• Title/Summary/Keyword: Semiconductor detector

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Peripheral Dose Distributions of Clinical Photon Beams (광자선에 의한 민조사면 경계영역의 선량분포)

  • 김진기;김정수;권형철
    • Progress in Medical Physics
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    • v.12 no.1
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    • pp.71-77
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    • 2001
  • The region, near the edge of a radiation beam, where the dose changes rapidly according to the distance from the beam axis is known as the penumbra. There is a sharp dose gradient zone even in megavoltage photon beams due to source size, collimator, lead alloy block, other accessories, and internal scatter ray. We investigate dosimetric characteristics on penumbra regions of a standard collimator and compare to those of theoritical model for the optimal use of the system in radiotherapy. Peripheral dose distribution of 6 W Photon beams represents penumbral forming function as the depth. Also we have discussed that the peripheral dose distribution of clinical photon beams, differences between calculation dose use of emperical penumbral forming function and measurements in penumbral region. Predictions by emperical penumbral forming functions are compared with measurements in 3-dimensional water phantom and it is shown that the method is capable of reproduceing the measured peripheral dose values usually to within the statistical uncertainties of the data. The semiconductor detector and ion chamber were positioned at a dmax depth, 5cm depth, 10cm depth, and its specific ratio was determined using a scanning data. The effective penumbra, the distance from 80% to 20% isodose lines were analyzed as a function of the distance. The extent of penumbra will also expand with depth increase. Difference of measurement value and model functions value according to character of the detector show small error in dose distribution of the peripheral dose.

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Radiation detector material development with multi-layer by hetero-junction for the reduction of leakage current (헤테르접합을 이용한 누설전류 저감을 위한 다층구조의 방사선 검출 물질 개발)

  • Oh, Kyung-Min;Yoon, Min-Seok;Kim, Min-Woo;Cho, Sung-Ho;Nam, Sang-Hee;Park, Ji-Goon
    • Journal of the Korean Society of Radiology
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    • v.3 no.1
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    • pp.11-15
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    • 2009
  • In this study, the basic research verifying possibility of applications as radiology image sensor in Digital Radiography was performed, the radiology image sensor was fabricated using a multi-layer technique to decrease dark current. High efficiency materials in substitution for Amorphous Selenium(a-Se) have been studied as a direct method of imaging detector in Digital Radiography to decrease dark current by using PN junction or Hetero junction already used as solar cell, semiconductor. Particle-In -Binder method is used to fabricate radiology image sensor because it has a lot of advantages such as fabrication convenient, high yield, suitability for large area sensor. But high leakage current is one of main problem in Particle-In -Binder method. To make up for the weak points, multi-layer technique is used, and it is considered that high efficient digital radiation sensor can be fabricated with easy and convenient process. In this study, electrical properties such as leakage current, sensitivity, signal linearity is measured to evaluate multi-layer radiation sensor material.

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A Study on Characteristic of Glass Dosimeter According to Graded Change of Tube Current (유리선량계의 단계별 관전류량 변화에 따른 특성연구)

  • Son, Jin-Hyun;Kim, Seong-Ho;Mun, Hyun-Jun;Kim, Lyun-Kyun;Son, In-Hwa;Kim, Young-Jun;Min, Jung-Whan;Kim, Ki-Won
    • Journal of radiological science and technology
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    • v.37 no.2
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    • pp.135-141
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    • 2014
  • This study was evaluated the linearity and reproducibility according to dose, and reproducibility according to delay time by changing tube current amount (5 mAs, 10 mAs, 16 mAs, 20 mAs, 25 mAs, 32 mAs respectively, which are low energy radiations) using Glass Dosimeter (GD) and piranha semiconductor dosimeter which are used for measuring exposure dose. Measurements of radiation dose were performed using external detector of piranha 657 which is multi-function QA device (RTI Electronic, Sweden). Conditions of measurement were 80 kVp, SSD 100 cm and exposure region is $10cm{\times}10cm$. Glass dosimeter was exposed to radiation. Twenty-four glass dosimeters were divided into six groups (5 mAs, 10 mAs, 16 mAs, 20 mAs, 25 mAs, 32 mAs respectively), then measured. This study was resulted by measuring the linearity and reproducibility according to change of tube current in low energy field. In dose characteristic of GD, this study could be useful as previous study with regard to dose characteristic according to change of tube voltage in low energy field.

