Orientation, Surface Roughness and Piezoelectric Characteristics of AlN Thin Films with RF Magnetron Sputtering Conditions |
Bang Jung-Ho
(Dept. of Electronics Engineering, Inha University)
Chang Dong-Hoon (Dept. of Electronics Engineering, Inha University) Kang Seong-Jun (Dept. of Semiconductor Materials & Devices, Chonnam National University) Kim Dong-Guk (Piezolab) Yoon Yung-Sup (Dept. of Electronics Engineering, Inha University) |
1 | R. G. Gordon and U. Riaz, 'Chemical vapor deposition of aluminium nitride thin films', J. Mater. Res., Vol. 7, No.7, p. 1679, 1992 DOI |
2 | B. N. Hwang, C. S. Chen, H. Y. Lu, and T. C. Hsu, 'Growth mechanism of reactively sputtered aluminium nitride thin films', Mater. Sci. & Eng., Vol. A325, p. 380, 2002 DOI ScienceOn |
3 | T. Hsiosaki, K. Harada and A. Kawabata, 'Low- Temperature Growth of Piezoelectric AlN Film and its Optical and Acoustical Properties', Jpn J. Appl. Phys., Vol. 21, pp. 69-71, 1982 DOI |
4 | V. I. Dimitrova, D. I. Munova, and D. A. Dechev, 'Study of reactive DC magnetron sputtering deposition of AlN thin films', Vacuum, Vol. 49, No.3, p 193, 1998 DOI ScienceOn |
5 | Landolt-Bornstein, 'Numerical Data and Functional Relationships in Science and Technology', Group III, Vol. 11. Springer-Verlag, Berlin, 1979 |
6 | D. Y. Wang, Y. Nagahata, M. Masuda and Y. Hayashi, 'Effect of nonstoichiometry upon optical properties of radio frequency sputtered Al-N thin films formed at various sputtering pressures', J. Vac. Sci. Tedinol. A, Vol. 14, No. 6, pp.3092-3099, 1996 DOI ScienceOn |
7 | H. P. Lobi, M. Klee, R. Milsom, R. Dekker, C. Metzmacher, W. Brand, P. Lok, 'Materials for bulk acoustic wave (BAW) resonator and filters', J. Europ. Ceram Soc., Vol. 21, pp. 2633-2640, 200l DOI ScienceOn |
8 | A. Fathimulla, Amir A. Lakhani, 'Reactively rf magnetron sputtered AlN films as a gate dielectric', J. Appl. Phys., Vol. 54, No.8, August 1983 DOI ScienceOn |
9 | R. S. Naik, R. Rief, J. J. Lutsky, C. G. Sodini, J. Electro-Chem Soc., Vol. 146, p, 691, 1999 DOI ScienceOn |
10 | G. T. Park, J. J. Choi, J. Ryu, H Fan, H E. Kim 'Measurement of piezoelectric coefficients of lead zirconate titanate thin film by strain-monitoring pneumatic loading method', Appl. Phys. Lett, Vol. 80. pp. 4606-4608. 2002 DOI ScienceOn |
11 | C. R. Aita, R. J. Lad, and T. C. Tisane, 'The effect of RF power on sputtered zinc oxide', J. Appl. Phys., Vol. 51, No. 12, p 5405, 1980 |
12 | X. H. Xu, H. S. Wu, C. J. Zhang, Z. H. Jin, 'Morphological properties of AlN piezoelectric thin films deposited by DC reactive magnetron sputtering', Thin Solid Films, Vol. 388, pp. 62-67, 2001 DOI ScienceOn |
13 | D. G. Kim, 'Piezoelectric properties of lead zirconate titanate thin films characterized by the pneumatic loading method', Integrated Ferroelectrics, Vol. 24, pp. 107, 1999 DOI ScienceOn |
14 | F. hasegowa, T. Takahashi, K. Kubo, and Y. Nannichi, 'Plasma CVD of amorphous AlN from metalorganic Al source and properties of the deposited films', Jpn. J. Appl. Phys.,Vol. 26, No. 9, p. 1555, 1987 |