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http://dx.doi.org/10.5370/KIEE.2010.59.9.1611

Modeling and Simulation for Transient Pulse Gamma-ray Effects on Semiconductor Devices  

Lee, Nam-Ho (한국원자력연구원 원자력융합 기술개발부)
Lee, Seung-Min (충남대학교 사범대학 전기전자통신공학교육과)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.59, no.9, 2010 , pp. 1611-1614 More about this Journal
Abstract
The explosion of a nuclear weapon radiates a gamma-ray in the form of a transient pulse. If the gamma-ray introduces to semiconductor devices, much Electron-Hole Pairs(EHPs) are generated in depletion region of the devices[7]. as a consequence of that, high photocurrent is created and causes upset, latchup and burnout of semiconductor devices[8]. This phenomenon is known for Transient Radiation Effects on Electronics(TREE), also called dose-rate effects. In this paper 3D structure of inverter and NAND gate device was designed and transient pulse gamma-ray was modeled. So simulation for transient radiation effect on inverter and NAND gate was accomplished and mechanism for upset and latchup was analyzed.
Keywords
Nuclear weapon; Transient radiation effect; Prompt gamma-ray; Logic gate device;
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Times Cited By KSCI : 1  (Citation Analysis)
Times Cited By SCOPUS : 0
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