Characteristics of dose distribution for virtual wedge (가변형 쐐기필터의 선량분포에 관한 특성)

  • 김부길;김진기
    • Progress in Medical Physics
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    • v.12 no.2
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    • pp.125-131
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    • 2001
  • We was investigate the dosimetric characteristics of the virtual wedge and it compared to the conventional fixed wedge. Also we was evaluate the quality factor of the experimental multi-channel dosimetry system for virtual wedge. Recently virtual wedge technique and wedge fraction methods are available through the computer controlled asymmetric collimator or the independent jaw in medical linear accelerator for radiation therapy. The dosimetric characteristics are interpreted by radiation field analyzer RFA-7 system and PTW-UNIDOS system. Experimental multi-channel dosimetry system for virtual wedge was consists of the electrometer, the solid detector and array phantom. The solid detectors were constructed using commercially diodes for the assessment of quality assurance in radiotherapy. And it was used for the point dose measuring and field size scanning. The semiconductor detector and ion chamber were positioned at a dmax, 5 cm, 10 cm, 20 cm depth and its specific ratio was determined using a scanning data. Wedge angles in fixed and virtual type are compared with measurements in water phantom and it is shown that the wedge angle 15$^{\circ}$, 30$^{\circ}$, 45$^{\circ}$were agree within 1$^{\circ}$ degree in 6, 10 MV photon beams. In PDD and beam flatness, experimental multi-channel disimetry system was capable of reproduceing the measured values usually to within $\pm$2.1% the statistical uncertainties of the data. It was used to describe dosimetric characteristics of virtual wedge in clinical photon beams. Also we was evaluate optimal use of the virtual wedge and improve the quality factor of the experimental multi-channel dosimetry system for virtual wedge.

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Evaluation of Spatial Uniformity about Resolution and Sensitivity of a 'fixed focusing type SPECT' (고정식 초점형 SPECT에 있어, 선예도와 감도의 공간 균일성에 대한 평가)

  • Kim, Jaeil;Lim, Jeongjin;Cho, Seongwook;Noh, Kyeongwoon
    • The Korean Journal of Nuclear Medicine Technology
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    • v.23 no.1
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    • pp.54-58
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    • 2019
  • Purpose At now, there are many kind of dedicated heart SPECT machine in clinical nuclear medicine. Among those, the fixed focusing type SPECT can make a good quality, quantity image because a detectors of this SPECT arranged forward a special ROI and didn't rotate around of body. So, in this paper, we will evaluate a spatial uniformity about resolution and sensitivity at a same plane of a fixed focusing type SPECT. Materials and Methods We used D-SPECT as a fixed focusing type SPECT and Cario MD as a rotated parallel type SPECT to comparing each other. We injected $^{99m}Tc(14.8MBq/1cc)$ to 10 capillary tube (diameter=1mm), and we set those line sources a tfield of view of each SPECT. And then we acquired SPECT date, we applied are construction by recommended methods. By using two tomography images, we calculated a full width of half maximum as a resolution and total counts as a sensitivity, and we compared a CV (coefficientofvariation) values between two images as a spatial uniformity. Results In case of D-SPECT, a CV of resolution and sensitivity are 7.45%, 12.34%. In case of Cario MD, an CV of resolution and sensitivity are 12.49%, 21.84% Conclusion As a results, CV of resolution and sensitivity of a fixed focusing type SPECT is 67.75%, 77.00% higher than ones of a rotated parallel type SPECT. It means that a fixed focusing type SPECT is more uniformed, because this new SPECT can reduce a motion blur artifact by rotating detector around body, also all of detector that made by semiconductor arrange forward a special FOV like heart.

