• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.1-5
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• 2019

This study has been focused on properties of surface technology for large diameter upper electrode using in high density plasma process as like semi-conductor manufacturing process. The experimental studies have been carried out to get mirror surface for upper electrode. For a formation of high surface quality upper electrode, single crystal silicon upper electrode has been mechanical and chemical machining worked. Mechanical machining work of the upper electrode is carried out with varying mesh type using diamond wheel. In case of chemical machining work, upper electrode surface roughness was observed to be strongly dependent upon the etchant. The different surface roughness characteristics were observed according to etchant. The machining result of the surface roughness and surface morphology have been analyzed by use of surface roughness tester, laser microscope and ICP-MS.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.59-63
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• 2021

Upper electrode is one of core parts using plasma etching process at semiconductor. The purpose of this study is to analyze effects of cutting conditions for mechanical machining of silicon upper electrode. For this research, surface roughness of machined workpiece and depth of damage inside of silicon electrode are experimented and analyzed and different values of feed rate and depth of cut are applied for the experiments. From these experiments, it is verified that the surface roughness and internal damaged layer get worse according to take more fast feed rate. In conclusion, cutting condition is very important factor for machining. Results of this study can use to develop various parts which are made from single crystal silicon and affect various benefits to the semiconductor industry for better productivity.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.10
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• pp.1786-1791
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• 2016

The damage has occurred inside the semiconductor pattern When using conventional wet station for semiconductor. It was used for electrolytic ion water generator in order to prevent damage to the semiconductor pattern. It was designed and developed a flow path electrode and the mesh electrode to check the efficiency of the electrode. And It confirmed the expected results through the simulation of the flow path. and ORP were measured in accordance with the current and voltage of mesh electrode and flow paht electrodes. Flow path electrode 22A is 3V, up to pH 9.8, the value of ORP-558mV was measured and the mesh electrode was measured up to pH 9.8, ORP -350mV.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.46-50
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• 2018

The purpose of this study is to analyze effects of filtering system of cutting fluid which is used for machining silicon electrode. For the research, different sizes of filter clothes are applied to check grain size of sludge of cutting fluid. Surface roughness of machined workpiece, depth of damage inside of silicon electrode, and suspended solids of cutting fluid are experimented and analyzed. From these experiments, it is verified that filtering system of cutting fluid is very important factor for machining. Results of this study can affect various benefits to the semiconductor industry for better productivity and better atmospheric pollution in workplace.

• Journal of Semiconductor Engineering
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• v.1 no.3
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• pp.88-98
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• 2020

As biosensors are widely used in the medical field, flexible devices compatible with live animals have aroused great interest. Especially, significant research has been carried out to develop implantable or skin-attachable devices for real-time bio-signal sensing. From the device point of view, various biosensor types such as field-effect transistors (FETs) and multi-electrode arrays (MEAs) have been reported as diverse sensing strategies. In particular, the flexible FETs and MEAs allow semiconductor engineering to expand its application, which had been impossible with stiff devices and materials. This review summarizes the state-of-the-art research on flexible FET and MEA biosensors focusing on their materials, structures, sensing targets, and methods.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.270-271
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• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.2
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• pp.67-74
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• 1994

Effects of the GaAs semiconductor particles on electrophysical phenomena at the Pt electrode/10S0-3TM KCl aqueous electrolyte interfaces have been studied using voltammetric time based and electrochemical impedance techniques. The anodic decomposition effect f the GaAs semiconductor particles on electrophysical phenomena was significantly observed during the positive potential scan (0 to 1.0 V vs. SCE). On the other hand, the cathodic decomposition effect of the GaAs semiconductor particles was negligible during thenegative potential scan (0 to -1.0 V vs. SCE). The GaAs semiconductor particles act as current activators or mediators during the anodic process and act as charge screens during the cathodic process. The electrolyte resistance and related impedance was increased due to the presence of the GaAs semiconductor particles. The anodic decomposition effect of the GaAs semiconductor particles can directly be applied to activate the hydrogen evolution.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.67-72
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• 2023

In this paper, a dye-sensitized solar cell (DSSC), one of the representative third-generation solar cells with eco-friendly materials and processes compared to other solar cells, was modeled using MATLAB/Simulink. The simulation was conducted by designating values of series resistance, parallel resistance, light absorption coefficient, and thin film electrode thickness, which are directly related to the efficiency of dye-sensitized solar cells, as arbitrary experimental values. In order to analyze the performance of dye-sensitized solar cells, the optimal value among each parameter experimental value related to efficiency was found using formulas for fill factor (FF) and conversion efficiency.

• Journal of the Semiconductor & Display Technology
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• v.11 no.1
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• pp.41-47
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• 2012

In DSSC, fundamental process conditions of upper electrode were established and low cost-oriented method for TCO layer was proposed. Especially, prominent properties, that is, open-circuit voltage of 500mV or more and short-circuit current of $25mA/cm^2$ were yielded by 2-step sintering of semiconductive powder layer. High efficiency-DSSC was able to fabricate without high cost-semiconductor apparatus in common laboratory conditions.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.102-105
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• 2005

In this study Al electrode for OLED was deposited by FTS(Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell (LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar, Kr or mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr ). The film thickness and I-V curve of Al/cell were evaluated by $\alpha$-step and semiconductor parameter (HP4156A) measurement.