lot of attention as a new transmission medium for local area network (LAN) and home network applications. As PMMA based GI-POF (Graded Index Plastic Optical Fiber) has very low loss at about 500 nm and 650 nm wavelengths, it is very important to have a compact ultra short optical pulse source at these wavelength windows. In this paper, we have investigated detailed characteristics of gain switched laser system by using a commercially available low cost RF devices and an InGaAlP Fabry Perot semiconductor laser operating at 650 nm wavelength. The shortest optical 'pulse obtained was 33 psec with 1 GHz repetition rate. Depending on the DC bias current and the modulation frequency, the FWHM and the pulse energy of the gain switched pulses show 33.3-82.8 psec and 0.97-9.69 pI respectively. Also, the spectral bandwidths for CW and gain switched operations are 0.44 nm and 1.50 nm. We believe that these results are quite useful for high bit rate optical transmission applications with PMMA based plastic optical fibers in addition to estimate properties of ultra fast optical components and electro-optic devices. vices.

• Korean Journal of Optics and Photonics
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• v.14 no.6
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• pp.669-673
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• 2003

We fabricated a buried-ridge waveguide laser diode (B-RWG LD) which has more advantages for obtaining lateral single mode operation on the same ridge width and for the planarization of the device surface, compared to the conventional RWG LD. In this LD, the difference of the lateral effective refractive index can be controlled by the thickness of the InGaAsP layer which is grown on the active and the p-InP layers. The InGaAsP multiple quantum well was grown on a n-InP substrate by the CBE. The buried ridge structure was formed by selective wet etchings, followed by liquid phase epitaxy methods. The fabricated LD with the ridge width of 7 ${\mu}{\textrm}{m}$ showed a linear increase of the optical power up to 20 ㎽ without any kinks and a saturated output power of more than 80 ㎽. By measuring the far field pattern, we demonstrate that LDs with the ridge widths of 5 ${\mu}{\textrm}{m}$ and 7 ${\mu}{\textrm}{m}$ were operated in a lateral single mode up to 2.7I$_{th}$ and 2.4I$_{th}$, respectively.ely.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.6
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• pp.598-603
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• 2019

Three-dimensional shape measurement technology is used in various industries. Among them, optical three-dimensional shape measurement techniques based on the optical trigonometry are mainly used in the field of semiconductor product inspection, where large quantities of three-dimensional shape measurements are made daily in factories and fine measurements are also required. The light source and the drive circuit, which are components of three-dimensional measurement equipment based on this optical trigonometry, produce heat generated by prolonged operation, and may be exposed to conditions where the ambient temperature is not constant, resulting in temperature-induced measurement errors. In this study, the compensation method of the Thermal Errors for Phase Measuring Profilometry is proposed. Three-Dimensional Shape Measurement Equipment based on Phase Measuring Profilometry is implemented to measure the height of an object and ambient temperature for 10 Hours, and a regression line was obtained line by making simple linear regression using measured temperature and height values. This regression line was used to correct the error of the height measurement according to the temperature, and thermal error was from 139.88 um(Micrometer) to 13.12 um.

• Korean Chemical Engineering Research
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• v.60 no.2
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• pp.313-319
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• 2022

AlGaN/GaN based HfO₂ MOSHEMT (metal oxide semiconductor high electron transistor) with different gate recess depth was simulate to demonstrate a successful normally-off operation of the transistor. Three types of the HEMT structures including a conventional HEMT, a gate-recessed HEMT with 3 nm thick AlGaN layer, and MIS-HEMT without AlGaN layer in the gate region. The conventional HEMT showed a normally-on characteristics with a drain current of 0.35 A at V_G = 0 V and V_DS = 15 V. The recessed HEMT with 3 nm AlGaN layer exhibited a decreased drain current of 0.15 A under the same bias condition due to the decrease of electron concentration in 2DEG (2-dimensional electron gas) channel. For the last HEMT structure, distinctive normally- off behavior of the transistor was observed, and the turn-on voltage was shifted to 0 V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.3
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• pp.75-85
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• 2009

This work proposes a 13b 100MS/s 0.13um CMOS ADC for 3G communication systems such as two-carrier W-CDMA applications simultaneously requiring high resolution, low power, and small size at high speed. The proposed ADC employs a four-step pipeline architecture to optimize power consumption and chip area at the target resolution and sampling rate. Area-efficient high-speed high-resolution gate-bootstrapping circuits are implemented at the sampling switches of the input SHA to maintain signal linearity over the Nyquist rate even at a 1.0V supply operation. The cascode compensation technique on a low-impedance path implemented in the two-stage amplifiers of the SHA and MDAC simultaneously achieves the required operation speed and phase margin with more reduced power consumption than the Miller compensation technique. Low-glitch dynamic latches in sub-ranging flash ADCs reduce kickback-noise referred to the differential input stage of the comparator by isolating the input stage from output nodes to improve system accuracy. The proposed low-noise current and voltage references based on triple negative T.C. circuits are employed on chip with optional off-chip reference voltages. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates the measured DNL and INL within 0.70LSB and 1.79LSB, respectively. The ADC shows a maximum SNDR of 64.5dB and a maximum SFDR of 78.0dB at 100MS/s, respectively. The ABC with an active die area of $1.22mm^2$ consumes 42.0mW at 100MS/s and a 1.2V supply, corresponding to a FOM of 0.31pJ/conv-step.

• Korean Chemical Engineering Research
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• v.60 no.2
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• pp.249-254
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• 2022

With the rapid advance of the semiconductor and Information and communication technologies, remote environment monitoring technology, which can detect and analyze surrounding environmental conditions with various types of sensors and wireless communication technologies, is also drawing attention. However, since the conventional remote environmental monitoring systems require external power supplies, it causes time and space limitations on comfortable usage. In this study, we proposed the concept of the self-powered remote environmental monitoring system by supplying the power with the levitation-electromagnetic generator (L-EMG), which is rationally designed to effectively harvest biomechanical energy in consideration of the mechanical characteristics of biomechanical energy. In this regard, the proposed L-EMG is designed to effectively respond to the external vibration with the movable center magnet considering the mechanical characteristics of the biomechanical energy, such as relatively low-frequency and high amplitude of vibration. Hence the L-EMG based on the fragile force equilibrium can generate high-quality electrical energy to supply power. Additionally, the environmental detective sensor and wireless transmission module are composed of the micro control unit (MCU) to minimize the required power for electronic device operation by applying the sleep mode, resulting in the extension of operation time. Finally, in order to maximize user convenience, a mobile phone application was built to enable easy monitoring of the surrounding environment. Thus, the proposed concept not only verifies the possibility of establishing the self-powered remote environmental monitoring system using biomechanical energy but further suggests a design guideline.