A Study on THz Generation and Detection Characteristics of InGaAs Semiconductor Epilayers (InGaAs 반도체 박막의 테라헤르쯔(THz) 발생 및 검출 특성 연구)

  • Park, D.W.;Kim, J.S.;Noh, S.K.;Ji, Young-Bin;Jeon, T.I.
    • Journal of the Korean Vacuum Society
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    • v.21 no.5
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    • pp.264-272
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    • 2012
  • In this paper, we report THz generation and detection characteristics investigated by InGaAs semiconductor epilayers, as results of a basic study obtained from the InGaAs-based THz transmitter/receiver (Tx/Rx). High-temperature and low-temperature (LT) grown InGaAs epilayers were prepared by the molecular beam epitaxy technique for the characterization of THz generation and detection, respectively, and the surface emission based on the photo-Dember effect was tried for THz generation. THz wave was generated by irradiation of a Ti:Sapphire fs pulse laser (60 ps/83 MHz), and a LT-GaAs Rx was used for the THz detection. The frequency band shown in the spectral amplitudes Fourier-transformed from the measured current signals was ranging in 0.5~2 THz, and the signal currents were exponentially increased with the Tx beam power. The THz detection characteristics of LT-InGaAs were investigated by using an Rx with dipole (5/20 ${\mu}m$) antenna, and the cutoff frequency was ~2 THz.

Development of hyperspectral image-based detection module for internal defect inspection of 3D-IC semiconductor module (3D-IC 반도체 모듈의 내부결함 검사를 위한 초분광 영상기반 검출모듈 개발)

  • Hong, Suk-Ju;Lee, Ah-Yeong;Kim, Ghiseok
    • Proceedings of the Korean Society for Agricultural Machinery Conference
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    • 2017.04a
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    • pp.146-146
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    • 2017
  • 현대의 스마트폰 및 태블릿pc등을 가능하게 만든 집적 기술 중의 하나는 3차원 집적 회로(3D-IC)와 같은 패키징 기술이다. 이러한 첨단 3차원 집적 기술은 메모리집적을 통한 대용량 메모리 모듈 개발뿐만 아니라, 메모리와 프로세서의 집적, high-end FPGA, Back side imaging (BSI) 센서 모듈, MEMS 센서와 ASIC 집적, High Bright (HB) LED 모듈 등에 적용되고 있다. 3D-IC의 3차원 모듈 제작 시에는 기존에 발생하지 않았던 여러 가지 파괴 모드들이 발생하고 있는데 Thermal/Photonic Emission 장비 등 기존의 2차원 결함분리 (Fault Isolation) 기술로는 첨단의 3차원 적층 제품들에서 발생하는 불량을 비파괴적으로 혹은 3차원적으로 분리하는 것이 불가능하므로, 비파괴 3차원 결함 분리 기술은 향후 선행 제품 적기 개발에 매우 필수적인 기술이다. 본 연구는 3D-IC 반도체의 비파괴적 내부결함 검사를 위하여 가시광선-근적외선 대역(351nm~1770nm)의 InGaAs (Indium Galium Arsenide) 계열 영상검출기 (imaging detector)를 사용하여 분광 시스템 광학 설계를 통한 초분광 영상 기반 검출 모듈을 제작하였다. 제작된 초분광 영상 기반 검출 모듈을 이용하여 구리 회로 위에 실리콘 웨이퍼가 3단 적층 된 반도체 더미 샘플의 초분광 영상을 촬영하였으며, 촬영된 초분광 영상에 대하여 Chemometrics model 기반의 분석기술을 적용하여 실리콘 웨이퍼 내부의 집적 구조에 대한 검사가 가능함을 확인하였다.

