• The Magazine of the IEIE
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• v.35 no.7
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• pp.57-71
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• 2008

The last decade has witnessed great improvements in power semiconductor devices thanks to the advanced design and process, which have made it possible to significantly improve the electrical performances of electronic systems while simultaneously reducing their site, weight and perhaps most importantly reducing their cost. Among the power semiconductor devices, IGBT will be a key semiconductor component for power industry since it has a huge potential to cover large areas of power electronics from small home appliances to heavy industries. Currently, only a few limited power semiconductor manufacturers supply most of the industrial consumptions of power IGBT and its modules. Therefore, a large portion of technology in the power industry is dependent on other advanced countries. In this regard, to independently build power IGBT devices and the relevant power module technology, Korean government initiated a new 5-year project 'Power IT,' which also aimed at booming the business of the power semiconductor and the allied industries. With the success of this power IT project, it is expected that the power semiconductor technology will be a basis to foster the high power semiconductor industry and moreover, there will be more innovative developments in the Korea region and globally Also, forming the channel between the customers and suppliers, it is possible to effectively develop the customized power products, which could strengthen the competitiveness of Korean power industry. Furthermore, the power industry including semiconductor manufacturers will be technologically self-supporting and be able to obtain good business opportunities, and eventually increase the share in the growing power semiconductor market, which could be positioned as a major industry in Korea.

• Journal of Power Electronics
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• v.15 no.5
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• pp.1380-1391
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• 2015

This paper provides a loss analysis and comparison of high power semiconductor devices in 5MW Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) Wind Turbine Systems (WTSs). High power semiconductor devices of the press-pack type IGCT, module type IGBT, press-pack type IGBT, and press-pack type IEGT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on the back-to-back type 3-level Neutral Point Clamped Voltage Source Converters (3L-NPC VSCs) supplied from a grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through a loss analysis considering both the conduction and switching losses under the operating conditions of 5MW PMSG wind turbines, particularly for application in offshore wind farms. This paper investigates the loss analysis and thermal performance of 5MW 3L-NPC wind power inverters under the operating conditions of various power factors. The loss analysis and thermal analysis are confirmed through PLECS Blockset simulations with Matlab Simulink. The comparison results show that the press-pack type IGCT has the highest efficiency including the snubber loss factor.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.12
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• pp.2001-2009
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• 1989

This study suggests the use of fuzzy model in the semiconductor devices modeling as a black box approach. When membership functions of fuzzy sets used in a fuzzy model are simple piecewise-linear functions, the fuzzy model can be reresented in a simple equation. To show that the fuzzy model can be very realistic and simple when used in semiconductor devices modeling, we construct fuzzy models for bipolar transistor, MOSFET and GaAs FET, and compare those with canonical piecewise-linear models.

• Korean Journal of Materials Research
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• v.19 no.5
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• pp.288-292
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• 2009

This article shows various factors that influence the thermal-cycling reliability of semiconductor devices utilizing the lead-on-chip (LOC) die attach technique. This work details how the modification of LOC package design as well as the back-grinding and dicing process of semiconductor wafers affect passivation reliability. This work shows that the design of an adhesion tape rather than a plastic package body can play a more important role in determining the passivation reliability. This is due to the fact that the thermal-expansion coefficient of the tape is larger than that of the plastic package body. Present tests also indicate that the ceramic fillers embedded in the plastic package body for mechanical strengthening are not helpful for the improvement of the passivation reliability. Even though the fillers can reduce the thermal-expansion of the plastic package body, microscopic examinations show that they can cause direct damage to the passivation layer. Furthermore, experimental results also illustrate that sawing-induced chipping resulting from the separation of a semiconductor wafer into individual devices might develop into passivation cracks during thermal-cycling. Thus, the proper design of the adhesion tape and the prevention of the sawing-induced chipping should be considered to enhance the passivation reliability in the semiconductor devices using the LOC die attach technique.

