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http://dx.doi.org/10.3795/KSME-A.2002.26.3.428

Substrate Effects on the Response of PZT Infrared Detectors  

Go, Jong-Su (Semiconductor Technology Research Center, Electronics and Telecommunications Research Institute)
Gwak, Byeong-Man (Dept. of Mechanical Engineering, Korea Advanced Institute of Science and Technology)
Liu, Weiguo (Electrical and Electronic Eng., singapore)
Zhu, Weiguang (Electrical and Electronic Eng., singapore)
Publication Information
Transactions of the Korean Society of Mechanical Engineers A / v.26, no.3, 2002 , pp. 428-435 More about this Journal
Abstract
Pyroelectric $Pb(Zr_{0.3}Ti_{0.7})O_3$ (PZT30/70) thin film IR detectors has been fabricated and characterised. The PZT30/70 thin film was deposited onto $Pt/Ti/Si_3N_4/SiO_2/Si$ substrate by the sol-gel process. Four different substrate conditions were studied for their effects on the pyroelectric responses of the IR detectors. The substrate conditions were the combinations of the Si etching and the Pt/Ti patterning. In the Si etched substrate, the $Si_3N_4/SiO_2$ composite layer was used as silicon etch-stop, and was used as the membrane to support the PZT pyroelectric film element as well. The measured pyroelectric current and voltage responses of detectors fabricated on the micro-machined thin $Si_3N_4/SiO_2$ membrane were two orders higher than those of the detectors on the bulk-silicon. For detectors on the membrane substrate, the Pt/Ti patterned detectors showed a 2-times higher pyroelectric response than that of not-patterned detectors. On the other hand, the pyroelectric response of the detectors on the not-etched Si substrate was almost the same, regardless of the Pt/Ti patterning. It was also found that the rise time strongly depended on the substrate thickness: the thicker the substrate was, the longer the rise-time.
Keywords
Infrared Detector; Sol-Gel Method; Pyroelectricity; Silicon Micromachining;
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Times Cited By KSCI : 1  (Citation Analysis)
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