• 제목/요약/키워드: Semiconductor devices

검색결과 1,719건 처리시간 0.035초

Flexible biosensors based on field-effect transistors and multi-electrode arrays: a review

  • Kim, Ju-Hwan;Park, Je-Won;Han, Dong-Jun;Park, Dong-Wook
    • Journal of Semiconductor Engineering
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    • 제1권3호
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    • pp.88-98
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    • 2020
  • As biosensors are widely used in the medical field, flexible devices compatible with live animals have aroused great interest. Especially, significant research has been carried out to develop implantable or skin-attachable devices for real-time bio-signal sensing. From the device point of view, various biosensor types such as field-effect transistors (FETs) and multi-electrode arrays (MEAs) have been reported as diverse sensing strategies. In particular, the flexible FETs and MEAs allow semiconductor engineering to expand its application, which had been impossible with stiff devices and materials. This review summarizes the state-of-the-art research on flexible FET and MEA biosensors focusing on their materials, structures, sensing targets, and methods.

Signal Brush를 적용한 BLDC(Brushless DC) 모터 위치 검출 (Study on BLDC (Brushless DC) Motor Position Detection by Adding Signal Brush)

  • 김영필;김시경
    • 반도체디스플레이기술학회지
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    • 제23권1호
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    • pp.48-51
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    • 2024
  • Recently, high-performance BLDC(Brushless DC) motors are being applied to various fields such as industrial and personal mobility devices and drones. To achieve the best performance of BLDC, sensors such as hall sensors, encoders, and resolvers are used to determine the position of the rotor, and various speed control technologies are being developed. However, due to problems with high-speed control due to external environmental factors and frequency bandwidth of semiconductor sensing devices, research on BLDC motors without semiconductor sensing devices is in progress. Therefore, in this study, a signal brush was added to the end of the rotor of a BLDC motor and the rotor position of the BLDC motor was detected by analyzing the signal output through the signal brush.

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Neuron Circuit Using a Thyristor and Inter-neuron Connection with Synaptic Devices

  • Ranjan, Rajeev;Kwon, Min-Woo;Park, Jungjin;Kim, Hyungjin;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권3호
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    • pp.365-373
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    • 2015
  • We propose a simple and compact thyristor-based neuron circuit. The thyristor exhibits bi-stable characteristics that can mimic the action potential of the biological neuron, when it is switched between its OFF-state and ON-state with the help of assist circuit. In addition, a method of inter-neuron connection with synaptic devices is proposed, using double current mirror circuit. The circuit utilizes both short-term and long-term plasticity of the synaptic devices by flowing current through them and transferring it to the post-synaptic neuron. The double current mirror circuit is capable of shielding the pre-synaptic neuron from the post synaptic-neuron while transferring the signal through it, maintaining the synaptic conductance unaffected by the change in the input voltage of the post-synaptic neuron.

실내공기질 개선 시스템의 서버 구성 방식에 따른 응답 시간의 차이 비교 (Comparison of the Difference in Response Time According to the Server Configuration Type of the Indoor Air Quality Improvement System)

  • 국중진
    • 반도체디스플레이기술학회지
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    • 제22권1호
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    • pp.59-63
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    • 2023
  • Various devices have been emerging as a means of measuring indoor air quality, and among them, there are devices that support real-time remote monitoring through IoT technology and a cloud environment. To improve indoor air quality, based on the results determined by measuring devices, air purifiers or ventilation systems may need to be operated, and temperature and humidity control may be required. In this paper, we propose a design of indoor air quality measuring devices required for indoor air quality evaluation, and of the system needed to control relevant devices to improve indoor air quality through the interaction with the measuring devices. Currently, the servers for the interaction of indoor air quality devices and IoT devices are divided into conventional server type and serverless type, comparing the differences in response time of IoT devices to changes of indoor air quality.

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반도체 소자의 과도펄스감마선 영향 모델링 및 시뮬레이션 (Modeling and Simulation for Transient Pulse Gamma-ray Effects on Semiconductor Devices)

  • 이남호;이승민
    • 전기학회논문지
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    • 제59권9호
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    • pp.1611-1614
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    • 2010
  • The explosion of a nuclear weapon radiates a gamma-ray in the form of a transient pulse. If the gamma-ray introduces to semiconductor devices, much Electron-Hole Pairs(EHPs) are generated in depletion region of the devices[7]. as a consequence of that, high photocurrent is created and causes upset, latchup and burnout of semiconductor devices[8]. This phenomenon is known for Transient Radiation Effects on Electronics(TREE), also called dose-rate effects. In this paper 3D structure of inverter and NAND gate device was designed and transient pulse gamma-ray was modeled. So simulation for transient radiation effect on inverter and NAND gate was accomplished and mechanism for upset and latchup was analyzed.

Cross-sectional TEM Specimens Priparation of Precisely Selected Regions of Semiconductor Devices using Focused Ion Beam Milling

  • 김정태;김호정;조윤성;최수한
    • 한국재료학회지
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    • 제3권2호
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    • pp.193-196
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    • 1993
  • A procedure for preparing cross-sectional specimens for transmission electron microscopy(TEM)by focused ion beam(FIB)milling of specific regions of semiconductor devices is outlined. This technique enables TEM specimens to be pripared at precisely preselected area. In-situ #W thin film deposition on the top surface of desired site is complementally used to secure the TEM specimens to be less wedge shaped, which is main shortcoming of previous FIB-assisted TEM sample preparation technique. This technique is quite useful for the TEM sample priparation for fault finding and the characterization of fabrication process associated with submicron contact technologies.

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Wide Band-gap FETs for High Power Amplifiers

  • Burm, Jin-Wook;Kim, Jae-Kwon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권3호
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    • pp.175-181
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    • 2006
  • Wide band-gap semiconductor electron devices have made great progresses to produce very high power amplifiers for various wireless standards. The advantages of wide band-gap electronic devices and their progresses are summarized in this paper.

The ethanol sensors made from α-Fe2O3 decorated with multiwall carbon nanotubes

  • Aroutiounian, Vladimir M.;Arakelyan, Valeri M.;Shahnazaryan, Gohar E.;Aleksanyan, Mikayel S.;Hernadi, Klara;Nemeth, Zoltan;Berki, Peter;Papa, Zsuzsanna;Toth, Zsolt;Forro, Laszlo
    • Advances in nano research
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    • 제3권1호
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    • pp.1-11
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    • 2015
  • Thin film ethanol sensors made from ${\alpha}-Fe_2O_3$ decorated with multiwall carbon nanotubes(MWCNTs) were manufactured by the electron beam deposition method. The morphology of the decorated ${\alpha}-Fe_2O_3$/MWCNTs (25:1 weight ratios) nanocomposite powder was investigated using the scanning electron microscopy and X-ray diffraction techniques. The thickness of thin films has been determined from ellipsometric measurements. The response of manufactured sensors was investigated at different temperatures of the sensor work body and concentration of gas vapors. Good response of prepared sensors to ethanol vapors already at work body temperature of $150^{\circ}C$ was shown.