• Journal of Sensor Science and Technology
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• v.28 no.6
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• pp.360-365
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• 2019

A polyvinylidene fluoride (PVDF)-based film speaker is successfully fabricated with enhanced bass sound by incorporating buckled nanospring carbon nanotubes (NS-CNTs) as fillers. Various concentrations up to 1-7 wt% of uniformly dispersed buckled NS-CNTs are loaded to increase the beta (β)-phase fraction, crystallinity, and dielectric constant of the speaker, and this results in the bass part enhancement of about 19 dB full scale (dBFS) at 7 wt% filler loading of the piezoelectric film speaker.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.43-51
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• 2006

80-nm self-aligned n-and p-channel I-MOS devices were demonstrated by using a novel fabrication method featuring double sidewall spacer, elevated drain structure and RTA process. The fabricated devices showed a normal transistor operation with extremely small subthreshold swing less than 12.2 mV/dec at room temperature. The n- and p-channel I-MOS devices had an ON/OFF current of 394.1/0.3 ${\mu}A$ and 355.4/8.9 ${\mu}A$ per ${\mu}m$, respectively. We also investigated some critical issues in device design such as the junction depth of the source extension region and the substrate doping concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.357-360
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• 2003

In this paper, we designed 4.5kV/1.5kA IGCT devices. GCT thyristor has many superior characteristics compared with GTO thyristor, for examples; snubberless turn-off capability, short storage time, high turn-on capability, small turn-off gate charge and low total power loss of the application system containing device and peripheral parts such as anode reactor and snubber capacitance. In this paper we designed GCT thyristor devices, and analyzed static and dynamic characteristics of GCT thyristor depending on the minority carrier lifetime, n-base thickness and doping concentration of n-base region, respectively. Especially, turn-on and turn-off characteristics are very important characteristics for GCT thyristor devices. So, we considered above characteristic for design and analysis of GCT devices.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.1
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• pp.1-10
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• 2016

Nowadays, the importance of role of the international standardization keeps increasing substantially. We have already known that international standards have a huge impact on many companies, industries and nations. So far, it has been thought that standardizations are needed after the new products come into the market and are mass-produced in order to encourage the use of the products, systems and services. Standardization will make the products more safe, efficient, and environmentally friendly for the users. However, in these days, a paradigm of the standardization has been changed. International standard becomes a tool for dominating global market and is the most important ingredients of the competitiveness and economic progress of the nation and enterprises. Many countries like Japan, Germany and U.S. use the standardization as an effective method to dominate the market and monopolized the new technologies. Therefore, worldwide competition for the standardization of the new technology become fierce. Korea is leading the technology in semiconductor field. However, activities of international standardization are not sufficient. In order to boost the standardization activities in Korea from industry, academia, and research institute, this paper briefly introduce the international standard organization and some critical issues for next-generation semiconductor memory such as flexible semiconductor, automobile semiconductor and wearable devices.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.475-476
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• 2006

Recently, the demand for high density MOSFET arrays are increasing. In implementing 3-D devices to this end, it is inevitable to ion-implant vertically in order to avoid screening effects caused by high silicon fins. In this study, the dependency of drain current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak (PCP) and the doping gradient are varied to look into the effects on primary current characteristics. Through these analyses, criteria of ion-implantation for 3-D devices are established.

• Journal of the Semiconductor & Display Technology
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• v.3 no.4
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• pp.33-37
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• 2004

As the high speed and high integration of semiconductor devices and the generation of heat increases resulted in the effective heat dissipation influences on the performance and lifetime of semiconductor devices. The heat resistance or heat spread function of EMC(epoxy molding compound) which protects these devices became one of very important factors in the evaluation of semiconductor chips. Recently, silica, alumina, AlN(aluminum nitride) powders are widely used as the fillers of EMC. The filler loading in encapsulants was high up to about 80 vol%. A high loading of filler was improved low water absorption, low stress, high strength, better flowability and high thermal conductivity. In this study, the thermal properties were investigated through thermal, mechanical and microstructure. Thermophysical properties were investigated by laser flash and differential scanning calorimeter(DSC). For detailed inspection of materials, the samples were examined by SEM.