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Investigation of Radiation Effects on the Signal and Noise Characteristics in Digital Radiography (디지털 래디오그라피의 신호 및 잡음 특성에 대한 방사선 영향에 관한 연구)

  • Kim, Ho-Kyung;Cho, Min-Kook;Graeve, Thorsten
    • Journal of Biomedical Engineering Research
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    • v.28 no.6
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    • pp.756-767
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    • 2007
  • For the combination of phosphor screens having various thicknesses and a photodiode array manufactured by complementary metal-oxide-semiconductor (CMOS) process, we report the observation of image-quality degradation under the irradiation of 45-kVp spectrum x rays. The image quality was assessed in terms of dark pixel signal, dynamic range, modulation-transfer function (MTF), noise-power spectrum (NPS), and detective quantum efficiency (DQE). For the accumulation of the absorbed dose, the radiation-induced increase both in dark signal and noise resulted in the gradual reduction in dynamic range. While the MTF was only slightly affected by the total ionizing dose, the noise power in the case of $Min-R^{TM}$ screen, which is the thinnest one among the considered screens in this study, became larger as the total dose was increased. This is caused by incomplete correction of the dark current fixed-pattern noise. In addition, the increase tendency in NPS was independent of the spatial frequency. For the cascaded model analysis, the additional noise source is from direct absorption of x-ray photons. The change in NPS with respect to the total dose degrades the DQE. However, with carefully updated and applied correction, we can overcome the detrimental effects of increased dark current on NPS and DQE. This study gives an initial motivation that the periodic monitoring of the image-quality degradation is an important issue for the long-term and healthy use of digital x-ray imaging detectors.

Substrate Effects on the Response of PZT Infrared Detectors (상이한 기판조건에 따른 PZT 적외선 감지소자의 성능 변화)

  • Go, Jong-Su;Gwak, Byeong-Man;Liu, Weiguo;Zhu, Weiguang
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.3
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    • pp.428-435
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    • 2002
  • Pyroelectric $Pb(Zr_{0.3}Ti_{0.7})O_3$ (PZT30/70) thin film IR detectors has been fabricated and characterised. The PZT30/70 thin film was deposited onto $Pt/Ti/Si_3N_4/SiO_2/Si$ substrate by the sol-gel process. Four different substrate conditions were studied for their effects on the pyroelectric responses of the IR detectors. The substrate conditions were the combinations of the Si etching and the Pt/Ti patterning. In the Si etched substrate, the $Si_3N_4/SiO_2$ composite layer was used as silicon etch-stop, and was used as the membrane to support the PZT pyroelectric film element as well. The measured pyroelectric current and voltage responses of detectors fabricated on the micro-machined thin $Si_3N_4/SiO_2$ membrane were two orders higher than those of the detectors on the bulk-silicon. For detectors on the membrane substrate, the Pt/Ti patterned detectors showed a 2-times higher pyroelectric response than that of not-patterned detectors. On the other hand, the pyroelectric response of the detectors on the not-etched Si substrate was almost the same, regardless of the Pt/Ti patterning. It was also found that the rise time strongly depended on the substrate thickness: the thicker the substrate was, the longer the rise-time.

Characterization of CdS Thin Films for Compound Photovoltaic Applications by Atmospheres of Rapid Thermal Process (급속열처리 분위기에 따른 화합물 태양전지용 CdS 박막의 특성변화)

  • Park, Seung-Beum;Kwon, Soon-Il;Lee, Seok-Jin;Jung, Tae-Hwan;Yang, Kea-Joon;Lim, Dong-Gun;Park, Jae-Hwan;Song, Woo-Chang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.105-106
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    • 2008
  • Structural, optical and electrical properties of CdS films deposited by chemical bath deposition (CBD), which are a very attractive method for low-cost and large-area solar cells, are presented. Cadmium sulfide (CdS) is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS films have a great application potential such as solar cell, optical detector and optoelectronics device. In this paper, effects of Rapid Thermal Process (RTP) on the properties of CdS films were investigated. The CdS films were prepared on a glass by chemical bath deposition (CBD) and subsequently annealed at standard temperature $(400^{\circ}C)$ and treatment time (10 min) in various atmospheres (air, vacuum and $N_2$). The CdS films treated RTP in $N_2$ for to min were showed larger grain size and higher carrier density than the other samples.

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