• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.1-7
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• 2006

AlN thin films have been fabricated by using RF magnetron sputtering method and their crystal orientations, microstructures and piezoelectric properties have been investigated with variation of the $Ar/N_2$ gas ratio and the substrate temperature. Particularly, when the $Ar/N_2$ gas ratio and the substrate temperature are 10/10 (sccm) and $400^{\circ}C$, respectively, the AlN thin film exhibits the highest (002) orientation. The result of the surface roughness measurement by using AFM shows that the surface roughness becomes better as the partial pressure of $N_2$ increases at the substrate temperature of $400^{\circ}C$ and it becomes the smallest value of 2.1 nm when $Ar/N_2$ is 0/20 (sccm). The AFM measurement also shows that when $Ar/N_2$ is 10/10 (sccm) shows that surface roughness becomes better as the substrate temperature increases from room temperature up to $300^{\circ}C$ and then it becomes worse as the substrate temperature goes up from $300^{\circ}C$. At the substrate temperature of $300^{\circ}C$ and $Ar/N_2$=10/10 (sccm), the surface roughness is 3.036 nm. The piezoelectric constant ($d_{33}$) of AlN thin film is measured by Pneumatic probe method. The measurement shows that the AlN thin film with the highest (002) orientation, fabricated at $Ar/N_2$=10/10 (sccm) and the substrate temperature of $400^{\circ}C$, has the best Piezoelectric constant ($d_{33}$) of 6.01 pC/N.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.75-82
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• 2019

Flexible solar cells have attracted enormous attention in recent years due to their wide applications such as portable batteries, wearable devices, robotics, drones, and airplanes. In particular, the demands of the flexible silicon and compound semiconductor solar cells with high efficiency and high reliability keep increasing. In this study, we fabricated a flexible InGaP/GaAs double-junction solar module. Then, the effects of the wind speed and ambient temperature on the operating temperature of the solar cell were analyzed with the numerical simulation. The temperature distributions of the solar modules were analyzed for three different wind speeds of 0 m/s, 2.5 m/s, and 5 m/s, and two different ambient temperature conditions of 25℃ and 33℃. The flexibility of the flexible solar module was also evaluated with the bending tests and numerical bending simulation. When the wind speed was 0 m/s at 25 ℃, the maximum temperature of the solar cell was reached to be 149.7℃. When the wind speed was increased to 2.5 m/s, the temperature of the solar cell was reduced to 66.2℃. In case of the wind speed of 5 m/s, the temperature of the solar cell dropped sharply to 48.3℃. Ambient temperature also influenced the operating temperature of the solar cell. When the ambient temperature increased to 33℃ at 2.5 m/s, the temperature of the solar cell slightly increased to 74.2℃ indicating that the most important parameter affecting the temperature of the solar cell was heat dissipation due to wind speed. Since the maximum temperatures of the solar cell are lower than the glass transition temperatures of the materials used, the chances of thermal deformation and degradation of the module will be very low. The flexible solar module can be bent to a bending radius of 7 mm showing relatively good bending capability. Neutral plane analysis was also indicated that the flexibility of the solar module can be further improved by locating the solar cell in the neutral plane.

• Journal of the Korean Society of Radiology
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• v.17 no.3
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• pp.433-440
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• 2023

High dose rate brachytherapy is a cancer treatment that intensively irradiates radiation to tumors by inserting isotopes with high dose rates into the body. For such a treatment, it is necessary to deliver an accurate dose to the tumor tissue through an accurate treatment plan while delivering only a minimum dose to the normal tissue. Therefore, it is very important to check the location accuracy of the source through accurate Quality Assurance (QA) in clinical practice. However, since the source position is determined using a ruler, automatic radiographer, video monitor, etc. in clinical practice, it yields inaccurate results. In this study, a semiconductor dosimeter using CsPbI₂Br and CsPbIBr₂ was fabricated. And, in order to analyze whether it is more suitable for the relative QA dosimeter for brachytherapy device among the two materials, the radiation detection ability of each was compared and evaluated. In order to evaluate the radiation detection ability in brachytherapy, the reproducibility and linearity of the two materials were evaluated in ¹⁹²IR. In the reproducibility evaluation, CsPbI₂Br presented a Relative Standard Deviatio(RSD) of 0.98% and CsPbIBr₂ presented an RSD of 3.45%. In the linearity evaluation, the coefficient of determination (R²) of CsPbI₂Br was presented as 0.9998, and the R² of CsPbIBr₂ was presented as 0.9994. As a result of the evaluation, it was found that CsPbI₂Br was more stable in radiation detection while satisfying the evaluation criteria in the dosimeter manufactured in this experiment. Therefore, CsPbI₂Br material is suitable for application as a relative dosimeter for radiation detection in brachytherapy devices.