Fabrication and characterization of InGaAsP/InP multi-quantum well buried-ridge waveguide laser diodes
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오수환
(한국전자통신연구원, 광통신소자 연구부)
이지면 (한국전자통신연구원, 광통신소자 연구부) 김기수 (한국전자통신연구원, 광통신소자 연구부) 이철욱 (한국전자통신연구원, 광통신소자 연구부) 고현성 (한국전자통신연구원, 광통신소자 연구부) 박상기 (한국전자통신연구원, 광통신소자 연구부) |
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Thermal degradation of InP and its control in LPE growth
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DOI ScienceOn |
2 |
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3 |
Progress in Chemical Beam Epitaxy
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DOI ScienceOn |
4 |
Determination of active-region leakage current in ridge-waveguide strained-layer quantum well lasers by variying the ridge width
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DOI ScienceOn |
5 |
Well Number, Length, and Temperature Dependence of Efficiency and Loss in InGaAsP-InP Compressively Strained MQW Ridge Waveguide Lasers at 1.3 ㎛
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DOI ScienceOn |
6 |
High performance InGaAsP/InP strained layer MQW lasers with reversed-mesa ridge waveguide structures
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DOI ScienceOn |
7 |
High-Power and Wide Temperature-Range Operation of InGaAsP-InP Strained MQW Lasers with Reverse-Mesa Ridge-Waveguide Structure
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DOI ScienceOn |
8 |
MQW Buried RWG LD 최적화 설계
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과학기술학회마을 |
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10 |
In-situ dry etching of InP using phosphorus trichloride and regrowth inside a chemical beam epitaxial growth chamber
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DOI ScienceOn |
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