• Journal of Semiconductor Engineering
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• v.1 no.3
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• pp.88-98
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• 2020

As biosensors are widely used in the medical field, flexible devices compatible with live animals have aroused great interest. Especially, significant research has been carried out to develop implantable or skin-attachable devices for real-time bio-signal sensing. From the device point of view, various biosensor types such as field-effect transistors (FETs) and multi-electrode arrays (MEAs) have been reported as diverse sensing strategies. In particular, the flexible FETs and MEAs allow semiconductor engineering to expand its application, which had been impossible with stiff devices and materials. This review summarizes the state-of-the-art research on flexible FET and MEA biosensors focusing on their materials, structures, sensing targets, and methods.

• Journal of the Semiconductor & Display Technology
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• v.23 no.1
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• pp.48-51
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• 2024

Recently, high-performance BLDC(Brushless DC) motors are being applied to various fields such as industrial and personal mobility devices and drones. To achieve the best performance of BLDC, sensors such as hall sensors, encoders, and resolvers are used to determine the position of the rotor, and various speed control technologies are being developed. However, due to problems with high-speed control due to external environmental factors and frequency bandwidth of semiconductor sensing devices, research on BLDC motors without semiconductor sensing devices is in progress. Therefore, in this study, a signal brush was added to the end of the rotor of a BLDC motor and the rotor position of the BLDC motor was detected by analyzing the signal output through the signal brush.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.3
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• pp.365-373
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• 2015

We propose a simple and compact thyristor-based neuron circuit. The thyristor exhibits bi-stable characteristics that can mimic the action potential of the biological neuron, when it is switched between its OFF-state and ON-state with the help of assist circuit. In addition, a method of inter-neuron connection with synaptic devices is proposed, using double current mirror circuit. The circuit utilizes both short-term and long-term plasticity of the synaptic devices by flowing current through them and transferring it to the post-synaptic neuron. The double current mirror circuit is capable of shielding the pre-synaptic neuron from the post synaptic-neuron while transferring the signal through it, maintaining the synaptic conductance unaffected by the change in the input voltage of the post-synaptic neuron.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.59-63
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• 2023

Various devices have been emerging as a means of measuring indoor air quality, and among them, there are devices that support real-time remote monitoring through IoT technology and a cloud environment. To improve indoor air quality, based on the results determined by measuring devices, air purifiers or ventilation systems may need to be operated, and temperature and humidity control may be required. In this paper, we propose a design of indoor air quality measuring devices required for indoor air quality evaluation, and of the system needed to control relevant devices to improve indoor air quality through the interaction with the measuring devices. Currently, the servers for the interaction of indoor air quality devices and IoT devices are divided into conventional server type and serverless type, comparing the differences in response time of IoT devices to changes of indoor air quality.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.9
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• pp.1611-1614
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• 2010

The explosion of a nuclear weapon radiates a gamma-ray in the form of a transient pulse. If the gamma-ray introduces to semiconductor devices, much Electron-Hole Pairs(EHPs) are generated in depletion region of the devices[7]. as a consequence of that, high photocurrent is created and causes upset, latchup and burnout of semiconductor devices[8]. This phenomenon is known for Transient Radiation Effects on Electronics(TREE), also called dose-rate effects. In this paper 3D structure of inverter and NAND gate device was designed and transient pulse gamma-ray was modeled. So simulation for transient radiation effect on inverter and NAND gate was accomplished and mechanism for upset and latchup was analyzed.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.193-196
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• 1993

A procedure for preparing cross-sectional specimens for transmission electron microscopy(TEM)by focused ion beam(FIB)milling of specific regions of semiconductor devices is outlined. This technique enables TEM specimens to be pripared at precisely preselected area. In-situ #W thin film deposition on the top surface of desired site is complementally used to secure the TEM specimens to be less wedge shaped, which is main shortcoming of previous FIB-assisted TEM sample preparation technique. This technique is quite useful for the TEM sample priparation for fault finding and the characterization of fabrication process associated with submicron contact technologies.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.253.1-253.1
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• 2007

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.175-181
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• 2006

Wide band-gap semiconductor electron devices have made great progresses to produce very high power amplifiers for various wireless standards. The advantages of wide band-gap electronic devices and their progresses are summarized in this paper.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.197-197
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• 2006

• Advances in nano research
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• v.3 no.1
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• pp.1-11
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• 2015

Thin film ethanol sensors made from ${\alpha}-Fe_2O_3$ decorated with multiwall carbon nanotubes(MWCNTs) were manufactured by the electron beam deposition method. The morphology of the decorated ${\alpha}-Fe_2O_3$/MWCNTs (25:1 weight ratios) nanocomposite powder was investigated using the scanning electron microscopy and X-ray diffraction techniques. The thickness of thin films has been determined from ellipsometric measurements. The response of manufactured sensors was investigated at different temperatures of the sensor work body and concentration of gas vapors. Good response of prepared sensors to ethanol vapors already at work body temperature of $150^{\circ}C$ was shown.